-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GAP3SLT33-214 | DIODE SCHOTTKY 3.3KV 300MA DO214 | GeneSiC Semiconductor | DO-214AA, SMB | 300mA (DC) | Silicon Carbide Schottky | Surface Mount | DO-214AA | No Recovery Time > 500mA (Io) | 10µA @ 3300V | 42pF @ 1V, 1MHz | 2.2V @ 300mA | 3300V | 0ns | -55°C ~ 175°C | SiC Schottky MPS™ |
| GB02SLT12-214 | DIODE SCHOTTKY 1.2KV 2A DO214AA | GeneSiC Semiconductor | DO-214AA, SMB | 2A (DC) | Silicon Carbide Schottky | Surface Mount | DO-214AA | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 131pF @ 1V, 1MHz | 1.8V @ 1A | 1200V | 0ns | -55°C ~ 175°C | SiC Schottky MPS™ |
| GB01SLT06-214 | DIODE SCHOTTKY 650V 1A DO214AA | GeneSiC Semiconductor | DO-214AA, SMB | 1A (DC) | Silicon Carbide Schottky | Surface Mount | DO-214AA | No Recovery Time > 500mA (Io) | 10µA @ 6.5V | 76pF @ 1V, 1MHz | 2V @ 1A | 650V | 0ns | -55°C ~ 175°C | SiC Schottky MPS™ |
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