- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APTM50UM19SG | MOSFET N-CH 500V 163A J3 | Microsemi Corporation | Module | Chassis Mount | J3 Module | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | N-Channel | 1136W (Tc) | 500V | 163A (Tc) | 19mOhm @ 81.5A, 10V | 10V | 5V @ 10mA | 492nC @ 10V | 22400pF @ 25V | ±30V | |||||||||||
| APTML202UM18R010T3AG | MOSFET 2N-CH 200V 109A SP3 | Microsemi Corporation | SP3 | 480W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 200V | 109A (Tc) | Standard | 19mOhm @ 50A, 10V | 4V @ 2.5mA | 9880pF @ 25V | ||||||||||||||
| APT6038BLLG | MOSFET N-CH 600V 17A TO-247 | Microsemi Corporation | TO-247 [B] | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | N-Channel | 600V | 17A (Tc) | 380mOhm @ 8.5A, 10V | 5V @ 1mA | 43nC @ 10V | 1850pF @ 25V | POWER MOS 7® | ||||||||||||||
| JAN2N6802 | MOSFET N-CH TO-205AF TO-39 | Microsemi Corporation | TO-39 | Through Hole | TO-205AF Metal Can | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 800mW (Ta), 25W (Tc) | 500V | 2.5A (Tc) | 1.6Ohm @ 2.5A, 10V | 10V | 4V @ 250µA | 33nC @ 10V | ±20V | Military, MIL-PRF-19500/557 | |||||||||||
| APT8018JN | MOSFET N-CH 800V 40A ISOTOP | Microsemi Corporation | ISOTOP® | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 690W (Tc) | 800V | 40A (Tc) | 180mOhm @ 20A, 10V | 10V | 4V @ 5mA | 700nC @ 10V | 14000pF @ 25V | ±30V | POWER MOS IV® | ||||||||||
| APT10M11B2VFRG | MOSFET N-CH 100V 100A T-MAX | Microsemi Corporation | T-MAX™ | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 520W (Tc) | 100V | 100A (Tc) | 11mOhm @ 500mA, 10V | 10V | 4V @ 2.5mA | 450nC @ 10V | 10300pF @ 25V | ±30V | POWER MOS V® | ||||||||||
| JANSR2N7268U | N CHANNEL MOSFET SMD-1 | Microsemi Corporation | U1 (SMD-1) | Surface Mount | 3-SMD, No Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C | N-Channel | 150W (Tc) | 100V | 34A (Tc) | 70mOhm @ 34A, 12V | 12V | 4V @ 1mA | 160nC @ 12V | ±20V | Military, MIL-PRF-19500/603 | |||||||||||
| APL502LG | MOSFET N-CH 500V 58A TO-264 | Microsemi Corporation | TO-264 [L] | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 730W (Tc) | 500V | 58A (Tc) | 90mOhm @ 29A, 12V | 15V | 4V @ 2.5mA | 9000pF @ 25V | ±30V | ||||||||||||
| APTM50SKM17G | MOSFET N-CH 500V 180A SP6 | Microsemi Corporation | SP6 | Chassis Mount | SP6 | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | N-Channel | 1250W (Tc) | 500V | 180A (Tc) | 20mOhm @ 90A, 10V | 10V | 5V @ 10mA | 560nC @ 10V | 28000pF @ 25V | ±30V | |||||||||||
| JAN2N6802U | MOSFET N-CH 18-LCC | Microsemi Corporation | 18-ULCC (9.14x7.49) | Surface Mount | 18-CLCC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 800mW (Ta), 25W (Tc) | 500V | 2.5A (Tc) | 1.6Ohm @ 2.5A, 10V | 10V | 4V @ 250µA | 33nC @ 10V | ±20V | Military, MIL-PRF-19500/557 | |||||||||||
| JANTX2N6796U | MOSFET N-CH 100V 8A | Microsemi Corporation | 18-ULCC (9.14x7.49) | Surface Mount | 18-CLCC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 800mW (Ta), 25W (Tc) | 100V | 8A (Tc) | 195mOhm @ 8A, 10V | 10V | 4V @ 250µA | 28.51nC @ 10V | ±20V | Military, MIL-PRF-19500/557 | |||||||||||
| APT6040BN | MOSFET N-CH 600V 18A TO247AD | Microsemi Corporation | TO-247AD | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 310W (Tc) | 600V | 18A (Tc) | 400mOhm @ 9A, 10V | 10V | 4V @ 1mA | 130nC @ 10V | 2950pF @ 25V | ±30V | POWER MOS IV® | ||||||||||
| ARF448BG | RF FET N CH 450V 15A TO247 | Microsemi Corporation | TO-247 | 140W | 40.68MHz | 450V | 15A | TO-247-3 | N-Channel | 15dB | 150V | |||||||||||||||||
| APT58MJ50J | MOSFET N-CH 500V 58A ISOTOP | Microsemi Corporation | ISOTOP® | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 540W (Tc) | 500V | 58A (Tc) | 65mOhm @ 42A, 10V | 10V | 5V @ 2.5mA | 340nC @ 10V | 13500pF @ 25V | ±30V | POWER MOS 8™ | ||||||||||
| APT22F120L | MOSFET N-CH 1200V 23A TO264 | Microsemi Corporation | TO-264 [L] | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1040W (Tc) | 1200V | 23A (Tc) | 700mOhm @ 12A, 10V | 10V | 5V @ 2.5mA | 260nC @ 10V | 8370pF @ 25V | ±30V | POWER MOS 8™ |
- 10
- 15
- 50
- 100