- Manufacturer
- Diode Type
- Supplier Device Package
-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Technology
|
Operating Temperature
|
Speed
|
Current - Reverse Leakage @ Vr
|
Current - Max
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 150KR40A | DIODE GEN PURP 400V 150A DO205AA | GeneSiC Semiconductor | DO-205AA, DO-8, Stud | 150A | Standard, Reverse Polarity | Chassis, Stud Mount | DO-205AA (DO-8) | Standard Recovery >500ns, > 200mA (Io) | 35mA @ 400V | 1.33V @ 150A | 400V | -40°C ~ 200°C | |||||||||
| MBR30030CT | DIODE MODULE 30V 150A 2TOWER | GeneSiC Semiconductor | Twin Tower | Schottky | Chassis Mount | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 8mA @ 20V | 650mV @ 150A | 30V | -55°C ~ 150°C | 1 Pair Common Cathode | 150A | ||||||||
| GBU15M | BRIDGE RECT 1PHASE 1KV 15A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 1kV | 15A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1.1V @ 15A | |||||||||
| GKN71/12 | DIODE GEN PURP 1.2KV 95A DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 95A | Standard | Chassis, Stud Mount | DO-5 | Standard Recovery >500ns, > 200mA (Io) | 10mA @ 1200V | 1.5V @ 60A | 1200V | -40°C ~ 180°C | |||||||||
| 1N2130A | DIODE GEN PURP 150V 60A DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 60A | Standard | Chassis, Stud Mount | DO-5 | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 50V | 1.1V @ 60A | 150V | -65°C ~ 200°C | |||||||||
| MBRH15035L | DIODE SCHOTTKY 35V 150A D-67 | GeneSiC Semiconductor | D-67 | 150A | Schottky | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 35V | 600mV @ 150A | 35V | ||||||||||
| FST120200 | DIODE SCHOTTKY 200V 60A TO249AB | GeneSiC Semiconductor | TO-249AB | Schottky | Chassis Mount | TO-249AB | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 200V | 920mV @ 60A | 200V | -55°C ~ 150°C | 1 Pair Common Cathode | 60A | ||||||||
| MURF30005R | DIODE GEN PURP 50V 150A TO244 | GeneSiC Semiconductor | TO-244AB | Standard | Chassis Mount | TO-244 | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 50V | 1V @ 150A | 50V | -55°C ~ 150°C | 1 Pair Common Anode | 150A | ||||||||
| MBR500100CTR | DIODE MODULE 100V 250A 2TOWER | GeneSiC Semiconductor | Twin Tower | Schottky, Reverse Polarity | Chassis Mount | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 880mV @ 250A | 100V | -55°C ~ 150°C | 1 Pair Common Anode | 250A | ||||||||
| MBRT500150R | DIODE SCHOTTKY 150V 250A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 150V | 880mV @ 250A | 150V | -55°C ~ 150°C | 1 Pair Common Anode | 250A | ||||||||
| MBR7560R | DIODE SCHOTTKY REV 60V DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 75A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 60V | 750mV @ 75A | 60V | -55°C ~ 150°C | |||||||||
| FR85JR05 | DIODE GEN PURP REV 600V 85A DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 85A | Standard, Reverse Polarity | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 100V | 1.4V @ 85A | 600V | 500ns | -40°C ~ 125°C | ||||||||
| GBL01 | BRIDGE RECT 1PHASE 100V 4A GBL | GeneSiC Semiconductor | 4-SIP, GBL | 100V | 4A | Single Phase | Through Hole | GBL | Standard | -55°C ~ 150°C (TJ) | 5µA @ 100V | 1.1V @ 4A | |||||||||
| M3P100A-100 | BRIDGE RECT 3P 1KV 100A MODULE | GeneSiC Semiconductor | Module | 1kV | 100A | Three Phase | Chassis Mount | Module | Standard | -55°C ~ 150°C (TJ) | 10mA @ 1000V | 1.15V @ 100A | |||||||||
| FR6DR05 | DIODE GEN PURP REV 200V 16A DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 16A | Standard, Reverse Polarity | Chassis, Stud Mount | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.4V @ 6A | 200V | 500ns | -65°C ~ 150°C |
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