• Производитель
  • Тип корпуса
  • Выходная мощность
  • Номинальное напряжение
    • Package / Case
    • Тип транзистора
    • Технология
    • Рабочая температура
    • Тип канала
    • Усиление
    • Коэффициент шума
    • Рассеиваемая мощность (Макс)
    • Напряжение сток-исток (Vdss)
    • Voltage - Test
    • Current - Test
    • Непрерывный ток стока (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Пороговое напряжение затвора (Max) @ Id
    • Заряд затвора (Qg) (Max) @ Vgs
    • Входная емкость (Ciss) (Max) @ Vds
    • Напряжение затвора (макс)
    • Серия
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Списком Таблицей
Найдено: 74
Наименование Описание Производитель
Тип корпуса
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
EPC2104 GAN TRANS SYMMETRICAL HALF BRIDG EPC Die Surface Mount Die -40°C ~ 150°C (TJ) 2 N-Channel (Half Bridge) 100V 23A GaNFET (Gallium Nitride) 6.3mOhm @ 20A, 5V 2.5V @ 5.5mA 7nC @ 5V 800pF @ 50V eGaN®
EPC2110ENGRT GAN TRANS 2N-CH 120V BUMPED DIE EPC Die Surface Mount Die -40°C ~ 150°C (TJ) 2 N-Channel (Dual) Common Source 120V 3.4A GaNFET (Gallium Nitride) 60mOhm @ 4A, 5V 2.5V @ 700µA 0.8nC @ 5V 80pF @ 60V eGaN®
EPC2030 GANFET NCH 40V 31A DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 40V 31A (Ta) 2.4mOhm @ 30A, 5V 2.5V @ 16mA 18nC @ 5V 1900pF @ 20V eGaN®
EPC2036 GANFET TRANS 100V 1A BUMPED DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 100V 1.7A (Ta) 65mOhm @ 1A, 5V 5V 2.5V @ 600µA 0.91nC @ 5V 90pF @ 50V +6V, -4V eGaN®
EPC8002 GANFET TRANS 65V 2.7A BUMPED DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 65V 2A (Ta) 530mOhm @ 500mA, 5V 5V 2.5V @ 250µA 21pF @ 32.5V +6V, -4V eGaN®
EPC2012C GANFET TRANS 200V 5A BUMPED DIE EPC Die Outline (4-Solder Bar) Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 200V 5A (Ta) 100mOhm @ 3A, 5V 5V 2.5V @ 1mA 1.3nC @ 5V 140pF @ 100V +6V, -4V eGaN®
EPC2103 GAN TRANS SYMMETRICAL HALF BRIDG EPC Die Surface Mount Die -40°C ~ 150°C (TJ) 2 N-Channel (Half Bridge) 80V 28A GaNFET (Gallium Nitride) 5.5mOhm @ 20A, 5V 2.5V @ 7mA 6.5nC @ 5V 760pF @ 40V eGaN®
EPC2102 GAN TRANS SYMMETRICAL HALF BRIDG EPC Die Surface Mount Die -40°C ~ 150°C (TJ) 2 N-Channel (Half Bridge) 60V 23A GaNFET (Gallium Nitride) 4.4mOhm @ 20A, 5V 2.5V @ 7mA 6.8nC @ 5V 830pF @ 30V eGaN®
EPC2050 TRANS GAN BUMPED DIE EPC
EPC2039 GANFET TRANS 80V BUMPED DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 80V 6.8A (Ta) 25mOhm @ 6A, 5V 5V 2.5V @ 2mA 2.4nC @ 5V 210pF @ 40V +6V, -4V eGaN®
EPC2010 GANFET TRANS 200V 12A BUMPED DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 125°C (TJ) N-Channel 200V 12A (Ta) 25mOhm @ 6A, 5V 5V 2.5V @ 3mA 7.5nC @ 5V 540pF @ 100V +6V, -4V eGaN®
EPC2023 GANFET TRANS 30V 60A BUMPED DIE EPC Die Surface Mount Die GaNFET (Gallium Nitride) N-Channel 30V 60A (Ta) 1.3mOhm @ 40A, 5V 2.5V @ 20mA 2300pF @ 15V eGaN®
EPC2101ENGRT GAN TRANS ASYMMETRICAL HALF BRID EPC Die Surface Mount Die -40°C ~ 150°C (TJ) 2 N-Channel (Half Bridge) 60V 9.5A, 38A GaNFET (Gallium Nitride) 11.5mOhm @ 20A, 5V 2.5V @ 2mA 2.7nC @ 5V 300pF @ 30V eGaN®
EPC2001C GANFET TRANS 100V 36A BUMPED DIE EPC Die Outline (11-Solder Bar) Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 100V 36A (Ta) 7mOhm @ 25A, 5V 5V 2.5V @ 5mA 9nC @ 5V 900pF @ 50V +6V, -4V eGaN®
EPC2103ENGRT GANFET TRANS SYM HALF BRDG 80V EPC Die Surface Mount Die 2 N-Channel (Half Bridge) 80V 23A GaNFET (Gallium Nitride) 5.5mOhm @ 20A, 5V 2.5V @ 7mA 6.5nC @ 5V 7600pF @ 40V eGaN®
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