Найдено: 731
Наименование Описание Производитель
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Тип корпуса
Резистор базы (R1)
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Граничная частота
Резистор эмиттер-база (R2)
Package / Case
Серия
RN1708,LF NPNX2 BRT Q1BSR22KOHM Q1BER47KOH Toshiba Semiconductor and Storage 100mA 50V 200mW Surface Mount 2 NPN - Pre-Biased (Dual) USV 22kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 250MHz 47kOhms 5-TSSOP, SC-70-5, SOT-353
RN1904,LF(CT TRANS 2NPN PREBIAS 0.2W US6 Toshiba Semiconductor and Storage 100mA 50V 200mW Surface Mount 2 NPN - Pre-Biased (Dual) US6 47kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 250MHz 47kOhms 6-TSSOP, SC-88, SOT-363
TDTA114Y,LM TRANS PREBIAS PNP 50V 0.1A SOT23 Toshiba Semiconductor and Storage 100mA 50V 320mW Surface Mount PNP - Pre-Biased SOT-23-3 10kOhms 300mV @ 500µA, 10mA 500nA 90 @ 5mA, 5V 250MHz 10kOhms TO-236-3, SC-59, SOT-23-3
RN1906,LF(CT TRANS 2NPN PREBIAS 0.2W US6 Toshiba Semiconductor and Storage 100mA 50V 200mW Surface Mount 2 NPN - Pre-Biased (Dual) US6 4.7kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 250MHz 47kOhms 6-TSSOP, SC-88, SOT-363
RN2115,LF(CT TRANS PREBIAS PNP 50V 0.1A SSM Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount PNP - Pre-Biased SSM 2.2kOhms 300mV @ 250µA, 5mA 500nA 50 @ 10mA, 5V 200MHz 10kOhms SC-75, SOT-416
RN1401,LF TRANS PREBIAS NPN 50V 0.1A SMINI Toshiba Semiconductor and Storage 100mA 50V 200mW Surface Mount NPN - Pre-Biased S-Mini 4.7kOhms 300mV @ 250µA, 5mA 500nA 30 @ 10mA, 5V 250MHz 4.7kOhms TO-236-3, SC-59, SOT-23-3
RN4908,LF(CT PNP + NPN BRT Q1BSR10KOHM Q1BER4 Toshiba Semiconductor and Storage 100mA 50V 200mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) US6 22kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 200MHz, 250MHz 47kOhms 6-TSSOP, SC-88, SOT-363
RN1907FE,LF(CT TRANS 2NPN PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) ES6 10kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 250MHz 47kOhms SOT-563, SOT-666
RN2402S,LF(D TRANS PREBIAS PNP 50V 0.1A SMINI Toshiba Semiconductor and Storage 100mA 50V 200mW Surface Mount PNP - Pre-Biased S-Mini 10kOhms 300mV @ 250µA, 5mA 500nA 50 @ 10mA, 5V 200MHz 10kOhms TO-236-3, SC-59, SOT-23-3
RN1105,LF(CT TRANS PREBIAS NPN 50V 0.1A SSM Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount NPN - Pre-Biased SSM 2.2kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 250MHz 47kOhms SC-75, SOT-416
RN2106MFV,L3F(CT TRANS PREBIAS PNP 50V 0.1A VESM Toshiba Semiconductor and Storage 100mA 50V 150mW Surface Mount PNP - Pre-Biased VESM 4.7kOhms 300mV @ 500µA, 5mA 500nA 80 @ 10mA, 5V 250MHz 47kOhms SOT-723
RN1709JE(TE85L,F) NPN X 2 BRT Q1BSR=47KOHM Q1BER=2 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) (Emitter Coupled) ESV 47kOhms 300mV @ 250µA, 5mA 500nA 70 @ 10mA, 5V 250MHz 22kOhms SOT-553
RN2703JE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) (Emitter Coupled) ESV 22kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 70 @ 10mA, 5V 200MHz 22kOhms SOT-553
RN1108CT(TPL3) TRANS PREBIAS NPN 20V 0.05A CST3 Toshiba Semiconductor and Storage 50mA 20V 50mW Surface Mount NPN - Pre-Biased CST3 22kOhms 150mV @ 250µA, 5mA 500nA 120 @ 10mA, 5V 47kOhms SC-101, SOT-883
RN2904FE,LF TRANS 2PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ES6 47kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 200MHz 47kOhms SOT-563, SOT-666