• Package / Case
    • Тип транзистора
    • Технология
    • Рабочая температура
    • Тип канала
    • Усиление
    • Коэффициент шума
    • Рассеиваемая мощность (Макс)
    • Напряжение сток-исток (Vdss)
    • Voltage - Test
    • Current - Test
    • Непрерывный ток стока (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Пороговое напряжение затвора (Max) @ Id
    • Заряд затвора (Qg) (Max) @ Vgs
    • Входная емкость (Ciss) (Max) @ Vds
    • Напряжение затвора (макс)
    • Серия
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Списком Таблицей
Найдено: 83
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
IRFH5010TR2PBF MOSFET N-CH 100V 13A 5X6 PQFN Infineon Technologies 8-PQFN (5x6) Surface Mount 8-PowerVDFN MOSFET (Metal Oxide) N-Channel 100V 13A (Ta), 100A (Tc) 9mOhm @ 50A, 10V 4V @ 150µA 98nC @ 10V 4340pF @ 25V HEXFET®
IRFH5110TR2PBF MOSFET N-CH 100V 5X6 PQFN Infineon Technologies 8-PQFN (5x6) Surface Mount 8-PowerVDFN MOSFET (Metal Oxide) N-Channel 100V 11A (Ta), 63A (Tc) 12.4mOhm @ 37A, 10V 4V @ 100µA 72nC @ 10V 3152pF @ 25V HEXFET®
IRFH5025TRPBF MOSFET N-CH 250V 3.8A PQFN56 Infineon Technologies 8-PQFN (5x6) Surface Mount 8-PowerVDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 3.6W (Ta), 8.3W (Tc) 250V 3.8A (Ta) 100mOhm @ 5.7A, 10V 10V 5V @ 150µA 56nC @ 10V 2150pF @ 50V ±20V HEXFET®
IRFH8307TRPBF MOSFET N-CH 30V 100A PQFN Infineon Technologies 8-PQFN (5x6) Surface Mount 8-PowerTDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 3.6W (Ta), 156W (Tc) 30V 42A (Ta), 100A (Tc) 1.3mOhm @ 50A, 10V 4.5V, 10V 2.35V @ 150µA 120nC @ 10V 7200pF @ 15V ±20V HEXFET®, StrongIRFET™
IRFH7110TRPBF MOSFET N CH 100V 11A PQFN 5X6 Infineon Technologies 8-PQFN (5x6) Surface Mount 8-TQFN Exposed Pad MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 3.6W (Ta), 104W (Tc) 100V 11A (Ta), 58A (Tc) 13.5mOhm @ 35A, 10V 10V 4V @ 100µA 87nC @ 10V 3240pF @ 25V ±20V HEXFET®
IRFH5004TRPBF MOSFET N-CH 40V 28A 8VQFN Infineon Technologies 8-PQFN (5x6) Surface Mount 8-PowerVDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 3.6W (Ta), 156W (Tc) 40V 28A (Ta), 100A (Tc) 2.6mOhm @ 50A, 10V 10V 4V @ 150µA 110nC @ 10V 4490pF @ 20V ±20V HEXFET®
IRF40H210 MOSFET N-CH 40V 100A PQFN5X6 Infineon Technologies 8-PQFN (5x6) Surface Mount 8-PowerVDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 125W (Tc) 40V 100A (Tc) 1.7mOhm @ 100A, 10V 6V, 10V 3.7V @ 150µA 152nC @ 10V 5406pF @ 25V ±20V HEXFET®, StrongIRFET™
IRFH5007TRPBF MOSFET N-CH 75V 17A 5X6 PQFN Infineon Technologies 8-PQFN (5x6) Surface Mount 8-PowerTDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 3.6W (Ta), 156W (Tc) 75V 17A (Ta), 100A (Tc) 5.9mOhm @ 50A, 10V 10V 4V @ 150µA 98nC @ 10V 4290pF @ 25V ±20V HEXFET®
IRFH5250DTR2PBF MOSFET N-CH 25V 40A 8VQFN Infineon Technologies 8-PQFN (5x6) Surface Mount 8-PowerVDFN MOSFET (Metal Oxide) N-Channel 25V 40A (Ta), 100A (Tc) 1.4mOhm @ 50A, 10V 2.35V @ 150µA 83nC @ 10V 6115pF @ 13V HEXFET®
IRLH7134TRPBF MOSFET N-CH 40V 26A 8PQFN Infineon Technologies 8-PQFN (5x6) Surface Mount 8-PowerTDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 3.6W (Ta), 104W (Tc) 40V 26A (Ta), 85A (Tc) 3.3mOhm @ 50A, 10V 4.5V, 10V 2.5V @ 100µA 58nC @ 4.5V 3720pF @ 25V ±16V HEXFET®
IRFH7084TRPBF MOSFET N-CH 40V 100A PQFN Infineon Technologies 8-PQFN (5x6) Surface Mount 8-PowerTDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 156W (Tc) 40V 100A (Tc) 1.25mOhm @ 100A, 10V 10V 3.9V @ 150µA 190nC @ 10V 6560pF @ 25V ±20V HEXFET®
IRLH5030TRPBF MOSFET N-CH 100V 13A 8PQFN Infineon Technologies 8-PQFN (5x6) Surface Mount 8-PowerVDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 3.6W (Ta), 156W (Tc) 100V 13A (Ta), 100A (Tc) 9mOhm @ 50A, 10V 4.5V, 10V 2.5V @ 150µA 94nC @ 10V 5185pF @ 50V ±16V HEXFET®
IRFH7004TR2PBF MOSFET N CH 40V 100A PQFN5X6 Infineon Technologies 8-PQFN (5x6) Surface Mount 8-VQFN Exposed Pad MOSFET (Metal Oxide) N-Channel 40V 100A (Tc) 1.4mOhm @ 100A, 10V 3.9V @ 150µA 194nC @ 10V 6419pF @ 25V HEXFET®, StrongIRFET™
IRFH5106TRPBF MOSFET N-CH 60V 21A 8-PQFN Infineon Technologies 8-PQFN (5x6) Surface Mount 8-PowerVDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 3.6W (Ta), 114W (Tc) 60V 21A (Ta), 100A (Tc) 5.6mOhm @ 50A, 10V 10V 4V @ 250µA 75nC @ 10V 3090pF @ 25V ±20V HEXFET®
AUXFN8403TR MOSFET N-CH 40V PQFN Infineon Technologies 8-PQFN (5x6) Surface Mount 8-TQFN Exposed Pad MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 94W (Tc) 40V 95A (Tc) 3.3mOhm @ 50A, 10V 10V 3.9V @ 100µA 98nC @ 10V 3174pF @ 25V ±20V HEXFET®
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