- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VRF2933FL | MOSFET RF N-CH 170V 30MHZ T2 | Microsemi Corporation | M177 | 300W | 30MHz | 170V | 42A | M177 | N-Channel | 22dB | 50V | 250mA | ||||||||||||||||
| APT30F60J | MOSFET N-CH 600V 31A SOT-227 | Microsemi Corporation | ISOTOP® | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 355W (Tc) | 600V | 31A (Tc) | 150mOhm @ 21A, 10V | 10V | 5V @ 2.5mA | 215nC @ 10V | 8590pF @ 25V | ±30V | POWER MOS 8™ | ||||||||||
| APTM50HM65FTG | MOSFET 4N-CH 500V 51A SP4 | Microsemi Corporation | SP4 | 390W | Chassis Mount | SP4 | -40°C ~ 150°C (TJ) | 4 N-Channel (H-Bridge) | 500V | 51A | Standard | 78mOhm @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7000pF @ 25V | |||||||||||||
| APT10M07JVFR | MOSFET N-CH 100V 225A SOT-227 | Microsemi Corporation | ISOTOP® | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | N-Channel | 100V | 225A | 7mOhm @ 500mA, 10V | 4V @ 5mA | 1050nC @ 10V | 21600pF @ 25V | POWER MOS V® | ||||||||||||||
| APT4012BVRG | MOSFET N-CH 400V 37A TO247AD | Microsemi Corporation | TO-247AD | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 370W (Tc) | 400V | 37A (Tc) | 120mOhm @ 18.5A, 10V | 10V | 4V @ 1mA | 290nC @ 10V | 5400pF @ 25V | ±30V | POWER MOS V® | ||||||||||
| APT44F80B2 | MOSFET N-CH 800V 47A T-MAX | Microsemi Corporation | T-MAX™ [B2] | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1135W (Tc) | 800V | 47A (Tc) | 210mOhm @ 24A, 10V | 10V | 5V @ 2.5mA | 305nC @ 10V | 9330pF @ 25V | ±30V | POWER MOS 8™ | ||||||||||
| APTC80DDA15T3G | MOSFET 2N-CH 800V 28A SP3 | Microsemi Corporation | SP3 | 277W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 800V | 28A | Standard | 150mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | |||||||||||||
| JANTXV2N7236 | MOSFET P-CH 100V 18A | Microsemi Corporation | TO-254AA | Through Hole | TO-254-3, TO-254AA (Straight Leads) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 4W (Ta), 125W (Tc) | 100V | 18A (Tc) | 220mOhm @ 18A, 10V | 10V | 4V @ 250µA | 60nC @ 10V | ±20V | Military, MIL-PRF-19500/595 | |||||||||||
| APT23F60B | MOSFET N-CH 600V 23A TO-247 | Microsemi Corporation | TO-247 [B] | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 415W (Tc) | 600V | 24A (Tc) | 290mOhm @ 11A, 10V | 10V | 5V @ 1mA | 110nC @ 10V | 4415pF @ 25V | ±30V | POWER MOS 8™ | ||||||||||
| APT5010B2VRG | MOSFET N-CH 500V 47A T-MAX | Microsemi Corporation | T-MAX™ [B2] | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | N-Channel | 500V | 47A (Tc) | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | 470nC @ 10V | 8900pF @ 25V | POWER MOS V® | ||||||||||||||
| APTC60AM45B1G | MOSFET 3N-CH 600V 49A SP1 | Microsemi Corporation | SP1 | 250W | Chassis Mount | SP1 | -40°C ~ 150°C (TJ) | 3 N Channel (Phase Leg + Boost Chopper) | 600V | 49A | Standard | 45mOhm @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | 7200pF @ 25V | CoolMOS™ | ||||||||||||
| JAN2N7228U | MOSFET N-CH TO-267AB | Microsemi Corporation | TO-267AB | Surface Mount | TO-267AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 4W (Ta), 150W (Tc) | 500V | 12A (Tc) | 515mOhm @ 12A, 10V | 10V | 4V @ 250µA | 120nC @ 10V | ±20V | Military, MIL-PRF-19500/592 | |||||||||||
| APTM120UM70FAG | MOSFET N-CH 1200V 171A SP6 | Microsemi Corporation | SP6 | Chassis Mount | SP6 | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | N-Channel | 5000W (Tc) | 1200V | 171A (Tc) | 80mOhm @ 85.5A, 10V | 10V | 5V @ 30mA | 1650nC @ 10V | 43500pF @ 25V | ±30V | |||||||||||
| APT47M60J | MOSFET N-CH 600V 49A SOT-227 | Microsemi Corporation | ISOTOP® | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 540W (Tc) | 600V | 49A (Tc) | 90mOhm @ 33A, 10V | 10V | 5V @ 2.5mA | 330nC @ 10V | 13190pF @ 25V | ±30V | POWER MOS 8™ | ||||||||||
| APT70SM70J | POWER MOSFET - SIC | Microsemi Corporation | SOT-227 | Chassis Mount | SOT-227-4, miniBLOC | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | N-Channel | 165W (Tc) | 700V | 49A (Tc) | 70mOhm @ 32.5A, 20V | 20V | 2.5V @ 1mA | 125nC @ 20V | +25V, -10V |
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