• Производитель
  • Тип корпуса
  • Выходная мощность
  • Номинальное напряжение
Найдено: 407
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Выходная мощность
Вид монтажа
Частота
Номинальное напряжение
Номинальный ток
Package / Case
Тип транзистора
Технология
Рабочая температура
Тип канала
Усиление
Коэффициент шума
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Voltage - Test
Current - Test
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
C2M0160120D MOSFET N-CH 1200V 19A TO-247 Cree/Wolfspeed TO-247-3 Through Hole TO-247-3 SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 125W (Tc) 1200V 19A (Tc) 196mOhm @ 10A, 20V 20V 2.5V @ 500µA 32.6nC @ 20V 527pF @ 800V +25V, -10V Z-FET™
C3M0032120D 1200V, 32 MOHM, G3 SIC MOSFET Cree/Wolfspeed TO-247-3 Through Hole TO-247-3 SiCFET (Silicon Carbide) -40°C ~ 175°C (TJ) N-Channel 283W (Tc) 1200V 63A (Tc) 43mOhm @ 40A, 15V 15V 3.6V @ 11.5mA 114nC @ 15V 3357pF @ 1000V +15V, -4V C3M™
C2M0045170D MOSFET NCH 1.7KV 72A TO247 Cree/Wolfspeed TO-247-3 Through Hole TO-247-3 SiCFET (Silicon Carbide) -40°C ~ 150°C (TJ) N-Channel 520W (Tc) 1700V 72A (Tc) 70mOhm @ 50A, 20V 20V 4V @ 18mA 188nC @ 20V 3672pF @ 1kV +25V, -10V C2M™
C2M1000170J MOSFET N-CH 1700V 5.3A TO247 Cree/Wolfspeed D2PAK (7-Lead) Surface Mount TO-263-7 (Straight Leads) SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 78W (Tc) 1700V 5.3A (Tc) 1.4Ohm @ 2A, 20V 20V 3.1V @ 500µA (Typ) 13nC @ 20V 200pF @ 1000V +25V, -10V C2M™
CMF20120D MOSFET N-CH 1200V 42A TO-247-3 Cree/Wolfspeed TO-247-3 Through Hole TO-247-3 SiCFET (Silicon Carbide) -55°C ~ 135°C (TJ) N-Channel 215W (Tc) 1200V 42A (Tc) 110mOhm @ 20A, 20V 20V 4V @ 1mA 90.8nC @ 20V 1915pF @ 800V +25V, -5V Z-FET™
C3M0065090D MOSFET N-CH 900V 36A TO247-3 Cree/Wolfspeed TO-247-3 Through Hole TO-247-3 SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 125W (Tc) 900V 36A (Tc) 78mOhm @ 20A, 15V 15V 2.1V @ 5mA 30.4nC @ 15V 660pF @ 600V +18V, -8V C3M™
CCS050M12CM2 MOSFET 6N-CH 1200V 87A MODULE Cree/Wolfspeed Module 337W Chassis Mount Module 150°C (TJ) 6 N-Channel (3-Phase Bridge) 1200V (1.2kV) 87A (Tc) Silicon Carbide (SiC) 34mOhm @ 50A, 20V 2.3V @ 2.5mA 180nC @ 20V 2.810nF @ 800V Z-FET™ Z-Rec™
C3M0065090J MOSFET N-CH 900V 35A D2PAK-7 Cree/Wolfspeed D2PAK-7 Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 113W (Tc) 900V 35A (Tc) 78mOhm @ 20A, 15V 15V 2.1V @ 5mA 30nC @ 15V 660pF @ 600V +19V, -8V C3M™
C3M0016120D 1200V, 16 MOHM, G3 SIC MOSFET Cree/Wolfspeed TO-247-3 Through Hole TO-247-3 SiCFET (Silicon Carbide) -40°C ~ 175°C (TJ) N-Channel 556W (Tc) 1200V 115A (Tc) 22.3mOhm @ 75A, 15V 15V 3.6V @ 23mA 207nC @ 15V 6085pF @ 1000V +15V, -4V C3M™
C3M0120090J MOSFET N-CH 900V 22A Cree/Wolfspeed D2PAK-7 Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 83W (Tc) 900V 22A (Tc) 155mOhm @ 15A, 15V 15V 3.5V @ 3mA 17.3nC @ 15V 350pF @ 600V +18V, -8V C3M™
C3M0065100J-TR 1000V, 65 MOHM, G3 SIC MOSFET Cree/Wolfspeed TO-263-7 Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 113.5W (Tc) 1000V 35A (Tc) 78mOhm @ 20A, 15V 15V 3.5V @ 5mA 35nC @ 15V 660pF @ 600V +15V, -4V C3M™
C3M0075120J MOSFET N-CH 1200V 30A D2PAK-7 Cree/Wolfspeed D2PAK-7 Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 113.6W (Tc) 1200V 30A (Tc) 90mOhm @ 20A, 15V 15V 4V @ 5mA 51nC @ 15V 1350pF @ 1000V +19V, -8V C3M™
C3M0120090J-TR MOSFET N-CH 900V 22A Cree/Wolfspeed D2PAK-7 Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 83W (Tc) 900V 22A (Tc) 155mOhm @ 15A, 15V 15V 3.5V @ 3mA 17.3nC @ 15V 350pF @ 600V +18V, -8V C3M™
CMF10120D MOSFET N-CH 1200V 24A TO247 Cree/Wolfspeed TO-247 Through Hole TO-247-3 SiCFET (Silicon Carbide) -55°C ~ 135°C (TJ) N-Channel 134W (Tc) 1200V 24A (Tc) 220mOhm @ 10A, 20V 20V 4V @ 500µA 47.1nC @ 20V 928pF @ 800V +25V, -5V Z-FET™
C2M0025120D MOSFET N-CH 1200V 90A TO-247 Cree/Wolfspeed TO-247-3 Through Hole TO-247-3 SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 463W (Tc) 1200V 90A (Tc) 34mOhm @ 50A, 20V 20V 2.4V @ 10mA 161nC @ 20V 2788pF @ 1000V +25V, -10V Z-FET™