Diodes GeneSiC Semiconductor Three Tower

Diodes - RF 0
Diodes - Rectifiers - Arrays 456
Diodes - Bridge Rectifiers 0
Diodes - Zener - Arrays 0
Diodes - Variable Capacitance (Varicaps, Varactors) 0

- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series

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List Table

Found: 456

MBRT120150

DIODE SCHOTTKY 150V 60A 3 TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 150V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 60A
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MBRT300200R

DIODE SCHOTTKY 200V 150A 3 TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 150A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 200V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 150A
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MURTA50040R

DIODE MODULE 400V 250A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 250A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 250A
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MBRT30040RL

DIODE SCHOTTKY 40V 150A 3 TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 3mA @ 40V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 150A
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MURTA30020R

DIODE GEN PURP 200V 150A 3 TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 150A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 25µA @ 200V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 150A
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MSRTA60060A

DIODE MODULE 600V 600A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 600A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 25µA @ 600V
- Operating Temperature - Junction: -40°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 600A (DC)
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MBRTA60020R

DIODE SCHOTTKY 20V 300A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 3mA @ 20V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 300A
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MBRTA60030R

DIODE SCHOTTKY 30V 300A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 30V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 300A
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MSRT200100AD

DIODE GEN 1KV 200A 3 TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 10µA @ 1000V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Series Connection
- Current - Average Rectified (Io) (per Diode): 200A
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MBRT30045RL

DIODE SCHOTTKY 45V 150A 3 TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 3mA @ 45V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 150A
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MBRT40035R

DIODE MODULE 35V 200A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 35V
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 200A
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MSRT250140A

DIODE MODULE 1.4KV 250A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 250A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 15µA @ 600V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 250A (DC)
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MSRTA600100A

DIODE MODULE 1KV 600A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: 3-SMD Module
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 600A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 25µA @ 600V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 600A (DC)
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MSRTA200120AD

DIODE GEN 1.2KV 200A 3 TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 10µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Series Connection
- Current - Average Rectified (Io) (per Diode): 200A
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MBRTA80045L

DIODE SCHOTTKY 45V 400A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 400A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 6mA @ 45V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 400A
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