Diodes GeneSiC Semiconductor Three Tower

Diodes - RF 0
Diodes - Rectifiers - Arrays 456
Diodes - Bridge Rectifiers 0
Diodes - Zener - Arrays 0
Diodes - Variable Capacitance (Varicaps, Varactors) 0

- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series

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List Table

Found: 456

MURT10040

DIODE ARRAY GP 400V 50A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Voltage - Forward (Vf) (Max) @ If: 1.35V @ 50A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 90ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 50A
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MSRT250120(A)

DIODE MODULE 1.2KV 250A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 250A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 15µA @ 600V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 250A (DC)
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MBRT30030

DIODE MODULE 30V 150A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 150A
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MURTA20020R

DIODE GEN PURP 200V 100A 3 TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 25µA @ 200V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 100A
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MSRTA30060AD

DIODE GEN PURP 600V 300A 3 TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 300A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 20µA @ 600V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Series Connection
- Current - Average Rectified (Io) (per Diode): 300A
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MURTA300120

DIODE GEN PURP 600V 150A 3 TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Voltage - Forward (Vf) (Max) @ If: 2.6V @ 150A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 25µA @ 600V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 150A
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MSRT100120AD

DIODE GEN 1.2KV 100A 3 TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 10µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Series Connection
- Current - Average Rectified (Io) (per Diode): 100A
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MURT20020R

DIODE MODULE 100A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 100A
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MSRT200120(A)

DIODE MODULE 1.2KV 200A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 200A (DC)
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MBRTA80040RL

DIODE SCHOTTKY 40V 400A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 400A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 5mA @ 40V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 400A
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MBRT60020RL

DIODE SCHOTTKY 20V 300A 3 TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 3mA @ 20V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 300A
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MURT10020R

DIODE ARRAY GP REV POLAR 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 200V
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 50A
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MURT10010R

DIODE MODULE 100V 50A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 50A
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MURT30060R

DIODE MODULE 600V 150A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 150A
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MBRTA80035RL

DIODE SCHOTTKY 35V 400A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 400A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 3mA @ 35V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 400A
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