- Производитель
- Ток коллектора (макс)
- Граничное напряжение КЭ(макс)
- Тип транзистора
- Тип корпуса
-
- Напряжение насыщения (макс) @ Ib, Ic
- Обратный ток коллектора
- Усиление по току (hFE)
- Граничная частота
- Резистор эмиттер-база (R2)
- Package / Case
- Серия
Наименование | Описание | Производитель
|
Ток коллектора (макс)
|
Граничное напряжение КЭ(макс)
|
Мощность - Макс.
|
Вид монтажа
|
Тип транзистора
|
Тип корпуса
|
Резистор базы (R1)
|
Напряжение насыщения (макс) @ Ib, Ic
|
Обратный ток коллектора
|
Усиление по току (hFE)
|
Граничная частота
|
Резистор эмиттер-база (R2)
|
Package / Case
|
Серия
|
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RN1708,LF | NPNX2 BRT Q1BSR22KOHM Q1BER47KOH | Toshiba Semiconductor and Storage | 100mA | 50V | 200mW | Surface Mount | 2 NPN - Pre-Biased (Dual) | USV | 22kOhms | 300mV @ 250µA, 5mA | 500nA | 80 @ 10mA, 5V | 250MHz | 47kOhms | 5-TSSOP, SC-70-5, SOT-353 | |
RN1904,LF(CT | TRANS 2NPN PREBIAS 0.2W US6 | Toshiba Semiconductor and Storage | 100mA | 50V | 200mW | Surface Mount | 2 NPN - Pre-Biased (Dual) | US6 | 47kOhms | 300mV @ 250µA, 5mA | 500nA | 80 @ 10mA, 5V | 250MHz | 47kOhms | 6-TSSOP, SC-88, SOT-363 | |
TDTA114Y,LM | TRANS PREBIAS PNP 50V 0.1A SOT23 | Toshiba Semiconductor and Storage | 100mA | 50V | 320mW | Surface Mount | PNP - Pre-Biased | SOT-23-3 | 10kOhms | 300mV @ 500µA, 10mA | 500nA | 90 @ 5mA, 5V | 250MHz | 10kOhms | TO-236-3, SC-59, SOT-23-3 | |
RN1906,LF(CT | TRANS 2NPN PREBIAS 0.2W US6 | Toshiba Semiconductor and Storage | 100mA | 50V | 200mW | Surface Mount | 2 NPN - Pre-Biased (Dual) | US6 | 4.7kOhms | 300mV @ 250µA, 5mA | 500nA | 80 @ 10mA, 5V | 250MHz | 47kOhms | 6-TSSOP, SC-88, SOT-363 | |
RN2115,LF(CT | TRANS PREBIAS PNP 50V 0.1A SSM | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | PNP - Pre-Biased | SSM | 2.2kOhms | 300mV @ 250µA, 5mA | 500nA | 50 @ 10mA, 5V | 200MHz | 10kOhms | SC-75, SOT-416 | |
RN1401,LF | TRANS PREBIAS NPN 50V 0.1A SMINI | Toshiba Semiconductor and Storage | 100mA | 50V | 200mW | Surface Mount | NPN - Pre-Biased | S-Mini | 4.7kOhms | 300mV @ 250µA, 5mA | 500nA | 30 @ 10mA, 5V | 250MHz | 4.7kOhms | TO-236-3, SC-59, SOT-23-3 | |
RN4908,LF(CT | PNP + NPN BRT Q1BSR10KOHM Q1BER4 | Toshiba Semiconductor and Storage | 100mA | 50V | 200mW | Surface Mount | 1 NPN, 1 PNP - Pre-Biased (Dual) | US6 | 22kOhms | 300mV @ 250µA, 5mA | 500nA | 80 @ 10mA, 5V | 200MHz, 250MHz | 47kOhms | 6-TSSOP, SC-88, SOT-363 | |
RN1907FE,LF(CT | TRANS 2NPN PREBIAS 0.1W ES6 | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 NPN - Pre-Biased (Dual) | ES6 | 10kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 80 @ 10mA, 5V | 250MHz | 47kOhms | SOT-563, SOT-666 | |
RN2402S,LF(D | TRANS PREBIAS PNP 50V 0.1A SMINI | Toshiba Semiconductor and Storage | 100mA | 50V | 200mW | Surface Mount | PNP - Pre-Biased | S-Mini | 10kOhms | 300mV @ 250µA, 5mA | 500nA | 50 @ 10mA, 5V | 200MHz | 10kOhms | TO-236-3, SC-59, SOT-23-3 | |
RN1105,LF(CT | TRANS PREBIAS NPN 50V 0.1A SSM | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | NPN - Pre-Biased | SSM | 2.2kOhms | 300mV @ 250µA, 5mA | 500nA | 80 @ 10mA, 5V | 250MHz | 47kOhms | SC-75, SOT-416 | |
RN2106MFV,L3F(CT | TRANS PREBIAS PNP 50V 0.1A VESM | Toshiba Semiconductor and Storage | 100mA | 50V | 150mW | Surface Mount | PNP - Pre-Biased | VESM | 4.7kOhms | 300mV @ 500µA, 5mA | 500nA | 80 @ 10mA, 5V | 250MHz | 47kOhms | SOT-723 | |
RN1709JE(TE85L,F) | NPN X 2 BRT Q1BSR=47KOHM Q1BER=2 | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | ESV | 47kOhms | 300mV @ 250µA, 5mA | 500nA | 70 @ 10mA, 5V | 250MHz | 22kOhms | SOT-553 | |
RN2703JE(TE85L,F) | TRANS 2PNP PREBIAS 0.1W ESV | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) | ESV | 22kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 70 @ 10mA, 5V | 200MHz | 22kOhms | SOT-553 | |
RN1108CT(TPL3) | TRANS PREBIAS NPN 20V 0.05A CST3 | Toshiba Semiconductor and Storage | 50mA | 20V | 50mW | Surface Mount | NPN - Pre-Biased | CST3 | 22kOhms | 150mV @ 250µA, 5mA | 500nA | 120 @ 10mA, 5V | 47kOhms | SC-101, SOT-883 | ||
RN2904FE,LF | TRANS 2PNP PREBIAS 0.1W ES6 | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 PNP - Pre-Biased (Dual) | ES6 | 47kOhms | 300mV @ 250µA, 5mA | 500nA | 80 @ 10mA, 5V | 200MHz | 47kOhms | SOT-563, SOT-666 |
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