- Производитель
- Частота
-
- Номинальный ток
- Тип транзистора
- Рабочая температура
- Тип корпуса
- Выходная мощность
- Усиление по току (hFE)
- Граничная частота
- Усиление
- Коэффициент шума
- Voltage - Test
- Current - Test
- Noise Figure (dB Typ @ f)
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Ток коллектора (макс)
|
Граничное напряжение КЭ(макс)
|
Мощность - Макс.
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Тип транзистора
|
Рабочая температура
|
Тип корпуса
|
Выходная мощность
|
Усиление по току (hFE)
|
Граничная частота
|
Усиление
|
Voltage - Test
|
Current - Test
|
Noise Figure (dB Typ @ f)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANTX2N4957 | RF TRANS PNP 30V 30MA TO72 | Microsemi Corporation | TO-72-3 Metal Can | 30mA | 30V | 200mW | Through Hole | PNP | -65°C ~ 200°C (TJ) | TO-72 | 30 @ 5mA, 10V | 25dB | 3.5dB @ 450MHz | ||||||||
| TPR1000 | RF TRANS NPN 65V 1.09GHZ 55KV | Microsemi Corporation | 55KV | 80A | 65V | 2900W | Chassis Mount | NPN | 200°C (TJ) | 55KV | 10 @ 1A, 5V | 1.09GHz | 6dB | ||||||||
| JANTXV2N2857UB | RF TRANS NPN 15V 0.04A UB | Microsemi Corporation | 3-SMD, No Lead | 40mA | 15V | 200mW | Surface Mount | NPN | -65°C ~ 200°C (TJ) | UB | 30 @ 3mA, 1V | 21dB | 4.5dB @ 450MHz | ||||||||
| SD1330-05H | RF POWER TRANSISTOR | Microsemi Corporation | |||||||||||||||||||
| 48042 | RF POWER TRANSISTOR | Microsemi Corporation | |||||||||||||||||||
| MRF8372MR1 | TRANS NPN 16V 200MA | Microsemi Corporation | |||||||||||||||||||
| MS1019 | RF POWER TRANSISTOR | Microsemi Corporation | |||||||||||||||||||
| MS2204 | RF TRANS NPN 20V 1.09GHZ M115 | Microsemi Corporation | M115 | 300mA | 20V | 600mW | Chassis Mount | NPN | 200°C (TJ) | M115 | 15 @ 100mA, 5V | 1.09GHz | 10.8dB | ||||||||
| 42105 | RF POWER TRANSISTOR | Microsemi Corporation | |||||||||||||||||||
| 82094 | RF POWER TRANSISTOR | Microsemi Corporation | |||||||||||||||||||
| MRF5812GR2 | RF TRANS NPN 15V 5GHZ 8SO | Microsemi Corporation | 8-SOIC (0.154", 3.90mm Width) | 200mA | 15V | 1.25W | Surface Mount | NPN | 8-SO | 50 @ 50mA, 5V | 5GHz | 13dB ~ 15.5dB | 2dB ~ 3dB @ 500MHz | ||||||||
| 10A030 | RF TRANS NPN 24V 2.5GHZ 55FT | Microsemi Corporation | 55FT | 1.5A | 24V | 13W | Stud Mount | NPN | 200°C (TJ) | 55FT | 20 @ 200mA, 5V | 2.5GHz | 7.8dB ~ 8.5dB | ||||||||
| JAN2N2857 | RF TRANS NPN 15V 500MHZ TO72 | Microsemi Corporation | TO-72-3 Metal Can | 40mA | 15V | 200mW | Through Hole | NPN | -65°C ~ 200°C (TJ) | TO-72 | 30 @ 3mA, 1V | 500MHz | 12.5dB ~ 21dB @ 450MHz | 4.5dB @ 450MHz | Military, MIL-PRF-19500/343 | ||||||
| MRF5812R1 | RF TRANS NPN 15V 5GHZ 8SO | Microsemi Corporation | 8-SOIC (0.154", 3.90mm Width) | 200mA | 15V | 1.25W | Surface Mount | NPN | 8-SO | 50 @ 50mA, 5V | 5GHz | 13dB ~ 15.5dB | 2dB ~ 3dB @ 500MHz | ||||||||
| MRF581G | RF TRANS NPN 18V 5GHZ MICRO X | Microsemi Corporation | Micro-X ceramic (84C) | 200mA | 18V | 1.25W | Surface Mount | NPN | 150°C (TJ) | Micro-X ceramic (84C) | 50 @ 50mA, 5V | 5GHz | 13dB ~ 15.5dB | 3dB ~ 3.5dB @ 500MHz |
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