-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRL3303D1STRL | MOSFET N-CH 30V 38A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 68W (Tc) | 30V | 38A (Tc) | 26mOhm @ 20A, 10V | 4.5V, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | ±16V | HEXFET® |
| IRL1404ZSPBF | MOSFET N-CH 40V 75A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 230W (Tc) | 40V | 75A (Tc) | 3.1mOhm @ 75A, 10V | 4.5V, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | ±16V | HEXFET® |
| IRF3415S | MOSFET N-CH 150V 43A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 200W (Tc) | 150V | 43A (Tc) | 42mOhm @ 22A, 10V | 10V | 4V @ 250µA | 200nC @ 10V | 2400pF @ 25V | ±20V | HEXFET® |
| IRF9520NSPBF | MOSFET P-CH 100V 6.8A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 3.8W (Ta), 48W (Tc) | 100V | 6.8A (Tc) | 480mOhm @ 4A, 10V | 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | ±20V | HEXFET® |
| IRFZ46NSTRL | MOSFET N-CH 55V 53A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 107W (Tc) | 55V | 53A (Tc) | 16.5mOhm @ 28A, 10V | 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | ±20V | HEXFET® |
| IRF540NSTRRPBF | MOSFET N-CH 100V 33A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 130W (Tc) | 100V | 33A (Tc) | 44mOhm @ 16A, 10V | 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | ±20V | HEXFET® |
| IRL520NSTRR | MOSFET N-CH 100V 10A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 48W (Tc) | 100V | 10A (Tc) | 180mOhm @ 6A, 10V | 4V, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | ±16V | HEXFET® |
| IRFS5615PBF | MOSFET N-CH 150V 33A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 144W (Tc) | 150V | 33A (Tc) | 42mOhm @ 21A, 10V | 10V | 5V @ 100µA | 40nC @ 10V | 1750pF @ 50V | ±20V | |
| IRFZ48NSTRRPBF | MOSFET N-CH 55V 64A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 130W (Tc) | 55V | 64A (Tc) | 14mOhm @ 32A, 10V | 10V | 4V @ 250µA | 81nC @ 10V | 1970pF @ 25V | ±20V | HEXFET® |
| IRF9530NSTRR | MOSFET P-CH 100V 14A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 3.8W (Ta), 79W (Tc) | 100V | 14A (Tc) | 200mOhm @ 8.4A, 10V | 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | ±20V | HEXFET® |
| IRF3710STRLPBF | MOSFET N-CH 100V 57A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 200W (Tc) | 100V | 57A (Tc) | 23mOhm @ 28A, 10V | 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | ±20V | HEXFET® |
| IRF2204SPBF | MOSFET N-CH 40V 170A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 200W (Tc) | 40V | 170A (Tc) | 3.6mOhm @ 130A, 10V | 10V | 4V @ 250µA | 200nC @ 10V | 5890pF @ 25V | ±20V | HEXFET® |
| IRF9540NSTRRPBF | MOSFET P-CH 100V 23A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 3.1W (Ta), 110W (Tc) | 100V | 23A (Tc) | 117mOhm @ 14A, 10V | 10V | 4V @ 250µA | 110nC @ 10V | 1450pF @ 25V | ±20V | HEXFET® |
| IRL3502SPBF | MOSFET N-CH 20V 110A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 140W (Tc) | 20V | 110A (Tc) | 7mOhm @ 64A, 7V | 4.5V, 7V | 700mV @ 250µA | 110nC @ 4.5V | 4700pF @ 15V | ±10V | HEXFET® |
| IRF3711STRLPBF | MOSFET N-CH 20V 110A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.1W (Ta), 120W (Tc) | 20V | 110A (Tc) | 6mOhm @ 15A, 10V | 4.5V, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | ±20V | HEXFET® |
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