Найдено: 731
Наименование Описание Производитель
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Тип корпуса
Резистор базы (R1)
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Граничная частота
Резистор эмиттер-база (R2)
Package / Case
Серия
RN2405,LXHF AUTO AEC-Q SINGLE PNP Q1BSR=2.2K Toshiba Semiconductor and Storage 100mA 50V 200mW Surface Mount PNP - Pre-Biased S-Mini 2.2kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 200MHz 47kOhms TO-236-3, SC-59, SOT-23-3 Automotive, AEC-Q101
RN1708JE(TE85L,F) NPN X 2 BRT Q1BSR=22KOHM Q1BER=4 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) (Emitter Coupled) ESV 22kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 250MHz 47kOhms SOT-553
RN4987FE,LF(CT TRANS NPN/PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) ES6 10kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 250MHz, 200MHz 47kOhms SOT-563, SOT-666
RN1609(TE85L,F) TRANS 2NPN PREBIAS 0.3W SM6 Toshiba Semiconductor and Storage 100mA 50V 300mW Surface Mount 2 NPN - Pre-Biased (Dual) SM6 47kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 70 @ 10mA, 5V 250MHz 22kOhms SC-74, SOT-457
RN1306,LXHF AUTO AEC-Q SINGLE NPN , R1=4.7KO Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount NPN - Pre-Biased SC-70 4.7kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 200MHz 47kOhms SC-70, SOT-323 Automotive, AEC-Q101
RN1903,LXHF(CT AUTO AEC-Q 2-IN-1 (POINT-SYM) NP Toshiba Semiconductor and Storage 100mA 50V 200mW Surface Mount 2 NPN - Pre-Biased (Dual) US6 22kOhms 300mV @ 250µA, 5mA 500nA 70 @ 10mA, 5V 250MHz 22kOhms 6-TSSOP, SC-88, SOT-363 Automotive, AEC-Q101
RN2111,LF(CT TRANS PREBIAS PNP 50V 0.1A SSM Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount PNP - Pre-Biased SSM 10kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 200MHz SC-75, SOT-416
RN4983,LF(CT TRANS NPN/PNP PREBIAS 0.2W US6 Toshiba Semiconductor and Storage 100mA 50V 200mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) US6 22kOhms 300mV @ 250µA, 5mA 500nA 70 @ 10mA, 5V 250MHz, 200MHz 22kOhms 6-TSSOP, SC-88, SOT-363
RN2425(TE85L,F) TRANS PREBIAS PNP 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount PNP - Pre-Biased S-Mini 250mV @ 1mA, 50mA 500nA 90 @ 100mA, 1V 200MHz 10kOhms TO-236-3, SC-59, SOT-23-3
RN4988FE,LXHF(CT AUTO AEC-Q TR NPN+PNP Q1BSR=22KO Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) ES6 22kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 250MHz, 200MHz 47kOhms SOT-563, SOT-666 Automotive, AEC-Q101
RN4988(T5L,F,T) TRANS NPN/PNP PREBIAS 0.2W US6 Toshiba Semiconductor and Storage 100mA 50V 200mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) US6 22kOhms 300mV @ 250µA, 5mA 100µA (ICBO) 80 @ 10mA, 5V 250MHz, 200MHz 47kOhms 6-TSSOP, SC-88, SOT-363
RN2308,LF TRANS PREBIAS PNP 50V 0.1A USM Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount PNP - Pre-Biased SC-70 22kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 200MHz 47kOhms SC-70, SOT-323
RN2601(TE85L,F) TRANS 2PNP PREBIAS 0.3W SM6 Toshiba Semiconductor and Storage 100mA 50V 300mW Surface Mount 2 PNP - Pre-Biased (Dual) SM6 4.7kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 30 @ 10mA, 5V 200MHz 4.7kOhms SC-74, SOT-457
RN2906(T5L,F,T) TRANS 2PNP PREBIAS 0.2W US6 Toshiba Semiconductor and Storage 100mA 50V 200mW Surface Mount 2 PNP - Pre-Biased (Dual) US6 4.7kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 200MHz 47kOhms 6-TSSOP, SC-88, SOT-363
RN1908FE(TE85L,F) TRANS 2NPN PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) ES6 22kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 250MHz 47kOhms SOT-563, SOT-666