-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF2804STRLPBF | MOSFET N-CH 40V 75A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 40V | 75A (Tc) | 2mOhm @ 75A, 10V | 10V | 4V @ 250µA | 240nC @ 10V | 6450pF @ 25V | ±20V | HEXFET® |
| IRFS5615TRLPBF | MOSFET N-CH 150V 33A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 144W (Tc) | 150V | 33A (Tc) | 42mOhm @ 21A, 10V | 10V | 5V @ 100µA | 40nC @ 10V | 1750pF @ 50V | ±20V | |
| IRLS3034TRLPBF | MOSFET N-CH 40V 195A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 375W (Tc) | 40V | 195A (Tc) | 1.7mOhm @ 195A, 10V | 4.5V, 10V | 2.5V @ 250µA | 162nC @ 4.5V | 10315pF @ 25V | ±20V | HEXFET® |
| IRF1407STRRPBF | MOSFET N-CH 75V 100A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 200W (Tc) | 75V | 100A (Tc) | 7.8mOhm @ 78A, 10V | 10V | 4V @ 250µA | 250nC @ 10V | 5600pF @ 25V | ±20V | HEXFET® |
| IRFS3207TRLPBF | MOSFET N-CH 75V 170A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 75V | 170A (Tc) | 4.5mOhm @ 75A, 10V | 10V | 4V @ 250µA | 260nC @ 10V | 7600pF @ 50V | ±20V | HEXFET® |
| IRF3205SPBF | MOSFET N-CH 55V 110A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 200W (Tc) | 55V | 110A (Tc) | 8mOhm @ 62A, 10V | 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | ±20V | HEXFET® |
| IRF1310NSTRR | MOSFET N-CH 100V 42A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 160W (Tc) | 100V | 42A (Tc) | 36mOhm @ 22A, 10V | 10V | 4V @ 250µA | 110nC @ 10V | 1900pF @ 25V | ±20V | HEXFET® |
| IRF2807S | MOSFET N-CH 75V 82A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 230W (Tc) | 75V | 82A (Tc) | 13mOhm @ 43A, 10V | 10V | 4V @ 250µA | 160nC @ 10V | 3820pF @ 25V | ±20V | HEXFET® |
| IRF520NSPBF | MOSFET N-CH 100V 9.7A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | N-Channel | 3.8W (Ta), 48W (Tc) | 100V | 9.7A (Tc) | 200mOhm @ 5.7A, 10V | 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | ±20V | HEXFET® | |
| IRF630NS | MOSFET N-CH 200V 9.3A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 82W (Tc) | 200V | 9.3A (Tc) | 300mOhm @ 5.4A, 10V | 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | ±20V | HEXFET® |
| IRF9Z34NSTRR | MOSFET P-CH 55V 19A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 3.8W (Ta), 68W (Tc) | 55V | 19A (Tc) | 100mOhm @ 10A, 10V | 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | ±20V | HEXFET® |
| IRF540ZSTRL | MOSFET N-CH 100V 36A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 92W (Tc) | 100V | 36A (Tc) | 26.5mOhm @ 22A, 10V | 10V | 4V @ 250µA | 63nC @ 10V | 1770pF @ 25V | ±20V | HEXFET® |
| IRFS3307 | MOSFET N-CH 75V 130A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 250W (Tc) | 75V | 130A (Tc) | 6.3mOhm @ 75A, 10V | 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | ±20V | HEXFET® |
| IRF1010NSTRL | MOSFET N-CH 55V 85A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 180W (Tc) | 55V | 85A (Tc) | 11mOhm @ 43A, 10V | 10V | 4V @ 250µA | 120nC @ 10V | 3210pF @ 25V | ±20V | HEXFET® |
| IRFS3307ZPBF | MOSFET N-CH 75V 120A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 230W (Tc) | 75V | 120A (Tc) | 5.8mOhm @ 75A, 10V | 10V | 4V @ 150µA | 110nC @ 10V | 4750pF @ 50V | ±20V | HEXFET® |
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