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- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MURT10040 | DIODE ARRAY GP 400V 50A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.35V @ 50A | 400V | 90ns | -55°C ~ 150°C | 1 Pair Common Cathode | 50A |
| MSRT250120(A) | DIODE MODULE 1.2KV 250A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 15µA @ 600V | 1.2V @ 250A | 1200V | -55°C ~ 150°C | 1 Pair Common Cathode | 250A (DC) | |
| MBRT30030 | DIODE MODULE 30V 150A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 750mV @ 150A | 30V | -55°C ~ 150°C | 1 Pair Common Cathode | 150A | |
| MURTA20020R | DIODE GEN PURP 200V 100A 3 TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 200V | 1.3V @ 100A | 200V | -55°C ~ 150°C | 1 Pair Common Anode | 100A | |
| MSRTA30060AD | DIODE GEN PURP 600V 300A 3 TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 20µA @ 600V | 1.1V @ 300A | 600V | -55°C ~ 150°C | 1 Pair Series Connection | 300A | |
| MURTA300120 | DIODE GEN PURP 600V 150A 3 TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 600V | 2.6V @ 150A | 600V | -55°C ~ 150°C | 1 Pair Common Cathode | 150A | |
| MSRT100120AD | DIODE GEN 1.2KV 100A 3 TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 1200V | 1.1V @ 100A | 1200V | -55°C ~ 150°C | 1 Pair Series Connection | 100A | |
| MURT20020R | DIODE MODULE 100A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.3V @ 100A | 200V | 75ns | -55°C ~ 150°C | 1 Pair Common Anode | 100A |
| MSRT200120(A) | DIODE MODULE 1.2KV 200A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 600V | 1.2V @ 200A | 1200V | 1 Pair Common Cathode | 200A (DC) | ||
| MBRTA80040RL | DIODE SCHOTTKY 40V 400A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 40V | 600mV @ 400A | 40V | -55°C ~ 150°C | 1 Pair Common Anode | 400A | |
| MBRT60020RL | DIODE SCHOTTKY 20V 300A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 20V | 580mV @ 300A | 20V | -55°C ~ 150°C | 1 Pair Common Anode | 300A | |
| MURT10020R | DIODE ARRAY GP REV POLAR 3TOWER | GeneSiC Semiconductor | Three Tower | Standard, Reverse Polarity | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.3V @ 50A | 200V | 75ns | -55°C ~ 150°C | 1 Pair Common Anode | 50A |
| MURT10010R | DIODE MODULE 100V 50A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.3V @ 50A | 100V | 75ns | -55°C ~ 150°C | 1 Pair Common Anode | 50A |
| MURT30060R | DIODE MODULE 600V 150A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.7V @ 150A | 600V | 200ns | -55°C ~ 150°C | 1 Pair Common Anode | 150A |
| MBRTA80035RL | DIODE SCHOTTKY 35V 400A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 35V | 600mV @ 400A | 35V | -55°C ~ 150°C | 1 Pair Common Anode | 400A |
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