-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFH5010TR2PBF | MOSFET N-CH 100V 13A 5X6 PQFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | N-Channel | 100V | 13A (Ta), 100A (Tc) | 9mOhm @ 50A, 10V | 4V @ 150µA | 98nC @ 10V | 4340pF @ 25V | HEXFET® | ||||||
| IRFH5110TR2PBF | MOSFET N-CH 100V 5X6 PQFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | N-Channel | 100V | 11A (Ta), 63A (Tc) | 12.4mOhm @ 37A, 10V | 4V @ 100µA | 72nC @ 10V | 3152pF @ 25V | HEXFET® | ||||||
| IRFH5025TRPBF | MOSFET N-CH 250V 3.8A PQFN56 | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.6W (Ta), 8.3W (Tc) | 250V | 3.8A (Ta) | 100mOhm @ 5.7A, 10V | 10V | 5V @ 150µA | 56nC @ 10V | 2150pF @ 50V | ±20V | HEXFET® | ||
| IRFH8307TRPBF | MOSFET N-CH 30V 100A PQFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.6W (Ta), 156W (Tc) | 30V | 42A (Ta), 100A (Tc) | 1.3mOhm @ 50A, 10V | 4.5V, 10V | 2.35V @ 150µA | 120nC @ 10V | 7200pF @ 15V | ±20V | HEXFET®, StrongIRFET™ | ||
| IRFH7110TRPBF | MOSFET N CH 100V 11A PQFN 5X6 | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-TQFN Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.6W (Ta), 104W (Tc) | 100V | 11A (Ta), 58A (Tc) | 13.5mOhm @ 35A, 10V | 10V | 4V @ 100µA | 87nC @ 10V | 3240pF @ 25V | ±20V | HEXFET® | ||
| IRFH5004TRPBF | MOSFET N-CH 40V 28A 8VQFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.6W (Ta), 156W (Tc) | 40V | 28A (Ta), 100A (Tc) | 2.6mOhm @ 50A, 10V | 10V | 4V @ 150µA | 110nC @ 10V | 4490pF @ 20V | ±20V | HEXFET® | ||
| IRF40H210 | MOSFET N-CH 40V 100A PQFN5X6 | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 125W (Tc) | 40V | 100A (Tc) | 1.7mOhm @ 100A, 10V | 6V, 10V | 3.7V @ 150µA | 152nC @ 10V | 5406pF @ 25V | ±20V | HEXFET®, StrongIRFET™ | ||
| IRFH5007TRPBF | MOSFET N-CH 75V 17A 5X6 PQFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.6W (Ta), 156W (Tc) | 75V | 17A (Ta), 100A (Tc) | 5.9mOhm @ 50A, 10V | 10V | 4V @ 150µA | 98nC @ 10V | 4290pF @ 25V | ±20V | HEXFET® | ||
| IRFH5250DTR2PBF | MOSFET N-CH 25V 40A 8VQFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | N-Channel | 25V | 40A (Ta), 100A (Tc) | 1.4mOhm @ 50A, 10V | 2.35V @ 150µA | 83nC @ 10V | 6115pF @ 13V | HEXFET® | ||||||
| IRLH7134TRPBF | MOSFET N-CH 40V 26A 8PQFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.6W (Ta), 104W (Tc) | 40V | 26A (Ta), 85A (Tc) | 3.3mOhm @ 50A, 10V | 4.5V, 10V | 2.5V @ 100µA | 58nC @ 4.5V | 3720pF @ 25V | ±16V | HEXFET® | ||
| IRFH7084TRPBF | MOSFET N-CH 40V 100A PQFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 156W (Tc) | 40V | 100A (Tc) | 1.25mOhm @ 100A, 10V | 10V | 3.9V @ 150µA | 190nC @ 10V | 6560pF @ 25V | ±20V | HEXFET® | ||
| IRLH5030TRPBF | MOSFET N-CH 100V 13A 8PQFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.6W (Ta), 156W (Tc) | 100V | 13A (Ta), 100A (Tc) | 9mOhm @ 50A, 10V | 4.5V, 10V | 2.5V @ 150µA | 94nC @ 10V | 5185pF @ 50V | ±16V | HEXFET® | ||
| IRFH7004TR2PBF | MOSFET N CH 40V 100A PQFN5X6 | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-VQFN Exposed Pad | MOSFET (Metal Oxide) | N-Channel | 40V | 100A (Tc) | 1.4mOhm @ 100A, 10V | 3.9V @ 150µA | 194nC @ 10V | 6419pF @ 25V | HEXFET®, StrongIRFET™ | ||||||
| IRFH5106TRPBF | MOSFET N-CH 60V 21A 8-PQFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.6W (Ta), 114W (Tc) | 60V | 21A (Ta), 100A (Tc) | 5.6mOhm @ 50A, 10V | 10V | 4V @ 250µA | 75nC @ 10V | 3090pF @ 25V | ±20V | HEXFET® | ||
| AUXFN8403TR | MOSFET N-CH 40V PQFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-TQFN Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 94W (Tc) | 40V | 95A (Tc) | 3.3mOhm @ 50A, 10V | 10V | 3.9V @ 100µA | 98nC @ 10V | 3174pF @ 25V | ±20V | HEXFET® |
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