• Current - Collector (Ic) (Max)
  • Voltage - Collector Emitter Breakdown (Max)
  • Power - Max
    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
  • 10
  • 15
  • 50
  • 100
List Table
Found: 6
Partnumber Description Manufacturer
Package / Case
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Power - Max
Mounting Type
Configuration
Operating Temperature
Supplier Device Package
Input Type
IGBT Type
Current - Collector Cutoff (Max)
Vce(on) (Max) @ Vge, Ic
Input Capacitance (Cies) @ Vce
Input
Test Condition
Current - Collector Pulsed (Icm)
Reverse Recovery Time (trr)
NTC Thermistor
Switching Energy
Gate Charge
Td (on/off) @ 25°C
RGSX5TS65EHRC11 8S SHORT-CIRCUIT TOLERANCE, 650V Rohm Semiconductor TO-247-3 114A 650V 404W Through Hole -40°C ~ 175°C (TJ) TO-247N Standard Trench Field Stop 2.15V @ 15V, 75A 400V, 75A, 10Ohm, 15V 225A 116 ns 3.44mJ (on), 1.9mJ (off) 79nC 43ns/113ns
RGSX5TS65EGC11 8S SHORT-CIRCUIT TOLERANCE, 650V Rohm Semiconductor TO-247-3 114A 650V 404W Through Hole -40°C ~ 175°C (TJ) TO-247N Standard Trench Field Stop 2.15V @ 15V, 75A 400V, 75A, 10Ohm, 15V 225A 116 ns 3.44mJ (on), 1.9mJ (off) 79nC 43ns/113ns
RGSX5TS65HRC11 8S SHORT-CIRCUIT TOLERANCE, 650V Rohm Semiconductor TO-247-3 114A 650V 404W Through Hole -40°C ~ 175°C (TJ) TO-247N Standard Trench Field Stop 2.15V @ 15V, 75A 400V, 75A, 10Ohm, 15V 225A 3.32mJ (on), 1.9mJ (off) 79nC 43ns/113ns
RGSX5TS65DHRC11 8S SHORT-CIRCUIT TOLERANCE, 650V Rohm Semiconductor TO-247-3 114A 650V 404W Through Hole -40°C ~ 175°C (TJ) TO-247N Standard Trench Field Stop 2.15V @ 15V, 75A 400V, 75A, 10Ohm, 15V 225A 114ns 3.32mJ (on), 1.9mJ (off) 79nC 43ns/113ns
VS-50MT060WHTAPBF IGBT MODULE 600V 114A 658W MTP Vishay General Semiconductor - Diodes Division 12-MTP Module 114A 600V 658W Chassis Mount Half Bridge -40°C ~ 150°C (TJ) MTP 400µA 3.2V @ 15V, 100A 7.1nF @ 30V Standard No
50MT060WH IGBT MODULE 600V 114A 658W 12MTP Vishay General Semiconductor - Diodes Division 12-MTP Module 114A 600V 658W Chassis Mount Half Bridge -40°C ~ 150°C (TJ) 12-MTP PT 400µA 3.2V @ 15V, 100A 7.1nF @ 30V Standard No
  • 10
  • 15
  • 50
  • 100