- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JAN2N6804 | MOSFET P-CH 100V 11A TO-3 | Microsemi Corporation | TO-204AA (TO-3) | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 4W (Ta), 75W (Tc) | 100V | 11A (Tc) | 360mOhm @ 11A, 10V | 10V | 4V @ 250µA | 29nC @ 10V | ±20V | Military, MIL-PRF-19500/562 | |||||||||||
| APT10M25BVRG | MOSFET N-CH 100V 75A TO-247 | Microsemi Corporation | TO-247 [B] | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | N-Channel | 100V | 75A (Tc) | 25mOhm @ 500mA, 10V | 4V @ 1mA | 225nC @ 10V | 5160pF @ 25V | POWER MOS V® | ||||||||||||||
| APTC60DDAM24T3G | MOSFET 2N-CH 600V 95A SP3 | Microsemi Corporation | SP3 | 462W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 2 N Channel (Dual Buck Chopper) | 600V | 95A | Super Junction | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | CoolMOS™ | ||||||||||||
| APT53N60SC6 | MOSFET N-CH 600V 53A D3PAK | Microsemi Corporation | D3Pak | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 417W (Tc) | 600V | 53A (Tc) | Super Junction | 70mOhm @ 25.8A, 10V | 10V | 3.5V @ 1.72mA | 154nC @ 10V | 4020pF @ 25V | ±20V | ||||||||||
| APTJC120AM13VCT1AG | MOSFET SIC PHASE LEG MODULE | Microsemi Corporation | Module | Chassis Mount | Module | |||||||||||||||||||||||
| APT84F50L | MOSFET N-CH 500V 84A TO-264 | Microsemi Corporation | TO-264 [L] | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1135W (Tc) | 500V | 84A (Tc) | 65mOhm @ 42A, 10V | 10V | 5V @ 2.5mA | 340nC @ 10V | 13500pF @ 25V | ±30V | POWER MOS 8™ | ||||||||||
| JANTXV2N6784 | MOSFET N-CH | Microsemi Corporation | TO-205AF (TO-39) | Through Hole | TO-205AF Metal Can | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 800mW (Ta), 15W (Tc) | 200V | 2.25A (Tc) | 1.6Ohm @ 2.25A, 10V | 10V | 4V @ 250µA | 8.6nC @ 10V | ±20V | Military, MIL-PRF-19500/556 | |||||||||||
| ARF1510 | MOSFET RF N-CH 1000V 8A T1 | Microsemi Corporation | T-1 | 750W | 40.7MHz | 1000V | 8A | T-1 | N-Channel | 15dB | 400V | |||||||||||||||||
| APT50M50JVR | MOSFET N-CH 500V 77A SOT-227 | Microsemi Corporation | ISOTOP® | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | N-Channel | 500V | 77A | 50mOhm @ 500mA, 10V | 4V @ 5mA | 1000nC @ 10V | 19600pF @ 25V | POWER MOS V® | ||||||||||||||
| JAN2N6762 | MOSFET N-CH TO-204AE TO-3 | Microsemi Corporation | TO-204AA (TO-3) | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 4W (Ta), 75W (Tc) | 500V | 4.5A (Tc) | 1.8Ohm @ 4.5A, 10V | 10V | 4V @ 250µA | 40nC @ 10V | ±20V | Military, MIL-PRF-19500/542 | |||||||||||
| APT29F80J | MOSFET N-CH 800V 31A SOT-227 | Microsemi Corporation | ISOTOP® | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 543W (Tc) | 800V | 31A (Tc) | 210mOhm @ 24A, 10V | 10V | 5V @ 2.5mA | 303nC @ 10V | 9326pF @ 25V | ±30V | POWER MOS 8™ | ||||||||||
| APT5010JFLL | MOSFET N-CH 500V 41A SOT-227 | Microsemi Corporation | ISOTOP® | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | N-Channel | 500V | 41A | 100mOhm @ 20.5A, 10V | 5V @ 2.5mA | 95nC @ 10V | 4360pF @ 25V | POWER MOS 7® | ||||||||||||||
| APTM50DUM25TG | MOSFET 2N-CH 500V 149A LP8 | Microsemi Corporation | SP4 | 1250W | Chassis Mount | SP4 | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 500V | 149A | Standard | 25mOhm @ 74.5A, 10V | 4V @ 8mA | 1200nC @ 10V | 29600pF @ 25V | |||||||||||||
| APT6040BNG | MOSFET N-CH 600V 18A TO247AD | Microsemi Corporation | TO-247AD | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 310W (Tc) | 600V | 18A (Tc) | 400mOhm @ 9A, 10V | 10V | 4V @ 1mA | 130nC @ 10V | 2950pF @ 25V | ±30V | POWER MOS IV® | ||||||||||
| APTC60SKM35T1G | MOSFET N-CH 600V 72A SP1 | Microsemi Corporation | SP1 | Chassis Mount | SP1 | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | N-Channel | 416W (Tc) | 600V | 72A (Tc) | 35mOhm @ 72A, 10V | 10V | 3.9V @ 5.4mA | 518nC @ 10V | 14000pF @ 25V | ±20V |
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