- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANTXV2N6760 | MOSFET N-CH | Microsemi Corporation | TO-204AA (TO-3) | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 4W (Ta), 75W (Tc) | 400V | 5.5A (Tc) | 1.22Ohm @ 5.5A, 10V | 10V | 4V @ 250µA | 39nC @ 10V | ±20V | Military, MIL-PRF-19500/542 | |||||||||||
| APT56M60B2 | MOSFET N-CH 600V 56A T-MAX | Microsemi Corporation | TO-247 [B] | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1040W (Tc) | 600V | 60A (Tc) | 130mOhm @ 28A, 10V | 10V | 5V @ 2.5mA | 280nC @ 10V | 11300pF @ 25V | ±30V | POWER MOS 8™ | ||||||||||
| APT130SM70B | MOSFET N-CH 700V TO247 | Microsemi Corporation | TO-247-3 | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | N-Channel | 556W (Tc) | 700V | 110A (Tc) | 45mOhm @ 60A, 20V | 20V | 2.4V @ 1mA | 220nC @ 20V | 3950pF @ 700V | +25V, -10V | |||||||||||
| JANTXV2N6804 | MOSFET P-CH 100V 11A | Microsemi Corporation | TO-204AA (TO-3) | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 4W (Ta), 75W (Tc) | 100V | 11A (Tc) | 360mOhm @ 11A, 10V | 10V | 4V @ 250µA | 29nC @ 10V | ±20V | Military, MIL-PRF-19500/562 | |||||||||||
| APT10M19SVRG | MOSFET N-CH 100V 75A D3PAK | Microsemi Corporation | D3 [S] | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | N-Channel | 100V | 75A (Tc) | 19mOhm @ 500mA, 10V | 4V @ 1mA | 300nC @ 10V | 6120pF @ 25V | POWER MOS V® | ||||||||||||||
| JANSR2N7261U | N CHANNEL MOSFET LCC-18 | Microsemi Corporation | 18-ULCC (9.14x7.49) | Surface Mount | 18-CLCC | MOSFET (Metal Oxide) | -55°C ~ 150°C | N-Channel | 25W (Tc) | 100V | 8A (Tc) | 185mOhm @ 8A, 12V | 12V | 4V @ 1mA | 50nC @ 12V | ±20V | Military, MIL-PRF-19500/601 | |||||||||||
| APTMC120AM16CD3AG | MOSFET 2N-CH 1200V 131A D3 | Microsemi Corporation | D3 | 625W | Chassis Mount | D-3 Module | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 131A (Tc) | Silicon Carbide (SiC) | 20mOhm @ 100A, 20V | 2.2V @ 5mA (Typ) | 246nC @ 20V | 4750pF @ 1000V | |||||||||||||
| APT40SM120S | MOSFET N-CH 1200V 41A D3PAK | Microsemi Corporation | D3Pak | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | N-Channel | 273W (Tc) | 1200V | 41A (Tc) | 100mOhm @ 20A, 20V | 20V | 3V @ 1mA (Typ) | 130nC @ 20V | 2560pF @ 1000V | +25V, -10V | |||||||||||
| APT10045B2FLLG | MOSFET N-CH 1000V 23A T-MAX | Microsemi Corporation | T-MAX™ [B2] | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | N-Channel | 1000V | 23A (Tc) | 460mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154nC @ 10V | 4350pF @ 25V | POWER MOS 7® | ||||||||||||||
| APTM50DSKM65T3G | MOSFET 2N-CH 500V 51A SP3 | Microsemi Corporation | SP3 | 390W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 500V | 51A | Standard | 78mOhm @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7000pF @ 25V | |||||||||||||
| APTM20UM03FAG | MOSFET N-CH 200V 580A SP6 | Microsemi Corporation | SP6 | Chassis Mount | SP6 | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | N-Channel | 2270W (Tc) | 200V | 580A (Tc) | 3.6mOhm @ 290A, 10V | 10V | 5V @ 15mA | 840nC @ 10V | 43300pF @ 25V | ±30V | POWER MOS 7® | ||||||||||
| VRF3933 | MOSF RF N CH 250V 20A M177 | Microsemi Corporation | M177 | 300W | 30MHz | 250V | 20A | M177 | N-Channel | 22dB | 100V | 250mA | ||||||||||||||||
| ARF469BG | RF MOSFET N-CHANNEL 150V TO-264 | Microsemi Corporation | TO-264 | 350W | 45MHz | 500V | 30A | TO-264-3, TO-264AA | N-Channel | 16dB | 150V | 250µA | ||||||||||||||||
| APT5014SLLG/TR | MOSFET N-CH 500V 35A TO-247 | Microsemi Corporation | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 403W (Tc) | 500V | 35A (Tc) | 140mOhm @ 17.5A, 10V | 10V | 5V @ 1mA | 72nC @ 10V | 3261pF @ 25V | ±30V | POWER MOS 7® | ||||||||||
| APTMC120AM25CT3AG | MOSFET 2N-CH 1200V 105A SP3F | Microsemi Corporation | SP3 | 500W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 113A (Tc) | Silicon Carbide (SiC) | 25mOhm @ 80A, 20V | 2.2V @ 4mA (Typ) | 197nC @ 20V | 3800pF @ 1000V |
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