- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APT12031JFLL | MOSFET N-CH 1200V 30A SOT-227 | Microsemi Corporation | ISOTOP® | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 690AW (Tc) | 1200V | 30A (Tc) | 330mOhm @ 15A, 10V | 10V | 5V @ 5mA | 365nC @ 10V | 9480pF @ 25V | ±30V | POWER MOS 7® | ||||||||||
| APT20M18LVRG | MOSFET N-CH 200V 100A TO-264 | Microsemi Corporation | TO-264 [L] | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | N-Channel | 200V | 100A (Tc) | 18mOhm @ 50A, 10V | 4V @ 2.5mA | 330nC @ 10V | 9880pF @ 25V | POWER MOS V® | ||||||||||||||
| APT20M20B2FLLG | MOSFET N-CH 200V 100A T-MAX | Microsemi Corporation | T-MAX™ [B2] | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | N-Channel | 200V | 100A (Tc) | 20mOhm @ 50A, 10V | 5V @ 2.5mA | 110nC @ 10V | 6850pF @ 25V | POWER MOS 7® | ||||||||||||||
| APT12057B2FLLG | MOSFET N-CH 1200V 22A T-MAX | Microsemi Corporation | T-MAX™ [B2] | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 690W (Tc) | 1200V | 22A (Tc) | 570mOhm @ 11A, 10V | 10V | 5V @ 2.5mA | 185nC @ 10V | 5155pF @ 25V | ±30V | POWER MOS 7® | ||||||||||
| JAN2N6764 | MOSFET N-CH TO-204AE TO-3 | Microsemi Corporation | Through Hole | TO-204AE | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 4W (Ta), 150W (Tc) | 100V | 38A (Tc) | 65mOhm @ 38A, 10V | 10V | 4V @ 250µA | 125nC @ 10V | ±20V | Military, MIL-PRF-19500/543 | ||||||||||||
| 2N6784 | MOSFET N-CH 200V TO-205AF | Microsemi Corporation | TO-39 | Through Hole | TO-205AF Metal Can | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 800mW (Ta), 15W (Tc) | 200V | 2.25A (Tc) | 1.5Ohm @ 1.5A, 0V | 10V | 4V @ 250µA | 8.6nC @ 10V | ±20V | ||||||||||||
| ARF449AG | RF PWR MOSFET 450V TO-247 | Microsemi Corporation | TO-247 | 90W | 81.36MHz | 450V | 9A | TO-247-3 | N-Channel | 13dB | 150V | |||||||||||||||||
| APT1201R4BFLLG | MOSFET N-CH 1200V 9A TO-247 | Microsemi Corporation | TO-247 [B] | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 1200V | 9A (Tc) | 1.5Ohm @ 4.5A, 10V | 10V | 5V @ 1mA | 75nC @ 10V | 2030pF @ 25V | ±30V | POWER MOS 7® | ||||||||||
| APTM20HM10FG | MOSFET 4N-CH 200V 175A SP6 | Microsemi Corporation | SP6 | 694W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 4 N-Channel (H-Bridge) | 200V | 175A | Standard | 12mOhm @ 87.5A, 10V | 5V @ 5mA | 224nC @ 10V | 13700pF @ 25V | |||||||||||||
| APT20F50B | MOSFET N-CH 500V 20A TO-247 | Microsemi Corporation | TO-247 [B] | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 290W (Tc) | 500V | 20A (Tc) | 300mOhm @ 10A, 10V | 10V | 5V @ 500µA | 75nC @ 10V | 2950pF @ 25V | ±30V | |||||||||||
| APT80F60J | MOSFET N-CH 600V 84A SOT-227 | Microsemi Corporation | ISOTOP® | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 961W (Tc) | 600V | 84A (Tc) | 55mOhm @ 60A, 10V | 10V | 5V @ 2.5mA | 598nC @ 10V | 23994pF @ 25V | ±30V | POWER MOS 8™ | ||||||||||
| JAN2N7334 | MOSFET 4N-CH 100V 1A MO-036AB | Microsemi Corporation | MO-036AB | 1.4W | Through Hole | 14-DIP (0.300", 7.62mm) | -55°C ~ 150°C (TJ) | 4 N-Channel | 100V | 1A | Standard | 700mOhm @ 600mA, 10V | 4V @ 250µA | 60nC @ 10V | Military, MIL-PRF-19500/597 | |||||||||||||
| APT50M65B2LLG | MOSFET N-CH 500V 67A T-MAX | Microsemi Corporation | T-MAX™ [B2] | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 694W (Tc) | 500V | 67A (Tc) | 65mOhm @ 33.5A, 10V | 10V | 5V @ 2.5mA | 141nC @ 10V | 7010pF @ 25V | ±30V | POWER MOS 7® | ||||||||||
| APT28F60B | MOSFET N-CH 600V 28A TO-247 | Microsemi Corporation | TO-247 [B] | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 520W (Tc) | 600V | 30A (Tc) | 250mOhm @ 14A, 10V | 10V | 5V @ 1mA | 140nC @ 10V | 5575pF @ 25V | ±30V | |||||||||||
| JANTXV2N6764T1 | MOSFET N-CH 100V 38A | Microsemi Corporation | TO-254AA | Through Hole | TO-254-3, TO-254AA (Straight Leads) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 4W (Ta), 150W (Tc) | 100V | 38A (Tc) | 65mOhm @ 38A, 10V | 10V | 4V @ 250µA | 125nC @ 10V | ±20V | Military, MIL-PRF-19500/543 |
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