Semiconductors, Diodes GeneSiC Semiconductor DO-214AA
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- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
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- Manufacturer: GeneSiC Semiconductor
- Series: SiC Schottky MPS™
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 3300V
- Current - Average Rectified (Io): 300mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.2V @ 300mA
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 10µA @ 3300V
- Capacitance @ Vr, F: 42pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: GeneSiC Semiconductor
- Series: SiC Schottky MPS™
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Capacitance @ Vr, F: 131pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: GeneSiC Semiconductor
- Series: SiC Schottky MPS™
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 1A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2V @ 1A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 10µA @ 6.5V
- Capacitance @ Vr, F: 76pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100