• Производитель
  • Частота
    • Номинальный ток
    • Тип транзистора
    • Рабочая температура
    • Тип корпуса
    • Выходная мощность
    • Усиление по току (hFE)
    • Граничная частота
    • Усиление
    • Коэффициент шума
    • Voltage - Test
    • Current - Test
    • Noise Figure (dB Typ @ f)
    • Серия
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Списком Таблицей
Найдено: 44
Наименование Описание Производитель
Package / Case
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Частота
Номинальное напряжение
Номинальный ток
Тип транзистора
Рабочая температура
Тип корпуса
Выходная мощность
Усиление по току (hFE)
Граничная частота
Усиление
Коэффициент шума
Voltage - Test
Current - Test
Noise Figure (dB Typ @ f)
2SC2714-O(TE85L,F) RF TRANS NPN 30V 550MHZ SMINI Toshiba Semiconductor and Storage TO-236-3, SC-59, SOT-23-3 20mA 30V 100mW Surface Mount NPN 125°C (TJ) S-Mini 70 @ 1mA, 6V 550MHz 23dB 2.5dB @ 100MHz
MT3S113(TE85L,F) RF TRANS NPN 5.3V 12.5GHZ SMINI Toshiba Semiconductor and Storage TO-236-3, SC-59, SOT-23-3 100mA 5.3V 800mW Surface Mount NPN 150°C (TJ) S-Mini 200 @ 30mA, 5V 12.5GHz 11.8dB 1.45dB @ 1GHz
2SC5108-Y,LF RF TRANS NPN 10V 6GHZ SSM Toshiba Semiconductor and Storage SC-75, SOT-416 30mA 10V 100mW Surface Mount NPN SSM 120 @ 5mA, 5V 6GHz 11dB
2SC5095-O(TE85L,F) RF TRANS NPN 10V 10GHZ SC70 Toshiba Semiconductor and Storage SC-70, SOT-323 15mA 10V 100mW Surface Mount NPN 125°C (TJ) SC-70 80 @ 7mA, 6V 10GHz 13dB ~ 7dB 1.8dB @ 2GHz
2SC5086-O,LF RF TRANS NPN 12V 7GHZ SSM Toshiba Semiconductor and Storage SC-75, SOT-416 80mA 12V 100mW Surface Mount NPN 125°C (TJ) SSM 80 @ 20mA, 10V 7GHz 1dB @ 500MHz
MT3S111(TE85L,F) RF TRANS NPN 6V 11.5GHZ SMINI Toshiba Semiconductor and Storage TO-236-3, SC-59, SOT-23-3 100mA 6V 700mW Surface Mount NPN 150°C (TJ) S-Mini 200 @ 30mA, 5V 11.5GHz 12dB 1.2dB @ 1GHz
MT3S16U(TE85L,F) RF TRANS NPN 5V 4GHZ USM Toshiba Semiconductor and Storage SC-70, SOT-323 60mA 5V 100mW Surface Mount NPN 125°C (TJ) SC-70 80 @ 5mA, 1V 4GHz 4.5dBi 2.4dB @ 1GHz
2SC5095-R(TE85L,F) RF TRANS NPN 10V 10GHZ SC70 Toshiba Semiconductor and Storage SC-70, SOT-323 15mA 10V 100mW Surface Mount NPN 125°C (TJ) SC-70 50 @ 7mA, 6V 10GHz 13dB ~ 7.5dB 1.8dB @ 2GHz
2SC5096-R,LF RF TRANS NPN 10V 10GHZ SSM Toshiba Semiconductor and Storage SC-75, SOT-416 15mA 10V 100mW Surface Mount NPN 125°C (TJ) SSM 50 @ 7mA, 6V 10GHz 1.4dB 1.4dB @ 1GHz
2SC5084YTE85LF RF TRANS NPN 12V 7GHZ SC59 Toshiba Semiconductor and Storage TO-236-3, SC-59, SOT-23-3 80mA 12V 150mW Surface Mount NPN 125°C (TJ) SC-59 120 @ 20mA, 10V 7GHz 11dB 1.1dB @ 1GHz
2SC4915-Y,LF RF TRANS NPN 30V 550MHZ SSM Toshiba Semiconductor and Storage SC-75, SOT-416 20mA 30V 100mW Surface Mount NPN 125°C (TJ) SSM 100 @ 1mA, 6V 550MHz 17dB ~ 23dB 2.3dB ~ 5dB @ 100MHz
2SC4215-O(TE85L,F) RF TRANS NPN 30V 550MHZ USM Toshiba Semiconductor and Storage SC-70, SOT-323 20mA 30V 100mW Surface Mount NPN 125°C (TJ) SC-70 40 @ 1mA, 6V 550MHz 23dB 5dB @ 100MHz
2SC5065-O(TE85L,F) RF TRANS NPN 12V 7GHZ USM Toshiba Semiconductor and Storage SC-70, SOT-323 30mA 12V 100mW Surface Mount NPN 125°C (TJ) SC-70 80 @ 10mA, 5V 7GHz 1dB @ 500MHz
MT3S20P(TE12L,F) RF TRANS NPN 12V 7GHZ PW-MINI Toshiba Semiconductor and Storage TO-243AA 80mA 12V 1.8W Surface Mount NPN 150°C (TJ) PW-MINI 100 @ 50mA, 5V 7GHz 16.5dB 1.45dB @ 1GHz
MT3S113P(TE12L,F) RF TRANS NPN 5.3V 7.7GHZ PW-MINI Toshiba Semiconductor and Storage TO-243AA 100mA 5.3V 1.6W Surface Mount NPN 150°C (TJ) PW-MINI 200 @ 30mA, 5V 7.7GHz 10.5dB 1.45dB @ 1GHz
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