- Производитель
- Ток коллектора (макс)
- Граничное напряжение КЭ(макс)
- Тип транзистора
- Тип корпуса
-
- Напряжение насыщения (макс) @ Ib, Ic
- Обратный ток коллектора
- Усиление по току (hFE)
- Граничная частота
- Резистор эмиттер-база (R2)
- Package / Case
- Серия
Наименование | Описание | Производитель
|
Ток коллектора (макс)
|
Граничное напряжение КЭ(макс)
|
Мощность - Макс.
|
Вид монтажа
|
Тип транзистора
|
Тип корпуса
|
Резистор базы (R1)
|
Напряжение насыщения (макс) @ Ib, Ic
|
Обратный ток коллектора
|
Усиление по току (hFE)
|
Граничная частота
|
Резистор эмиттер-база (R2)
|
Package / Case
|
Серия
|
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RN2105CT(TPL3) | TRANS PREBIAS PNP 20V 0.05A CST3 | Toshiba Semiconductor and Storage | 50mA | 20V | 50mW | Surface Mount | PNP - Pre-Biased | CST3 | 2.2kOhms | 150mV @ 250µA, 5mA | 500nA | 120 @ 10mA, 5V | 47kOhms | SC-101, SOT-883 | ||
RN2606(TE85L,F) | TRANS 2PNP PREBIAS 0.3W SM6 | Toshiba Semiconductor and Storage | 100mA | 50V | 300mW | Surface Mount | 2 PNP - Pre-Biased (Dual) | SM6 | 4.7kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 80 @ 10mA, 5V | 200MHz | 47kOhms | SC-74, SOT-457 | |
RN2905FE,LXHF(CT | AUTO AEC-Q 2-IN-1 (POINT-SYMMETR | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 PNP - Pre-Biased (Dual) | ES6 | 2.2kOhms | 300mV @ 250µA, 5mA | 500nA | 80 @ 10mA, 5V | 200MHz | 47kOhms | SOT-563, SOT-666 | Automotive, AEC-Q101 |
RN2706JE(TE85L,F) | TRANS 2PNP PREBIAS 0.1W ESV | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) | ESV | 4.7kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 80 @ 10mA, 5V | 200MHz | 47kOhms | SOT-553 | |
RN2967(TE85L,F) | TRANS 2PNP PREBIAS 0.2W US6 | Toshiba Semiconductor and Storage | 100mA | 50V | 200mW | Surface Mount | 2 PNP - Pre-Biased (Dual) | US6 | 10kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 80 @ 10mA, 5V | 200MHz | 47kOhms | 6-TSSOP, SC-88, SOT-363 | |
RN1131MFV(TL3,T) | TRANS PREBIAS NPN 50V 0.1A VESM | Toshiba Semiconductor and Storage | 100mA | 50V | 150mW | Surface Mount | NPN - Pre-Biased | VESM | 100kOhms | 300mV @ 500µA, 5mA | 100nA (ICBO) | 120 @ 1mA, 5V | SOT-723 | |||
RN2103MFV,L3F(CT | TRANS PREBIAS PNP 50V 0.1A VESM | Toshiba Semiconductor and Storage | 100mA | 50V | 150mW | Surface Mount | PNP - Pre-Biased | VESM | 22kOhms | 300mV @ 500µA, 5mA | 500nA | 70 @ 10mA, 5V | 250MHz | 22kOhms | SOT-723 | |
RN1114MFV,L3F | TRANS PREBIAS NPN 50V 0.1A VESM | Toshiba Semiconductor and Storage | 100mA | 50V | 150mW | Surface Mount | NPN - Pre-Biased | VESM | 1kOhms | 300mV @ 250µA, 5mA | 500nA | 50 @ 10mA, 5V | 250MHz | 10kOhms | SOT-723 | |
RN2108CT(TPL3) | TRANS PREBIAS PNP 20V 0.05A CST3 | Toshiba Semiconductor and Storage | 50mA | 20V | 50mW | Surface Mount | PNP - Pre-Biased | CST3 | 22kOhms | 150mV @ 250µA, 5mA | 500nA | 120 @ 10mA, 5V | 47kOhms | SC-101, SOT-883 | ||
RN2106(T5L,F,T) | TRANS PREBIAS PNP 50V 0.1A SSM | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | PNP - Pre-Biased | SSM | 4.7kOhms | 300mV @ 250µA, 5mA | 500nA | 80 @ 10mA, 5V | 200MHz | 47kOhms | SC-75, SOT-416 | |
RN1965FE(TE85L,F) | TRANS 2PNP PREBIAS 0.1W ES6 | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 PNP - Pre-Biased (Dual) | ES6 | 2.2kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 80 @ 10mA, 5V | 250MHz | 47kOhms | SOT-563, SOT-666 | |
RN2901(T5L,F,T) | TRANS 2PNP PREBIAS 0.2W US6 | Toshiba Semiconductor and Storage | 100mA | 50V | 200mW | Surface Mount | 2 PNP - Pre-Biased (Dual) | US6 | 4.7kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 30 @ 10mA, 5V | 200MHz | 4.7kOhms | 6-TSSOP, SC-88, SOT-363 | |
RN2426(TE85L,F) | TRANS PREBIAS PNP 50V 0.8A SMINI | Toshiba Semiconductor and Storage | 800mA | 50V | 200mW | Surface Mount | PNP - Pre-Biased | S-Mini | 1kOhms | 250mV @ 1mA, 50mA | 500nA | 90 @ 100mA, 1V | 200MHz | 10kOhms | TO-236-3, SC-59, SOT-23-3 | |
RN1970(TE85L,F) | TRANS 2NPN PREBIAS 0.2W US6 | Toshiba Semiconductor and Storage | 100mA | 50V | 200mW | Surface Mount | 2 NPN - Pre-Biased (Dual) | US6 | 4.7kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 120 @ 1mA, 5V | 250MHz | 6-TSSOP, SC-88, SOT-363 | ||
RN1104MFV,L3F(CT | TRANS PREBIAS NPN 50V 0.1A VESM | Toshiba Semiconductor and Storage | 100mA | 50V | 150mW | Surface Mount | NPN - Pre-Biased | VESM | 47kOhms | 300mV @ 500µA, 5mA | 500nA | 80 @ 10mA, 5V | 47kOhms | SOT-723 |
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