• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
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    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
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List Table
Found: 697
  • AUIRLS3034
    MOSFET N-CH 40V 343A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 162nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 10315pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 375W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF3704STRRPBF
    MOSFET N-CH 20V 77A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
    • Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 87W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF3315STRRPBF
    MOSFET N-CH 150V 21A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
    • Rds On (Max) @ Id, Vgs: 82mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF3315STRL
    MOSFET N-CH 150V 21A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
    • Rds On (Max) @ Id, Vgs: 82mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF2805SPBF
    MOSFET N-CH 55V 135A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 104A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5110pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 200W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRL1004STRRPBF
    MOSFET N-CH 40V 130A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±16V
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  • IRFZ46NSPBF
    MOSFET N-CH 55V 53A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
    • Rds On (Max) @ Id, Vgs: 16.5mOhm @ 28A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1696pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF3707ZSTRLPBF
    MOSFET N-CH 30V 59A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
    • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
    • Vgs(th) (Max) @ Id: 2.25V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 57W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRL40S212
    MOSFET N-CH 40V 195A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 2.4V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 137nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 8320pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 231W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFZ44ESTRLPBF
    MOSFET N-CH 60V 48A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
    • Rds On (Max) @ Id, Vgs: 23mOhm @ 29A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 110W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRL540NSTRRPBF
    MOSFET N-CH 100V 36A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
    • Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
    • Vgs (Max): ±16V
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  • IRF200S234
    TRENCH_MOSFETS
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 90A
    • Rds On (Max) @ Id, Vgs: 16.9mOhm @ 51A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 162nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6484pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 417W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF4104S
    MOSFET N-CH 40V 75A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 140W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF5210SPBF
    MOSFET P-CH 100V 38A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
    • Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRL3714STRR
    MOSFET N-CH 20V 36A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
    • Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 47W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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