- Производитель
- Ток коллектора (макс)
- Граничное напряжение КЭ(макс)
- Тип транзистора
- Тип корпуса
-
- Напряжение насыщения (макс) @ Ib, Ic
- Обратный ток коллектора
- Усиление по току (hFE)
- Граничная частота
- Резистор эмиттер-база (R2)
- Package / Case
- Серия
Наименование | Описание | Производитель
|
Ток коллектора (макс)
|
Граничное напряжение КЭ(макс)
|
Мощность - Макс.
|
Вид монтажа
|
Тип транзистора
|
Тип корпуса
|
Резистор базы (R1)
|
Напряжение насыщения (макс) @ Ib, Ic
|
Обратный ток коллектора
|
Усиление по току (hFE)
|
Граничная частота
|
Резистор эмиттер-база (R2)
|
Package / Case
|
Серия
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
RN1106,LF(CT | TRANS PREBIAS NPN 50V 0.1A SSM | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | NPN - Pre-Biased | SSM | 4.7kOhms | 300mV @ 250µA, 5mA | 500nA | 80 @ 10mA, 5V | 250MHz | 47kOhms | SC-75, SOT-416 | |
RN2306,LF | TRANS PREBIAS PNP 50V 0.1A USM | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | PNP - Pre-Biased | SC-70 | 4.7kOhms | 300mV @ 250µA, 5mA | 500nA | 80 @ 10mA, 5V | 200MHz | 47kOhms | SC-70, SOT-323 | |
RN4911,LXHF(CT | AUTO AEC-Q TR PNP+NPN BRT Q1BSR= | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 1 NPN, 1 PNP - Pre-Biased (Dual) | US6 | 10kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 120 @ 1mA, 5V | 200MHz, 250MHz | 6-TSSOP, SC-88, SOT-363 | ||
RN1962FE(TE85L,F) | TRANS 2NPN PREBIAS 0.1W ES6 | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 NPN - Pre-Biased (Dual) | ES6 | 10kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 50 @ 10mA, 5V | 250MHz | 10kOhms | SOT-563, SOT-666 | |
RN1116(TE85L,F) | TRANS PREBIAS NPN 50V 0.1A SSM | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | NPN - Pre-Biased | SSM | 4.7kOhms | 300mV @ 250µA, 5mA | 500nA | 50 @ 10mA, 5V | 250MHz | 10kOhms | SC-75, SOT-416 | |
RN1131MFV,L3F | TRANS PREBIAS NPN 50V 0.1A VESM | Toshiba Semiconductor and Storage | 100mA | 50V | 150mW | Surface Mount | NPN - Pre-Biased | VESM | 100kOhms | 300mV @ 500µA, 5mA | 100nA (ICBO) | 120 @ 1mA, 5V | SOT-723 | |||
RN1101MFV,L3F(CT | TRANS PREBIAS NPN 50V 0.1A VESM | Toshiba Semiconductor and Storage | 100mA | 50V | 150mW | Surface Mount | NPN - Pre-Biased | VESM | 4.7kOhms | 300mV @ 500µA, 5mA | 500nA | 30 @ 10mA, 5V | 4.7kOhms | SOT-723 | ||
RN1118(T5L,F,T) | TRANS PREBIAS NPN 50V 0.1A SSM | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | NPN - Pre-Biased | SSM | 47kOhms | 300mV @ 250µA, 5mA | 500nA | 50 @ 10mA, 5V | 250MHz | 10kOhms | SC-75, SOT-416 | |
RN4902FE,LF(CT | TRANS NPN/PNP PREBIAS 0.1W ES6 | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 1 NPN, 1 PNP - Pre-Biased (Dual) | ES6 | 10kOhms | 300mV @ 250µA, 5mA | 500nA | 50 @ 10mA, 5V | 250MHz, 200MHz | 10kOhms | SOT-563, SOT-666 | |
RN1413(TE85L,F) | TRANS PREBIAS NPN 50V 0.1A SMINI | Toshiba Semiconductor and Storage | 100mA | 50V | 200mW | Surface Mount | NPN - Pre-Biased | S-Mini | 47kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 120 @ 1mA, 5V | 250MHz | TO-236-3, SC-59, SOT-23-3 | ||
RN1910,LXHF(CT | AUTO AEC-Q 2-IN-1 (POINT-SYM) NP | Toshiba Semiconductor and Storage | 100mA | 50V | 200mW | Surface Mount | 2 NPN - Pre-Biased (Dual) | US6 | 4.7kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 120 @ 1mA, 5V | 250MHz | 6-TSSOP, SC-88, SOT-363 | Automotive, AEC-Q101 | |
RN4601(TE85L,F) | TRANS NPN/PNP PREBIAS 0.3W SM6 | Toshiba Semiconductor and Storage | 100mA | 50V | 300mW | Surface Mount | 1 NPN, 1 PNP - Pre-Biased (Dual) | SM6 | 4.7kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 30 @ 10mA, 5V | 250MHz | 4.7kOhms | SC-74, SOT-457 | |
RN4905,LXHF(CT | AUTO AEC-Q 2-IN-1 (POINT-SYM) PN | Toshiba Semiconductor and Storage | 100mA | 50V | 200mW | Surface Mount | 1 NPN, 1 PNP - Pre-Biased (Dual) | US6 | 2.2kOhms | 300mV @ 250µA, 5mA | 500nA | 80 @ 10mA, 5V | 200MHz, 250MHz | 47kOhms | 6-TSSOP, SC-88, SOT-363 | Automotive, AEC-Q101 |
RN2130MFV,L3F | TRANS PREBIAS PNP 50V 0.1A VESM | Toshiba Semiconductor and Storage | 100mA | 50V | 150mW | Surface Mount | PNP - Pre-Biased | VESM | 100kOhms | 300mV @ 500µA, 5mA | 100nA (ICBO) | 100 @ 10mA, 5V | 100kOhms | SOT-723 | ||
RN1906,LF | TRANS 2NPN PREBIAS 0.2W US6 | Toshiba Semiconductor and Storage | 100mA | 50V | 200mW | Surface Mount | 2 NPN - Pre-Biased (Dual) | US6 | 4.7kOhms | 300mV @ 250µA, 5mA | 500nA | 80 @ 10mA, 5V | 250MHz | 47kOhms | 6-TSSOP, SC-88, SOT-363 |
- 10
- 15
- 50
- 100