- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EPC2212 | AEC-Q101 GAN FET 100V 13.5 MOHM | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 100V | 18A (Ta) | 13.5mOhm @ 11A, 5V | 5V | 2.5V @ 3mA | 4nC @ 5V | 407pF @ 50V | +6V, -4V | eGaN® | |
| EPC8004 | GANFET TRANS 40V 2.7A BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 40V | 2.7A (Ta) | 110mOhm @ 500mA, 5V | 5V | 2.5V @ 250µA | 0.45nC @ 5V | 52pF @ 20V | +6V, -4V | eGaN® | |
| EPC2040 | GANFET NCH 15V 3.4A DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 15V | 3.4A (Ta) | 30mOhm @ 1.5A, 5V | 5V | 2.5V @ 1mA | 0.93nC @ 5V | 105pF @ 6V | eGaN® | ||
| EPC2100ENGRT | GANFET 2 N-CH 30V 9.5A/38A DIE | EPC | Die | Surface Mount | Die | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 30V | 10A (Ta), 40A (Ta) | GaNFET (Gallium Nitride) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | eGaN® | |||
| EPC2206 | GANFET N-CH 80V 90A DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 80V | 90A (Ta) | 2.2mOhm @ 29A, 5V | 5V | 2.5V @ 13mA | 19nC @ 5V | 1940pF @ 40V | +6V, -4V | eGaN® | |
| EPC2032 | GANFET TRANS 100V 48A BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 100V | 48A (Ta) | 4mOhm @ 30A, 5V | 5V | 2.5V @ 11mA | 15nC @ 5V | 1530pF @ 50V | +6V, -4V | eGaN® | |
| EPC2016 | GANFET TRANS 100V 11A BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | N-Channel | 100V | 11A (Ta) | 16mOhm @ 11A, 5V | 5V | 2.5V @ 3mA | 5.2nC @ 5V | 520pF @ 50V | +6V, -5V | eGaN® | |
| EPC2052 | TRANS GAN 100V DIE 16MOHM | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 100V | 8.2A (Ta) | 13.5mOhm @ 11A, 5V | 5V | 2.5V @ 3mA | 4.5nC @ 5V | 575pF @ 50V | +6V, -4V | ||
| EPC2104ENGRT | GANFET 2NCH 100V 23A DIE | EPC | Die | Surface Mount | Die | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 100V | 23A | GaNFET (Gallium Nitride) | 6.3mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | eGaN® | |||
| EPC2221 | TRANS GAN DUAL 100V.11OHM 9BMPD | EPC | Die | Surface Mount | Die | 150°C (TJ) | 2 N-Channel (Dual) Common Source | 100V | 5A | GaNFET (Gallium Nitride) | ||||||||
| EPC2015C | GANFET TRANS 40V 33A BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 40V | 53A (Ta) | 4mOhm @ 33A, 5V | 5V | 2.5V @ 9mA | 8.7nC @ 5V | 1180pF @ 20V | +6V, -4V | eGaN® | |
| EPC2030ENGRT | GANFET NCH 40V 31A DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 40V | 31A (Ta) | 2.4mOhm @ 30A, 5V | 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | +6V, -4V | eGaN® | |
| EPC2107 | GANFET 3 N-CH 100V 9BGA | EPC | 9-BGA (1.35x1.35) | Surface Mount | 9-VFBGA | -40°C ~ 150°C (TJ) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | 100V | 1.7A, 500mA | GaNFET (Gallium Nitride) | 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.16nC @ 5V, 0.044nC @ 5V | 16pF @ 50V, 7pF @ 50V | eGaN® | |||
| EPC2019 | GAN TRANS 200V 8.5A BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 200V | 8.5A (Ta) | 50mOhm @ 7A, 5V | 5V | 2.5V @ 1.5mA | 2.5nC @ 5V | 270pF @ 100V | +6V, -4V | eGaN® | |
| EPC2021ENGR | TRANS GAN 80V 60A BUMPED DIE | EPC | Die | Surface Mount | Die | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | N-Channel | 80V | 60A (Ta) | 2.5mOhm @ 29A, 5V | 5V | 2.5V @ 14mA | 15nC @ 5V | 1700pF @ 40V | +6V, -4V | eGaN® |
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