Semiconductors, Diodes GeneSiC Semiconductor TO-220FP

    • Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 1
  • GAP3SLT33-220FP
    DIODE SCHOTTKY 3.3KV 300MA TO220
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220FP
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 3300V
    • Current - Average Rectified (Io): 300mA
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 300mA
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 5µA @ 3300V
    • Capacitance @ Vr, F: 42pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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