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- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
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Тип корпуса
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Мощность - Макс.
|
Вид монтажа
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Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
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IRFH5304TR2PBF | MOSFET N-CH 30V 22A 8VQFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | N-Channel | 30V | 22A (Ta), 79A (Tc) | 4.5mOhm @ 47A, 10V | 2.35V @ 50µA | 41nC @ 10V | 2360pF @ 10V | HEXFET® | ||||||
IRFH5010TRPBF | MOSFET N-CH 100V 13A 8-PQFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.6W (Ta), 250W (Tc) | 100V | 13A (Ta), 100A (Tc) | 9mOhm @ 50A, 10V | 10V | 4V @ 150µA | 98nC @ 10V | 4340pF @ 25V | ±20V | HEXFET® | ||
IRFH7914TR2PBF | MOSFET N-CH 30V 15A PQFN56 | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | N-Channel | 30V | 15A (Ta), 35A (Tc) | 8.7mOhm @ 14A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1160pF @ 15V | HEXFET® | ||||||
IRFH7187TRPBF | MOSFET N-CH 100V 18A | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.8W (Ta), 132W (Tc) | 100V | 18A (Ta), 105A (Tc) | 6mOhm @ 50A, 10V | 10V | 3.6V @ 150µA | 50nC @ 10V | 2116pF @ 50V | ±20V | FASTIRFET™, HEXFET® | ||
IRFH5110TRPBF | MOSFET N-CH 100V 11A 8-PQFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.6W (Ta), 114W (Tc) | 100V | 11A (Ta), 63A (Tc) | 12.4mOhm @ 37A, 10V | 10V | 4V @ 100µA | 72nC @ 10V | 3152pF @ 25V | ±20V | HEXFET® | ||
IRFH7107TRPBF | MOSFET N-CH 75V 14A 8PQFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.6W (Ta), 104W (Tc) | 75V | 14A (Ta), 75A (Tc) | 8.5mOhm @ 45A, 10V | 10V | 4V @ 100µA | 72nC @ 10V | 3110pF @ 25V | ±20V | HEXFET® | ||
IRFH5303TR2PBF | MOSFET N-CH 30V 82A 5X6 PQFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.6W (Ta), 46W (Tc) | 30V | 23A (Ta), 82A (Tc) | 4.2mOhm @ 49A, 10V | 4.5V, 10V | 2.35V @ 50µA | 41nC @ 10V | 2190pF @ 15V | ±20V | HEXFET® | ||
IRLH6224TR2PBF | MOSFET N CH 20V 28A PQFN 5X6 MM | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | N-Channel | 20V | 28A (Ta), 105A (Tc) | 3mOhm @ 20A, 4.5V | 1.1V @ 50µA | 86nC @ 10V | 3710pF @ 10V | HEXFET® | ||||||
IRFH5255TRPBF | MOSFET N-CH 25V 15A 8VQFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.6W (Ta), 26W (Tc) | 25V | 15A (Ta), 51A (Tc) | 6mOhm @ 15A, 10V | 4.5V, 10V | 2.35V @ 25µA | 14.5nC @ 10V | 988pF @ 13V | ±20V | HEXFET® | ||
IRFH7185TRPBF | MOSFET N CH 100V 19A 8QFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.6W (Ta), 160W (Tc) | 100V | 19A (Ta) | 5.2mOhm @ 50A, 10V | 10V | 3.6V @ 150µA | 54nC @ 10V | 2320pF @ 50V | ±20V | FASTIRFET™, HEXFET® | ||
IRLH5036TR2PBF | MOSFET N-CH 60V 100A 5X6 PQFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | N-Channel | 60V | 20A (Ta), 100A (Tc) | 4.4mOhm @ 50A, 10V | 2.5V @ 150µA | 90nC @ 10V | 5360pF @ 25V | HEXFET® | ||||||
IRFH5007TR2PBF | MOSFET N-CH 75V 17A 5X6 PQFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | N-Channel | 75V | 17A (Ta), 100A (Tc) | 5.9mOhm @ 50A, 10V | 4V @ 150µA | 98nC @ 10V | 4290pF @ 25V | HEXFET® | ||||||
IRFH5210TRPBF | MOSFET N-CH 100V 10A 8-PQFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.6W (Ta), 104W (Tc) | 100V | 10A (Ta), 55A (Tc) | 14.9mOhm @ 33A, 10V | 10V | 4V @ 100µA | 59nC @ 10V | 2570pF @ 25V | ±20V | HEXFET® | ||
IRLH5034TRPBF | MOSFET N-CH 40V 100A 8-PQFN | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.6W (Ta), 156W (Tc) | 40V | 29A (Ta), 100A (Tc) | 2.4mOhm @ 50A, 10V | 4.5V, 10V | 2.5V @ 150µA | 82nC @ 10V | 4730pF @ 25V | ±16V | HEXFET® | ||
IRFH7936TR2PBF | MOSFET N-CH 30V 20A PQFN56 | Infineon Technologies | 8-PQFN (5x6) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | N-Channel | 30V | 20A (Ta), 54A (Tc) | 4.8mOhm @ 20A, 10V | 2.35V @ 50µA | 26nC @ 4.5V | 2360pF @ 15V | HEXFET® |
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