Найдено: 731
Наименование Описание Производитель
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Тип корпуса
Резистор базы (R1)
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Граничная частота
Резистор эмиттер-база (R2)
Package / Case
Серия
RN1106,LF(CT TRANS PREBIAS NPN 50V 0.1A SSM Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount NPN - Pre-Biased SSM 4.7kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 250MHz 47kOhms SC-75, SOT-416
RN2306,LF TRANS PREBIAS PNP 50V 0.1A USM Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount PNP - Pre-Biased SC-70 4.7kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 200MHz 47kOhms SC-70, SOT-323
RN4911,LXHF(CT AUTO AEC-Q TR PNP+NPN BRT Q1BSR= Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) US6 10kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 200MHz, 250MHz 6-TSSOP, SC-88, SOT-363
RN1962FE(TE85L,F) TRANS 2NPN PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) ES6 10kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 50 @ 10mA, 5V 250MHz 10kOhms SOT-563, SOT-666
RN1116(TE85L,F) TRANS PREBIAS NPN 50V 0.1A SSM Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount NPN - Pre-Biased SSM 4.7kOhms 300mV @ 250µA, 5mA 500nA 50 @ 10mA, 5V 250MHz 10kOhms SC-75, SOT-416
RN1131MFV,L3F TRANS PREBIAS NPN 50V 0.1A VESM Toshiba Semiconductor and Storage 100mA 50V 150mW Surface Mount NPN - Pre-Biased VESM 100kOhms 300mV @ 500µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V SOT-723
RN1101MFV,L3F(CT TRANS PREBIAS NPN 50V 0.1A VESM Toshiba Semiconductor and Storage 100mA 50V 150mW Surface Mount NPN - Pre-Biased VESM 4.7kOhms 300mV @ 500µA, 5mA 500nA 30 @ 10mA, 5V 4.7kOhms SOT-723
RN1118(T5L,F,T) TRANS PREBIAS NPN 50V 0.1A SSM Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount NPN - Pre-Biased SSM 47kOhms 300mV @ 250µA, 5mA 500nA 50 @ 10mA, 5V 250MHz 10kOhms SC-75, SOT-416
RN4902FE,LF(CT TRANS NPN/PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) ES6 10kOhms 300mV @ 250µA, 5mA 500nA 50 @ 10mA, 5V 250MHz, 200MHz 10kOhms SOT-563, SOT-666
RN1413(TE85L,F) TRANS PREBIAS NPN 50V 0.1A SMINI Toshiba Semiconductor and Storage 100mA 50V 200mW Surface Mount NPN - Pre-Biased S-Mini 47kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 250MHz TO-236-3, SC-59, SOT-23-3
RN1910,LXHF(CT AUTO AEC-Q 2-IN-1 (POINT-SYM) NP Toshiba Semiconductor and Storage 100mA 50V 200mW Surface Mount 2 NPN - Pre-Biased (Dual) US6 4.7kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 250MHz 6-TSSOP, SC-88, SOT-363 Automotive, AEC-Q101
RN4601(TE85L,F) TRANS NPN/PNP PREBIAS 0.3W SM6 Toshiba Semiconductor and Storage 100mA 50V 300mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) SM6 4.7kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 30 @ 10mA, 5V 250MHz 4.7kOhms SC-74, SOT-457
RN4905,LXHF(CT AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Toshiba Semiconductor and Storage 100mA 50V 200mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) US6 2.2kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 200MHz, 250MHz 47kOhms 6-TSSOP, SC-88, SOT-363 Automotive, AEC-Q101
RN2130MFV,L3F TRANS PREBIAS PNP 50V 0.1A VESM Toshiba Semiconductor and Storage 100mA 50V 150mW Surface Mount PNP - Pre-Biased VESM 100kOhms 300mV @ 500µA, 5mA 100nA (ICBO) 100 @ 10mA, 5V 100kOhms SOT-723
RN1906,LF TRANS 2NPN PREBIAS 0.2W US6 Toshiba Semiconductor and Storage 100mA 50V 200mW Surface Mount 2 NPN - Pre-Biased (Dual) US6 4.7kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 250MHz 47kOhms 6-TSSOP, SC-88, SOT-363