-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AUXAKF1405ZS-7P | MOSFET N-CH 55V 120A D2PAK7 | Infineon Technologies | D2PAK (7-Lead) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 230W (Tc) | 55V | 120A (Tc) | 4.9mOhm @ 88A, 10V | 10V | 4V @ 150µA | 230nC @ 10V | 5360pF @ 25V | ±20V | HEXFET® |
| AUIRF3805S-7TRL | MOSFET N-CH 55V 160A HEXFET | Infineon Technologies | D2PAK (7-Lead) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 55V | 160A (Tc) | 2.6mOhm @ 140A, 10V | 10V | 4V @ 250µA | 200nC @ 10V | 7820pF @ 25V | ±20V | HEXFET® |
| IRFS7734TRL7PP | MOSFET N-CH 75V 183A D2PAK | Infineon Technologies | D2PAK (7-Lead) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 294W (Tc) | 75V | 197A (Tc) | 3.05mOhm @ 100A, 10V | 6V, 10V | 3.7V @ 150µA | 270nC @ 10V | 10130pF @ 25V | ±20V | HEXFET®, StrongIRFET™ |
| AUIRF1324S-7P | MOSFET N-CH 24V 240A D2PAK-7 | Infineon Technologies | D2PAK (7-Lead) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | MOSFET (Metal Oxide) | N-Channel | 24V | 240A (Tc) | 1mOhm @ 160A, 10V | 4V @ 250µA | 252nC @ 10V | 7700pF @ 19V | HEXFET® | ||||
| IRF2804S-7PPBF | MOSFET N-CH 40V 160A D2PAK-7 | Infineon Technologies | D2PAK (7-Lead) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 330W (Tc) | 40V | 160A (Tc) | 1.6mOhm @ 160A, 10V | 10V | 4V @ 250µA | 260nC @ 10V | 6930pF @ 25V | ±20V | HEXFET® |
| IRFS7437-7PPBF | MOSFET N CH 40V 195A D2PAK-7PIN | Infineon Technologies | D2PAK (7-Lead) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 231W (Tc) | 40V | 195A (Tc) | 1.4mOhm @ 100A, 10V | 6V, 10V | 3.9V @ 150µA | 225nC @ 10V | 7437pF @ 25V | ±20V | HEXFET®, StrongIRFET™ |
| IRFS7430-7PPBF | MOSFET N-CH 40V 240A D2PAK | Infineon Technologies | D2PAK (7-Lead) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 375W (Tc) | 40V | 240A (Tc) | 0.75mOhm @ 100A, 10V | 6V, 10V | 3.9V @ 250µA | 460nC @ 10V | 13975pF @ 25V | ±20V | HEXFET®, StrongIRFET™ |
| IRFS3006TRL7PP | MOSFET N-CH 60V 240A D2PAK7 | Infineon Technologies | D2PAK (7-Lead) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 375W (Tc) | 60V | 240A (Tc) | 2.1mOhm @ 168A, 10V | 10V | 4V @ 250µA | 300nC @ 10V | 8850pF @ 50V | ±20V | HEXFET® |
| IRF1405ZS-7P | MOSFET N-CH 55V 120A D2PAK7 | Infineon Technologies | D2PAK (7-Lead) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 230W (Tc) | 55V | 120A (Tc) | 4.9mOhm @ 88A, 10V | 10V | 4V @ 150µA | 230nC @ 10V | 5360pF @ 25V | ±20V | HEXFET® |
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