- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APT50N60JCCU2 | MOSFET N-CH 600V 50A SOT-227 | Microsemi Corporation | SOT-227 | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | N-Channel | 290W (Tc) | 600V | 50A (Tc) | 45mOhm @ 22.5A, 10V | 10V | 3.9V @ 3mA | 150nC @ 10V | 6800pF @ 25V | ±20V | |||||||||||
| APT24F50S | MOSFET N-CH 500V 24A D3PAK | Microsemi Corporation | D3Pak | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 335W (Tc) | 500V | 24A (Tc) | 240mOhm @ 11A, 10V | 10V | 5V @ 1mA | 90nC @ 10V | 3630pF @ 25V | ±30V | POWER MOS 8™ | ||||||||||
| 2N7236U | MOSFET P-CH 100V SMD1 | Microsemi Corporation | TO-267AB | Surface Mount | TO-267AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 4W (Ta), 125W (Tc) | 100V | 18A (Tc) | 200mOhm @ 11A, 10V | 10V | 4V @ 250µA | 60nC @ 10V | ±20V | ||||||||||||
| APT6025BLLG | MOSFET N-CH 600V 24A TO-247 | Microsemi Corporation | TO-247 [B] | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | N-Channel | 600V | 24A (Tc) | 250mOhm @ 12A, 10V | 5V @ 1mA | 65nC @ 10V | 2910pF @ 25V | POWER MOS 7® | ||||||||||||||
| APT8030LVRG | MOSFET N-CH 800V 27A TO-264 | Microsemi Corporation | TO-264 [L] | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | N-Channel | 800V | 27A (Tc) | 300mOhm @ 500mA, 10V | 4V @ 2.5mA | 510nC @ 10V | 7900pF @ 25V | POWER MOS V® | ||||||||||||||
| APT10035B2FLLG | MOSFET N-CH 1000V 28A T-MAX | Microsemi Corporation | T-MAX™ [B2] | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 690W (Tc) | 1000V | 28A (Tc) | 370mOhm @ 14A, 10V | 10V | 5V @ 2.5mA | 186nC @ 10V | 5185pF @ 25V | ±30V | POWER MOS 7® | ||||||||||
| APTM100DSK35T3G | MOSFET 2N-CH 1000V 22A SP3 | Microsemi Corporation | SP3 | 390W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 1000V (1kV) | 22A | Standard | 420mOhm @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5200pF @ 25V | |||||||||||||
| APTM60A23FT1G | MOSFET 2N-CH 600V 20A SP1 | Microsemi Corporation | SP1 | 208W | Chassis Mount | SP1 | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 600V | 20A | Standard | 276mOhm @ 17A, 10V | 5V @ 1mA | 165nC @ 10V | 5316pF @ 25V | |||||||||||||
| JANTX2N6798U | MOSFET N-CH | Microsemi Corporation | 18-ULCC (9.14x7.49) | Surface Mount | 18-CLCC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 800mW (Ta), 25W (Tc) | 200V | 5.5A (Tc) | 420mOhm @ 5.5A, 10V | 10V | 4V @ 250µA | 42.07nC @ 10V | ±20V | Military, MIL-PRF-19500/557 | |||||||||||
| APT9F100B | MOSFET N-CH 1000V 9A TO-247 | Microsemi Corporation | TO-247 [B] | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 337W (Tc) | 1000V | 9A (Tc) | 1.6Ohm @ 5A, 10V | 10V | 5V @ 1mA | 80nC @ 10V | 2606pF @ 25V | ±30V | POWER MOS 8™ | ||||||||||
| APT11N80BC3G | MOSFET N-CH 800V 11A TO-247 | Microsemi Corporation | TO-247 [B] | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 156W (Tc) | 800V | 11A (Tc) | 450mOhm @ 7.1A, 10V | 10V | 3.9V @ 680µA | 60nC @ 10V | 1585pF @ 25V | ±20V | |||||||||||
| APT48M80L | MOSFET N-CH 800V 48A TO-264 | Microsemi Corporation | TO-264 [L] | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1135W (Tc) | 800V | 49A (Tc) | 200mOhm @ 24A, 10V | 10V | 5V @ 2.5mA | 305nC @ 10V | 9330pF @ 25V | ±30V | |||||||||||
| APT12031JFLL | MOSFET N-CH 1200V 30A SOT-227 | Microsemi Corporation | ISOTOP® | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 690AW (Tc) | 1200V | 30A (Tc) | 330mOhm @ 15A, 10V | 10V | 5V @ 5mA | 365nC @ 10V | 9480pF @ 25V | ±30V | POWER MOS 7® | ||||||||||
| APT20M18LVRG | MOSFET N-CH 200V 100A TO-264 | Microsemi Corporation | TO-264 [L] | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | N-Channel | 200V | 100A (Tc) | 18mOhm @ 50A, 10V | 4V @ 2.5mA | 330nC @ 10V | 9880pF @ 25V | POWER MOS V® | ||||||||||||||
| APT20M20B2FLLG | MOSFET N-CH 200V 100A T-MAX | Microsemi Corporation | T-MAX™ [B2] | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | N-Channel | 200V | 100A (Tc) | 20mOhm @ 50A, 10V | 5V @ 2.5mA | 110nC @ 10V | 6850pF @ 25V | POWER MOS 7® |
- 10
- 15
- 50
- 100