-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AUIRLS3034 | MOSFET N-CH 40V 343A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 375W (Tc) | 40V | 195A (Tc) | 1.7mOhm @ 195A, 10V | 4.5V, 10V | 2.5V @ 250µA | 162nC @ 4.5V | 10315pF @ 25V | ±20V | HEXFET® |
| IRF3704STRRPBF | MOSFET N-CH 20V 77A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 87W (Tc) | 20V | 77A (Tc) | 9mOhm @ 15A, 10V | 4.5V, 10V | 3V @ 250µA | 19nC @ 4.5V | 1996pF @ 10V | ±20V | HEXFET® |
| IRF3315STRRPBF | MOSFET N-CH 150V 21A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 94W (Tc) | 150V | 21A (Tc) | 82mOhm @ 12A, 10V | 10V | 4V @ 250µA | 95nC @ 10V | 1300pF @ 25V | ±20V | HEXFET® |
| IRF3315STRL | MOSFET N-CH 150V 21A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 94W (Tc) | 150V | 21A (Tc) | 82mOhm @ 12A, 10V | 10V | 4V @ 250µA | 95nC @ 10V | 1300pF @ 25V | ±20V | HEXFET® |
| IRF2805SPBF | MOSFET N-CH 55V 135A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 200W (Tc) | 55V | 135A (Tc) | 4.7mOhm @ 104A, 10V | 10V | 4V @ 250µA | 230nC @ 10V | 5110pF @ 25V | ±20V | HEXFET® |
| IRL1004STRRPBF | MOSFET N-CH 40V 130A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 200W (Tc) | 40V | 130A (Tc) | 6.5mOhm @ 78A, 10V | 4.5V, 10V | 1V @ 250µA | 100nC @ 4.5V | 5330pF @ 25V | ±16V | HEXFET® |
| IRFZ46NSPBF | MOSFET N-CH 55V 53A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | N-Channel | 3.8W (Ta), 107W (Tc) | 55V | 53A (Tc) | 16.5mOhm @ 28A, 10V | 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | ±20V | HEXFET® | |
| IRF3707ZSTRLPBF | MOSFET N-CH 30V 59A | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 57W (Tc) | 30V | 59A (Tc) | 9.5mOhm @ 21A, 10V | 4.5V, 10V | 2.25V @ 25µA | 15nC @ 4.5V | 1210pF @ 15V | ±20V | HEXFET®, StrongIRFET™ |
| IRL40S212 | MOSFET N-CH 40V 195A | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 231W (Tc) | 40V | 195A (Tc) | 1.9mOhm @ 100A, 10V | 4.5V, 10V | 2.4V @ 150µA | 137nC @ 4.5V | 8320pF @ 25V | ±20V | StrongIRFET™ |
| IRFZ44ESTRLPBF | MOSFET N-CH 60V 48A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 110W (Tc) | 60V | 48A (Tc) | 23mOhm @ 29A, 10V | 10V | 4V @ 250µA | 60nC @ 10V | 1360pF @ 25V | ±20V | HEXFET® |
| IRL540NSTRRPBF | MOSFET N-CH 100V 36A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | N-Channel | 3.8W (Ta), 140W (Tc) | 100V | 36A (Tc) | 44mOhm @ 18A, 10V | 4V, 10V | 2V @ 250µA | 74nC @ 5V | 1800pF @ 25V | ±16V | HEXFET® | |
| IRF200S234 | TRENCH_MOSFETS | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 417W (Tc) | 200V | 90A | 16.9mOhm @ 51A, 10V | 10V | 5V @ 250µA | 162nC @ 10V | 6484pF @ 50V | ±20V | |
| IRF4104S | MOSFET N-CH 40V 75A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 140W (Tc) | 40V | 75A (Tc) | 5.5mOhm @ 75A, 10V | 10V | 4V @ 250µA | 100nC @ 10V | 3000pF @ 25V | ±20V | HEXFET® |
| IRF5210SPBF | MOSFET P-CH 100V 38A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 3.1W (Ta), 170W (Tc) | 100V | 38A (Tc) | 60mOhm @ 38A, 10V | 10V | 4V @ 250µA | 230nC @ 10V | 2780pF @ 25V | ±20V | HEXFET® |
| IRL3714STRR | MOSFET N-CH 20V 36A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 47W (Tc) | 20V | 36A (Tc) | 20mOhm @ 18A, 10V | 4.5V, 10V | 3V @ 250µA | 9.7nC @ 4.5V | 670pF @ 10V | ±20V | HEXFET® |
- 10
- 15
- 50
- 100