- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Коэффициент шума
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| C2M0160120D | MOSFET N-CH 1200V 19A TO-247 | Cree/Wolfspeed | TO-247-3 | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 125W (Tc) | 1200V | 19A (Tc) | 196mOhm @ 10A, 20V | 20V | 2.5V @ 500µA | 32.6nC @ 20V | 527pF @ 800V | +25V, -10V | Z-FET™ | |||||||||||
| C3M0032120D | 1200V, 32 MOHM, G3 SIC MOSFET | Cree/Wolfspeed | TO-247-3 | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -40°C ~ 175°C (TJ) | N-Channel | 283W (Tc) | 1200V | 63A (Tc) | 43mOhm @ 40A, 15V | 15V | 3.6V @ 11.5mA | 114nC @ 15V | 3357pF @ 1000V | +15V, -4V | C3M™ | |||||||||||
| C2M0045170D | MOSFET NCH 1.7KV 72A TO247 | Cree/Wolfspeed | TO-247-3 | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -40°C ~ 150°C (TJ) | N-Channel | 520W (Tc) | 1700V | 72A (Tc) | 70mOhm @ 50A, 20V | 20V | 4V @ 18mA | 188nC @ 20V | 3672pF @ 1kV | +25V, -10V | C2M™ | |||||||||||
| C2M1000170J | MOSFET N-CH 1700V 5.3A TO247 | Cree/Wolfspeed | D2PAK (7-Lead) | Surface Mount | TO-263-7 (Straight Leads) | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 78W (Tc) | 1700V | 5.3A (Tc) | 1.4Ohm @ 2A, 20V | 20V | 3.1V @ 500µA (Typ) | 13nC @ 20V | 200pF @ 1000V | +25V, -10V | C2M™ | |||||||||||
| CMF20120D | MOSFET N-CH 1200V 42A TO-247-3 | Cree/Wolfspeed | TO-247-3 | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -55°C ~ 135°C (TJ) | N-Channel | 215W (Tc) | 1200V | 42A (Tc) | 110mOhm @ 20A, 20V | 20V | 4V @ 1mA | 90.8nC @ 20V | 1915pF @ 800V | +25V, -5V | Z-FET™ | |||||||||||
| C3M0065090D | MOSFET N-CH 900V 36A TO247-3 | Cree/Wolfspeed | TO-247-3 | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 125W (Tc) | 900V | 36A (Tc) | 78mOhm @ 20A, 15V | 15V | 2.1V @ 5mA | 30.4nC @ 15V | 660pF @ 600V | +18V, -8V | C3M™ | |||||||||||
| CCS050M12CM2 | MOSFET 6N-CH 1200V 87A MODULE | Cree/Wolfspeed | Module | 337W | Chassis Mount | Module | 150°C (TJ) | 6 N-Channel (3-Phase Bridge) | 1200V (1.2kV) | 87A (Tc) | Silicon Carbide (SiC) | 34mOhm @ 50A, 20V | 2.3V @ 2.5mA | 180nC @ 20V | 2.810nF @ 800V | Z-FET™ Z-Rec™ | |||||||||||||
| C3M0065090J | MOSFET N-CH 900V 35A D2PAK-7 | Cree/Wolfspeed | D2PAK-7 | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 113W (Tc) | 900V | 35A (Tc) | 78mOhm @ 20A, 15V | 15V | 2.1V @ 5mA | 30nC @ 15V | 660pF @ 600V | +19V, -8V | C3M™ | |||||||||||
| C3M0016120D | 1200V, 16 MOHM, G3 SIC MOSFET | Cree/Wolfspeed | TO-247-3 | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -40°C ~ 175°C (TJ) | N-Channel | 556W (Tc) | 1200V | 115A (Tc) | 22.3mOhm @ 75A, 15V | 15V | 3.6V @ 23mA | 207nC @ 15V | 6085pF @ 1000V | +15V, -4V | C3M™ | |||||||||||
| C3M0120090J | MOSFET N-CH 900V 22A | Cree/Wolfspeed | D2PAK-7 | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 83W (Tc) | 900V | 22A (Tc) | 155mOhm @ 15A, 15V | 15V | 3.5V @ 3mA | 17.3nC @ 15V | 350pF @ 600V | +18V, -8V | C3M™ | |||||||||||
| C3M0065100J-TR | 1000V, 65 MOHM, G3 SIC MOSFET | Cree/Wolfspeed | TO-263-7 | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 113.5W (Tc) | 1000V | 35A (Tc) | 78mOhm @ 20A, 15V | 15V | 3.5V @ 5mA | 35nC @ 15V | 660pF @ 600V | +15V, -4V | C3M™ | |||||||||||
| C3M0075120J | MOSFET N-CH 1200V 30A D2PAK-7 | Cree/Wolfspeed | D2PAK-7 | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 113.6W (Tc) | 1200V | 30A (Tc) | 90mOhm @ 20A, 15V | 15V | 4V @ 5mA | 51nC @ 15V | 1350pF @ 1000V | +19V, -8V | C3M™ | |||||||||||
| C3M0120090J-TR | MOSFET N-CH 900V 22A | Cree/Wolfspeed | D2PAK-7 | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 83W (Tc) | 900V | 22A (Tc) | 155mOhm @ 15A, 15V | 15V | 3.5V @ 3mA | 17.3nC @ 15V | 350pF @ 600V | +18V, -8V | C3M™ | |||||||||||
| CMF10120D | MOSFET N-CH 1200V 24A TO247 | Cree/Wolfspeed | TO-247 | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -55°C ~ 135°C (TJ) | N-Channel | 134W (Tc) | 1200V | 24A (Tc) | 220mOhm @ 10A, 20V | 20V | 4V @ 500µA | 47.1nC @ 20V | 928pF @ 800V | +25V, -5V | Z-FET™ | |||||||||||
| C2M0025120D | MOSFET N-CH 1200V 90A TO-247 | Cree/Wolfspeed | TO-247-3 | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 463W (Tc) | 1200V | 90A (Tc) | 34mOhm @ 50A, 20V | 20V | 2.4V @ 10mA | 161nC @ 20V | 2788pF @ 1000V | +25V, -10V | Z-FET™ |
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