• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
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    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 697
  • IRF2804STRLPBF
    MOSFET N-CH 40V 75A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
    • Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFS5615TRLPBF
    MOSFET N-CH 150V 33A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
    • Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 144W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRLS3034TRLPBF
    MOSFET N-CH 40V 195A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 162nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 10315pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 375W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF1407STRRPBF
    MOSFET N-CH 75V 100A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFS3207TRLPBF
    MOSFET N-CH 75V 170A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF3205SPBF
    MOSFET N-CH 55V 110A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
    • Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3247pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 200W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF1310NSTRR
    MOSFET N-CH 100V 42A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
    • Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.8W (Ta), 160W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF2807S
    MOSFET N-CH 75V 82A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
    • Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 230W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF520NSPBF
    MOSFET N-CH 100V 9.7A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
    • Rds On (Max) @ Id, Vgs: 200mOhm @ 5.7A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF630NS
    MOSFET N-CH 200V 9.3A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
    • Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 82W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF9Z34NSTRR
    MOSFET P-CH 55V 19A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
    • Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF540ZSTRL
    MOSFET N-CH 100V 36A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
    • Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 92W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFS3307
    MOSFET N-CH 75V 130A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.3mOhm @ 75A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 250W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF1010NSTRL
    MOSFET N-CH 55V 85A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
    • Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3210pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 180W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFS3307ZPBF
    MOSFET N-CH 75V 120A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 230W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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