• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 69
  • AUXAKF1405ZS-7P
    MOSFET N-CH 55V 120A D2PAK7
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
    • Supplier Device Package: D2PAK (7-Lead)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.9mOhm @ 88A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 230W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • AUIRF3805S-7TRL
    MOSFET N-CH 55V 160A HEXFET
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
    • Supplier Device Package: D2PAK (7-Lead)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 140A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7820pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFS7734TRL7PP
    MOSFET N-CH 75V 183A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
    • Supplier Device Package: D2PAK (7-Lead)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 197A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.05mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.7V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 10130pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 294W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • AUIRF1324S-7P
    MOSFET N-CH 24V 240A D2PAK-7
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
    • Supplier Device Package: D2PAK (7-Lead)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 24V
    • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
    • Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 252nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 19V
    • Technology: MOSFET (Metal Oxide)
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  • IRF2804S-7PPBF
    MOSFET N-CH 40V 160A D2PAK-7
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
    • Supplier Device Package: D2PAK (7-Lead)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.6mOhm @ 160A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6930pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 330W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFS7437-7PPBF
    MOSFET N CH 40V 195A D2PAK-7PIN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
    • Supplier Device Package: D2PAK (7-Lead)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7437pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 231W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • IRFS7430-7PPBF
    MOSFET N-CH 40V 240A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
    • Supplier Device Package: D2PAK (7-Lead)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
    • Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 13975pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 375W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • IRFS3006TRL7PP
    MOSFET N-CH 60V 240A D2PAK7
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
    • Supplier Device Package: D2PAK (7-Lead)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8850pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 375W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF1405ZS-7P
    MOSFET N-CH 55V 120A D2PAK7
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
    • Supplier Device Package: D2PAK (7-Lead)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.9mOhm @ 88A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 230W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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