Semiconductors, Diodes GeneSiC Semiconductor DO-4

    • Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 175
  • MBR3530
    DIODE SCHOTTKY 30V 35A DO4
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AA, DO-4, Stud
    • Supplier Device Package: DO-4
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 30V
    • Current - Average Rectified (Io): 35A
    • Voltage - Forward (Vf) (Max) @ If: 680mV @ 35A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1.5mA @ 20V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • FR6DR05
    DIODE GEN PURP REV 200V 16A DO4
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AA, DO-4, Stud
    • Supplier Device Package: DO-4
    • Diode Type: Standard, Reverse Polarity
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 16A
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 500ns
    • Current - Reverse Leakage @ Vr: 25µA @ 50V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • MBR3580R
    DIODE SCHOTTKY REV 80V DO4
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AA, DO-4, Stud
    • Supplier Device Package: DO-4
    • Diode Type: Schottky, Reverse Polarity
    • Voltage - DC Reverse (Vr) (Max): 80V
    • Current - Average Rectified (Io): 35A
    • Voltage - Forward (Vf) (Max) @ If: 840mV @ 35A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1.5mA @ 20V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • FR12BR02
    DIODE GEN PURP REV 100V 12A DO4
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AA, DO-4, Stud
    • Supplier Device Package: DO-4
    • Diode Type: Standard, Reverse Polarity
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 12A
    • Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 200ns
    • Current - Reverse Leakage @ Vr: 25µA @ 100V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • FR12D02
    DIODE GEN PURP 200V 12A DO4
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AA, DO-4, Stud
    • Supplier Device Package: DO-4
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 12A
    • Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 200ns
    • Current - Reverse Leakage @ Vr: 25µA @ 100V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • FR12J05
    DIODE GEN PURP 600V 12A DO4
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AA, DO-4, Stud
    • Supplier Device Package: DO-4
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 12A
    • Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 500ns
    • Current - Reverse Leakage @ Vr: 25µA @ 100V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • FR12B02
    DIODE GEN PURP 100V 12A DO4
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AA, DO-4, Stud
    • Supplier Device Package: DO-4
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 12A
    • Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 200ns
    • Current - Reverse Leakage @ Vr: 25µA @ 100V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • FR16G02
    DIODE GEN PURP 400V 16A DO4
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AA, DO-4, Stud
    • Supplier Device Package: DO-4
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 16A
    • Voltage - Forward (Vf) (Max) @ If: 900mV @ 16A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 200ns
    • Current - Reverse Leakage @ Vr: 25µA @ 100V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • FR16KR05
    DIODE GEN PURP REV 800V 16A DO4
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AA, DO-4, Stud
    • Supplier Device Package: DO-4
    • Diode Type: Standard, Reverse Polarity
    • Voltage - DC Reverse (Vr) (Max): 800V
    • Current - Average Rectified (Io): 16A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 16A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 500ns
    • Current - Reverse Leakage @ Vr: 25µA @ 100V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • FR6MR05
    DIODE GEN PURP REV 1KV 6A DO4
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AA, DO-4, Stud
    • Supplier Device Package: DO-4
    • Diode Type: Standard, Reverse Polarity
    • Voltage - DC Reverse (Vr) (Max): 1000V
    • Current - Average Rectified (Io): 6A
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 500ns
    • Current - Reverse Leakage @ Vr: 25µA @ 50V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • MBR35100R
    DIODE SCHOTTKY REV 100V DO4
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AA, DO-4, Stud
    • Supplier Device Package: DO-4
    • Diode Type: Schottky, Reverse Polarity
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 35A
    • Voltage - Forward (Vf) (Max) @ If: 840mV @ 35A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 1.5mA @ 20V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • MUR2510
    DIODE GEN PURP 100V 25A DO4
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AA, DO-4, Stud
    • Supplier Device Package: DO-4
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 25A
    • Voltage - Forward (Vf) (Max) @ If: 1V @ 25A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 75ns
    • Current - Reverse Leakage @ Vr: 10µA @ 50V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • S6GR
    DIODE GEN PURP REV 400V 6A DO4
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AA, DO-4, Stud
    • Supplier Device Package: DO-4
    • Diode Type: Standard, Reverse Polarity
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 6A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 10µA @ 100V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • FR6A02
    DIODE GEN PURP 50V 6A DO4
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AA, DO-4, Stud
    • Supplier Device Package: DO-4
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 50V
    • Current - Average Rectified (Io): 6A
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 200ns
    • Current - Reverse Leakage @ Vr: 25µA @ 50V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • S12MR
    DIODE GEN PURP REV 1KV 12A DO4
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis, Stud Mount
    • Package / Case: DO-203AA, DO-4, Stud
    • Supplier Device Package: DO-4
    • Diode Type: Standard, Reverse Polarity
    • Voltage - DC Reverse (Vr) (Max): 1000V
    • Current - Average Rectified (Io): 12A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 10µA @ 50V
    • Operating Temperature - Junction: -65°C ~ 175°C
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