Diodes GeneSiC Semiconductor

Manufacturer
Diode Type
Supplier Device Package
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series

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List Table

Found: 2090

FR12D02

DIODE GEN PURP 200V 12A DO4

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 25µA @ 100V
- Operating Temperature - Junction: -65°C ~ 150°C
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MUR7020

DIODE GEN PURP 200V 70A DO5

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
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MBR7540R

DIODE SCHOTTKY REV 40V DO5

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 75A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 75A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 5mA @ 20V
- Operating Temperature - Junction: -65°C ~ 150°C
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FST12060

DIODE MODULE 60V 120A TO249AB

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: TO-249AB
- Supplier Device Package: TO-249AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 2mA @ 20V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 120A (DC)
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GE10MPS06E

650V 10A TO-252-2 SIC SCHOTTKY M

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Series: SiC Schottky MPS™
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 26A (DC)
- Speed: No Recovery Time > 500mA (Io)
- Capacitance @ Vr, F: 466pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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MURTA20040

DIODE GEN PURP 400V 100A 3 TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 25µA @ 400V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 100A
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S320Q

DIODE GEN PURP 1.2KV 320A DO205

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AB, DO-9, Stud
- Supplier Device Package: DO-205AB, DO-9
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 320A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Operating Temperature - Junction: -60°C ~ 180°C
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GBPC1510W

BRIDGE RECT 1P 1KV 15A GBPC-W

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 4-Square, GBPC-W
- Supplier Device Package: GBPC-W
- Diode Type: Single Phase
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Technology: Standard
- Voltage - Peak Reverse (Max): 1kV
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MBRT300200

DIODE SCHOTTKY 200V 150A 3 TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 150A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 200V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 150A
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MUR10020CT

DIODE MODULE 200V 50A 2TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 50A
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BR82

BRIDGE RECT 1PHASE 200V 8A BR-8

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 125°C (TJ)
- Package / Case: 4-Square, BR-8
- Supplier Device Package: BR-8
- Diode Type: Single Phase
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Technology: Standard
- Voltage - Peak Reverse (Max): 200V
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KBU6M

BRIDGE RECT 1PHASE 1KV 6A KBU

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 4-SIP, KBU
- Supplier Device Package: KBU
- Diode Type: Single Phase
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
- Current - Reverse Leakage @ Vr: 10µA @ 1000V
- Technology: Standard
- Voltage - Peak Reverse (Max): 1kV
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MBR20045CT

DIODE MODULE 45V 200A 2TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 5mA @ 20V
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 200A (DC)
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MSRTA50060(A)

DIODE MODULE 600V 500A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 25µA @ 600V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 500A (DC)
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S70YR

DIODE GEN PURP REV 1.6KV 70A DO5

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Operating Temperature - Junction: -65°C ~ 150°C
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Output by:

	Значение	Кол‑во
	5-SMD ⇒	8
	BR-10 ⇒	7
	BR-3 ⇒	7
	BR-6 ⇒	7
	BR-8 ⇒	7
	D61-3M ⇒	28
	D61-3SM ⇒	8
	D-67 ⇒	109
	DB ⇒	14
	DO-201 ⇒	1
	DO-203AB ⇒	2
	DO-203AB (DO-5) ⇒	6
	DO-205AA (DO-8) ⇒	59
	DO-205AB, DO-9 ⇒	42
	DO-214AA ⇒	3
	DO-4 ⇒	175
	DO-5 ⇒	294
	DO-9 ⇒	2
	GBL ⇒	7
	GBPC ⇒	28
	GBPC-T ⇒	3
	GBPC-W ⇒	28
	GBU ⇒	35
	KBJ ⇒	14
	KBL ⇒	14
	KBP ⇒	13
	KBPC ⇒	23
	KBPC-T ⇒	8
	KBPC-W ⇒	28
	KBPM ⇒	14
	KBU ⇒	21
	Module ⇒	5
	SMB (DO-214AA) ⇒	1
	SOT-227 ⇒	86
	Three Tower ⇒	456
	TO-220-2 ⇒	17
	TO-220FP ⇒	1
	TO-244 ⇒	32
	TO-244AB ⇒	128
	TO-247 ⇒	2

Supplier Device Package (40)