• Package / Case
    • Тип транзистора
    • Технология
    • Рабочая температура
    • Тип канала
    • Усиление
    • Коэффициент шума
    • Рассеиваемая мощность (Макс)
    • Напряжение сток-исток (Vdss)
    • Voltage - Test
    • Current - Test
    • Непрерывный ток стока (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Пороговое напряжение затвора (Max) @ Id
    • Заряд затвора (Qg) (Max) @ Vgs
    • Входная емкость (Ciss) (Max) @ Vds
    • Напряжение затвора (макс)
    • Серия
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Списком Таблицей
Найдено: 69
Наименование Описание Производитель
Тип корпуса
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
AUIRFSA8409-7P MOSFET NCH 40V 523A D2PAK Infineon Technologies D2PAK (7-Lead) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 375W (Tc) 40V 523A (Tc) 0.69mOhm @ 100A, 10V 10V 3.9V @ 250µA 460nC @ 10V 13975pF @ 25V ±20V Automotive, AEC-Q101, HEXFET®
IRF2804STRL-7P MOSFET N-CH 40V 160A D2PAK7 Infineon Technologies D2PAK (7-Lead) Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 330W (Tc) 40V 160A (Tc) 1.6mOhm @ 160A, 10V 10V 4V @ 250µA 260nC @ 10V 6930pF @ 25V ±20V HEXFET®
AUIRFS8407-7TRL MOSFET N-CH 40V 240A D2PAK Infineon Technologies D2PAK (7-Lead) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 231W (Tc) 40V 240A (Tc) 1.3mOhm @ 100A, 10V 10V 3.9V @ 150µA 225nC @ 10V 7437pF @ 25V ±20V HEXFET®
IRF1324S-7PPBF MOSFET N-CH 24V 429A D2PAK-7 Infineon Technologies D2PAK (7-Lead) Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 300W (Tc) 24V 240A (Tc) 1mOhm @ 160A, 10V 10V 4V @ 250µA 252nC @ 10V 7700pF @ 19V ±20V HEXFET®
AUIRLS3036-7P MOSFET N-CH 60V 300A D2PAK-7P Infineon Technologies D2PAK (7-Lead) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 380W (Tc) 60V 240A (Tc) 1.9mOhm @ 180A, 10V 4.5V, 10V 2.5V @ 250µA 160nC @ 4.5V 11270pF @ 50V ±16V HEXFET®
AUIRFS8409-7P MOSFET N-CH 40V 240A D2PAK-7 Infineon Technologies D2PAK (7-Lead) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 375W (Tc) 40V 240A (Tc) 0.75mOhm @ 100A, 10V 10V 3.9V @ 250µA 460nC @ 10V 13975pF @ 25V ±20V HEXFET®
AUIRLS8409-7TRL MOSFET NCH 40V 240A D2PAK Infineon Technologies D2PAK (7-Lead) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 375W (Tc) 40V 240A (Tc) 0.75mOhm @ 100A, 10V 4.5V, 10V 2.4V @ 250µA 266nC @ 4.5V 16488pF @ 25V ±16V HEXFET®
IRLS4030-7PPBF MOSFET N-CH 100V 190A D2PAK-7 Infineon Technologies D2PAK (7-Lead) Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 370W (Tc) 100V 190A (Tc) 3.9mOhm @ 110A, 10V 4.5V, 10V 2.5V @ 250µA 140nC @ 4.5V 11490pF @ 50V ±16V HEXFET®
IRFS4115-7PPBF MOSFET N-CH 150V 105A D2PAK-7 Infineon Technologies D2PAK (7-Lead) Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 380W (Tc) 150V 105A (Tc) 11.8mOhm @ 63A, 10V 10V 5V @ 250µA 110nC @ 10V 5320pF @ 50V ±20V HEXFET®
IRFS7534TRL7PP MOSFET N CH 60V 240A D2PAK Infineon Technologies D2PAK (7-Lead) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 290W (Tc) 60V 240A (Tc) 1.95mOhm @ 100A, 10V 6V, 10V 3.7V @ 250µA 300nC @ 10V 9990pF @ 25V ±20V HEXFET®, StrongIRFET™
AUIRFS4115-7P MOSFET N-CH 150V 105A AUTO Infineon Technologies D2PAK (7-Lead) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 380W (Tc) 150V 105A (Tc) 11.8mOhm @ 63A, 10V 10V 5V @ 250µA 110nC @ 10V 5320pF @ 50V ±20V HEXFET®
IRFS3107-7PPBF MOSFET N-CH 75V 240A D2PAK-7 Infineon Technologies D2PAK (7-Lead) Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 370W (Tc) 75V 240A (Tc) 2.6mOhm @ 160A, 10V 10V 4V @ 250µA 240nC @ 10V 9200pF @ 50V ±20V HEXFET®
IRF2804STRL7PP MOSFET N-CH 40V 160A D2PAK-7 Infineon Technologies D2PAK (7-Lead) Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 330W (Tc) 40V 160A (Tc) 1.6mOhm @ 160A, 10V 10V 4V @ 250µA 260nC @ 10V 6930pF @ 25V ±20V HEXFET®
AUIRF2907ZS7PTL MOSFET N-CH 75V 180A D2PAK-7 Infineon Technologies D2PAK (7-Lead) Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 300W (Tc) 75V 180A (Tc) 3.8mOhm @ 110A, 10V 10V 4V @ 250µA 260nC @ 10V 7580pF @ 25V ±20V HEXFET®
IRF2804STRR7PP MOSFET N-CH 40V 160A D2PAK-7 Infineon Technologies D2PAK (7-Lead) Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 330W (Tc) 40V 160A (Tc) 1.6mOhm @ 160A, 10V 10V 4V @ 250µA 260nC @ 10V 6930pF @ 25V ±20V HEXFET®
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