- Ток коллектора (макс)
- Граничное напряжение КЭ(макс)
- Мощность - Макс.
-
- Тип корпуса
- Входной каскад
- IGBT Type
- Обратный ток коллектора
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Test Condition
- Current - Collector Pulsed (Icm)
- Время обратного восстановления (trr)
- NTC Thermistor
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Ток коллектора (макс)
|
Граничное напряжение КЭ(макс)
|
Мощность - Макс.
|
Вид монтажа
|
Конфигурация
|
Рабочая температура
|
Тип корпуса
|
Входной каскад
|
IGBT Type
|
Обратный ток коллектора
|
Vce(on) (Max) @ Vge, Ic
|
Input Capacitance (Cies) @ Vce
|
Input
|
Test Condition
|
Current - Collector Pulsed (Icm)
|
Время обратного восстановления (trr)
|
NTC Thermistor
|
Switching Energy
|
Gate Charge
|
Td (on/off) @ 25°C
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RGSX5TS65EHRC11 | 8S SHORT-CIRCUIT TOLERANCE, 650V | Rohm Semiconductor | TO-247-3 | 114A | 650V | 404W | Through Hole | -40°C ~ 175°C (TJ) | TO-247N | Standard | Trench Field Stop | 2.15V @ 15V, 75A | 400V, 75A, 10Ohm, 15V | 225A | 116 ns | 3.44mJ (on), 1.9mJ (off) | 79nC | 43ns/113ns | |||||
| RGSX5TS65EGC11 | 8S SHORT-CIRCUIT TOLERANCE, 650V | Rohm Semiconductor | TO-247-3 | 114A | 650V | 404W | Through Hole | -40°C ~ 175°C (TJ) | TO-247N | Standard | Trench Field Stop | 2.15V @ 15V, 75A | 400V, 75A, 10Ohm, 15V | 225A | 116 ns | 3.44mJ (on), 1.9mJ (off) | 79nC | 43ns/113ns | |||||
| RGSX5TS65HRC11 | 8S SHORT-CIRCUIT TOLERANCE, 650V | Rohm Semiconductor | TO-247-3 | 114A | 650V | 404W | Through Hole | -40°C ~ 175°C (TJ) | TO-247N | Standard | Trench Field Stop | 2.15V @ 15V, 75A | 400V, 75A, 10Ohm, 15V | 225A | 3.32mJ (on), 1.9mJ (off) | 79nC | 43ns/113ns | ||||||
| RGSX5TS65DHRC11 | 8S SHORT-CIRCUIT TOLERANCE, 650V | Rohm Semiconductor | TO-247-3 | 114A | 650V | 404W | Through Hole | -40°C ~ 175°C (TJ) | TO-247N | Standard | Trench Field Stop | 2.15V @ 15V, 75A | 400V, 75A, 10Ohm, 15V | 225A | 114ns | 3.32mJ (on), 1.9mJ (off) | 79nC | 43ns/113ns | |||||
| VS-50MT060WHTAPBF | IGBT MODULE 600V 114A 658W MTP | Vishay General Semiconductor - Diodes Division | 12-MTP Module | 114A | 600V | 658W | Chassis Mount | Half Bridge | -40°C ~ 150°C (TJ) | MTP | 400µA | 3.2V @ 15V, 100A | 7.1nF @ 30V | Standard | No | ||||||||
| 50MT060WH | IGBT MODULE 600V 114A 658W 12MTP | Vishay General Semiconductor - Diodes Division | 12-MTP Module | 114A | 600V | 658W | Chassis Mount | Half Bridge | -40°C ~ 150°C (TJ) | 12-MTP | PT | 400µA | 3.2V @ 15V, 100A | 7.1nF @ 30V | Standard | No |
- 10
- 15
- 50
- 100