- Производитель
- Частота
-
- Номинальный ток
- Тип транзистора
- Рабочая температура
- Тип корпуса
- Выходная мощность
- Усиление по току (hFE)
- Граничная частота
- Усиление
- Коэффициент шума
- Voltage - Test
- Current - Test
- Noise Figure (dB Typ @ f)
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Ток коллектора (макс)
|
Граничное напряжение КЭ(макс)
|
Мощность - Макс.
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Тип транзистора
|
Рабочая температура
|
Тип корпуса
|
Выходная мощность
|
Усиление по току (hFE)
|
Граничная частота
|
Усиление
|
Коэффициент шума
|
Voltage - Test
|
Current - Test
|
Noise Figure (dB Typ @ f)
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2SK3078A(TE12L,F) | FET RF N-CH 10V 470 MHZ PW-MINI | Toshiba Semiconductor and Storage | TO-243AA | 470MHz | 10V | 500mA | N-Channel | PW-MINI | 28dbm | 8dB | 4.5V | 50mA | |||||||||
| 2SK3079ATE12LQ | MOSF RF N CH 10V PW-X | Toshiba Semiconductor and Storage | TO-271AA | 470MHz | 10V | 3A | N-Channel | PW-X | 33.5dBmW | 13.5dB | 4.5V | 50mA | |||||||||
| 2SK3074TE12LF | MOSF RF N CH 30V 1A PW-MINI | Toshiba Semiconductor and Storage | TO-243AA | 520MHz | 30V | 1A | N-Channel | SC-62 | 630mW | 14.9dB | 9.6V | 50mA | |||||||||
| RFM08U9X(TE12L,Q) | MOSFET N-CH PW-X | Toshiba Semiconductor and Storage | TO-271AA | 520MHz | 36V | 5A | N-Channel | PW-X | 7.5W | 11.7dB | 9.6V | 50mA | |||||||||
| 2SK209-GR(TE85L,F) | JFET N-CH SOT23 | Toshiba Semiconductor and Storage | TO-236-3, SC-59, SOT-23-3 | 1kHz | N-Channel JFET | SC-59 | 1dB | 10V | 500µA | ||||||||||||
| 2SK3476(TE12L,Q) | MOSF RF N CH 20V 3A PW-X | Toshiba Semiconductor and Storage | TO-271AA | 520MHz | 20V | 3A | N-Channel | PW-X | 7W | 11.4dB | 7.2V | 500mA | |||||||||
| 2SK3075(TE12L,Q) | MOSF RF N CH 30V 5A PW-X | Toshiba Semiconductor and Storage | TO-271AA | 520MHz | 30V | 5A | N-Channel | PW-X | 7.5W | 11.7dB | 9.6V | 50mA | |||||||||
| 2SK209-BL(TE85L,F) | JFET N-CH SOT23 | Toshiba Semiconductor and Storage | TO-236-3, SC-59, SOT-23-3 | 1kHz | N-Channel JFET | SC-59 | 1dB | 10V | 500µA | ||||||||||||
| 2SK209-Y(TE85L,F) | JFET N-CH SOT23 | Toshiba Semiconductor and Storage | TO-236-3, SC-59, SOT-23-3 | 1kHz | N-Channel JFET | SC-59 | 1dB | 10V | 500µA | ||||||||||||
| 2SC5066-O,LF | RF TRANS NPN 12V 7GHZ SSM | Toshiba Semiconductor and Storage | SC-75, SOT-416 | 30mA | 12V | 100mW | Surface Mount | NPN | 125°C (TJ) | SSM | 80 @ 10mA, 5V | 7GHz | 1dB @ 500MHz | ||||||||
| MT4S300U(TE85L,O,F | X34 PB-F RADIO-FREQUENCY SIGE HE | Toshiba Semiconductor and Storage | SC-82A, SOT-343 | 50mA | 4V | 250mW | Surface Mount | NPN | 150°C (TJ) | USQ | 200 @ 10mA, 3V | 26.5GHz | 16.9dB | 0.55dB @ 2GHz | |||||||
| MT3S20TU(TE85L) | RF TRANS NPN 12V 7GHZ UFM | Toshiba Semiconductor and Storage | 3-SMD, Flat Lead | 80mA | 12V | 900mW | Surface Mount | NPN | 150°C (TJ) | UFM | 100 @ 50mA, 5V | 7GHz | 12dB | 1.45dB @ 20mA, 5V | |||||||
| 2SC5085-O(TE85L,F) | RF TRANS NPN 12V 7GHZ USM | Toshiba Semiconductor and Storage | SC-70, SOT-323 | 80mA | 12V | 100mW | Surface Mount | NPN | 125°C (TJ) | SC-70 | 80 @ 20mA, 10V | 7GHz | 1dB @ 500MHz | ||||||||
| 2SC5086-Y,LF | RF TRANS NPN 12V 7GHZ SSM | Toshiba Semiconductor and Storage | SC-75, SOT-416 | 80mA | 12V | 100mW | Surface Mount | NPN | 125°C (TJ) | SSM | 120 @ 20mA, 10V | 7GHz | 1dB @ 500MHz |
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