• 10
  • 15
  • 50
  • 100
Списком Таблицей
Найдено: 731
Наименование Описание Производитель
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Тип корпуса
Резистор базы (R1)
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Граничная частота
Резистор эмиттер-база (R2)
Package / Case
Серия
RN2506(TE85L,F) TRANS 2PNP PREBIAS 0.3W SMV Toshiba Semiconductor and Storage 100mA 50V 300mW Surface Mount 2 PNP - Pre-Biased (Dual) (Emitter Coupled) SMV 4.7kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 200MHz 47kOhms SC-74A, SOT-753
RN2507(TE85L,F) TRANS 2PNP PREBIAS 0.3W SMV Toshiba Semiconductor and Storage 100mA 50V 300mW Surface Mount 2 PNP - Pre-Biased (Dual) (Emitter Coupled) SMV 10kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 200MHz 47kOhms SC-74A, SOT-753
RN2316(TE85L,F) TRANS PREBIAS PNP 50V 0.1A USM Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount PNP - Pre-Biased USM 4.7kOhms 300mV @ 250µA, 5mA 500nA 50 @ 10mA, 5V 200MHz 10kOhms SC-70, SOT-323
RN2110CT(TPL3) TRANS PREBIAS PNP 20V 0.05A CST3 Toshiba Semiconductor and Storage 50mA 20V 50mW Surface Mount PNP - Pre-Biased CST3 4.7kOhms 150mV @ 250µA, 5mA 100nA (ICBO) 300 @ 1mA, 5V SC-101, SOT-883
RN4991FE,LF(CT NPN + PNP BRT Q1BSR10KOHM Q1BERI Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) ES6 10kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 250MHz, 200MHz SOT-563, SOT-666
RN1970FE(TE85L,F) TRANS 2NPN PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) ES6 4.7kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 250MHz SOT-563, SOT-666
RN1117MFV,L3F TRANS PREBIAS NPN 50V 0.1A VESM Toshiba Semiconductor and Storage 100mA 50V 150mW Surface Mount NPN - Pre-Biased VESM 10kOhms 300mV @ 500µA, 5mA 500nA 30 @ 10mA, 5V 250MHz 4.7kOhms SOT-723
RN2603(TE85L,F) TRANS 2PNP PREBIAS 0.3W SM6 Toshiba Semiconductor and Storage 100mA 50V 300mW Surface Mount 2 PNP - Pre-Biased (Dual) SM6 22kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 70 @ 10mA, 5V 200MHz 22kOhms SC-74, SOT-457
RN2510(TE85L,F) TRANS 2PNP PREBIAS 0.3W SMV Toshiba Semiconductor and Storage 100mA 50V 300mW Surface Mount 2 PNP - Pre-Biased (Dual) (Emitter Coupled) SMV 4.7kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 200MHz SC-74A, SOT-753
RN1105MFV,L3F TRANS PREBIAS NPN 50V 0.1A VESM Toshiba Semiconductor and Storage 100mA 50V 150mW Surface Mount NPN - Pre-Biased VESM 2.2kOhms 300mV @ 500µA, 5mA 500nA 80 @ 10mA, 5V 47kOhms SOT-723
RN2910,LF(CT PNPX2 BRT Q1BSR4.7KOHM Q1BERINF. Toshiba Semiconductor and Storage 100mA 50V 200mW Surface Mount 2 PNP - Pre-Biased (Dual) SMQ 4.7kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 200MHz SC-61AA
RN1103MFV,L3XHF(CT AUTO AEC-Q NPN Q1BSR=22K, Q1BER= Toshiba Semiconductor and Storage 100mA 50V 150mW Surface Mount NPN - Pre-Biased VESM 22kOhms 300mV @ 500µA, 5mA 500nA 70 @ 10mA, 5V 22kOhms SOT-723 Automotive, AEC-Q101
RN2710JE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) (Emitter Coupled) ESV 4.7kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 200MHz SOT-553
RN4986FE,LXHF(CT AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) ES6 4.7kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 250MHz, 200MHz 47kOhms SOT-563, SOT-666 Automotive, AEC-Q101
RN4986,LXHF(CT AUTO AEC-Q 2-IN-1 (POINT-SYM) NP Toshiba Semiconductor and Storage 100mA 50V 200mW Surface Mount 1 NPN, 1 PNP - Pre-Biased (Dual) US6 4.7kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 250MHz, 200MHz 47kOhms 6-TSSOP, SC-88, SOT-363 Automotive, AEC-Q101
  • 10
  • 15
  • 50
  • 100