Найдено: 33
Наименование Описание Производитель
Package / Case
Вид монтажа
Напряжение в закрытом состоянии
Ток в открытом сост. (Макс)
Рабочая температура
Тип корпуса
Current - On State (It (AV)) (Max)
Напряжение открытия (Vgt) (макс)
Отпирающий ток
Ударный ток
Ток удержания
Voltage - On State (Vtm) (Max)
Current - Off State (Max)
SCR Type
BT169D-L,112 SCR 400V 800MA TO92-3 WeEn Semiconductors TO-226-3, TO-92-3 (TO-226AA) Through Hole 400V 800mA TO-92-3 500mA 800mV 50µA 8A, 9A 5mA 1.7V 100µA Sensitive Gate
BT169G/DG,126 SCR 600V 800MA TO92-3 WeEn Semiconductors TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole 600V 800mA TO-92-3 500mA 800mV 200µA 8A, 9A 5mA 1.7V 100µA Sensitive Gate
BT169H/01U SCR 800V 800MA TO92-3 WeEn Semiconductors TO-226-3, TO-92-3 (TO-226AA) Through Hole 800V 800mA TO-92-3 500mA 800mV 100µA 9A, 10A 3mA 1.7V 100µA Sensitive Gate
BT169G,126 SCR 600V 800MA TO92-3 WeEn Semiconductors TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole 600V 800mA TO-92-3 500mA 800mV 200µA 8A, 9A 5mA 1.7V 100µA Sensitive Gate
N0118GA,412 SCR 600V 800MA TO92-3 WeEn Semiconductors TO-226-3, TO-92-3 (TO-226AA) Through Hole 600V 800mA TO-92-3 510mA 800mV 7µA 8A, 9A 5mA 1.95V 10µA Sensitive Gate
BT149D,112 SCR 400V 800MA TO92-3 WeEn Semiconductors TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole 400V 800mA 125°C (TJ) TO-92-3 500mA 800mV 200µA 8A, 9A 5mA 1.7V 100µA Sensitive Gate
BT169DEP SCR 400V 800MA TO92-3 WeEn Semiconductors TO-226-3, TO-92-3 (TO-226AA) Through Hole 400V 800mA 125°C (TJ) TO-92-3 500mA 800mV 200µA 8A, 9A 5mA 1.7V 100µA Sensitive Gate
BT169H-LML SCR 800V 800MA TO92-3 WeEn Semiconductors TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole 800V 800mA 125°C (TJ) TO-92-3 500mA 800mV 50µA 9A, 10A 3mA 1.7V 100µA Sensitive Gate
BT169G-L,412 SCR 600V SOT54 WeEn Semiconductors TO-226-3, TO-92-3 (TO-226AA) Through Hole 600V 800mA 125°C (TJ) TO-92-3 500mA 800mV 50µA 8A, 9A 1mA 1.7V 2µA Sensitive Gate
BT169D,116 SCR 400V 800MA TO92-3 WeEn Semiconductors TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole 400V 800mA TO-92-3 500mA 800mV 200µA 8A, 9A 5mA 1.7V 100µA Sensitive Gate
BT149G,126 SCR 600V 800MA TO92-3 WeEn Semiconductors TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole 600V 800mA TO-92-3 500mA 800mV 200µA 8A, 9A 5mA 1.7V 100µA Sensitive Gate
BT149G,412 SCR 600V 800MA TO92-3 WeEn Semiconductors TO-226-3, TO-92-3 (TO-226AA) Through Hole 600V 800mA TO-92-3 500mA 800mV 200µA 8A, 9A 5mA 1.7V 100µA Sensitive Gate
BT169D,112 SCR 400V 800MA TO92-3 WeEn Semiconductors TO-226-3, TO-92-3 (TO-226AA) Through Hole 400V 800mA 125°C (TJ) TO-92-3 500mA 800mV 200µA 8A, 9A 5mA 1.7V 100µA Sensitive Gate
BT169D/DG,126 SCR 400V 800MA TO92-3 WeEn Semiconductors TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole 400V 800mA TO-92-3 500mA 800mV 200µA 8A, 9A 5mA 1.7V 100µA Sensitive Gate
N0118GA,116 SCR 600V 800MA TO92-3 WeEn Semiconductors TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole 600V 800mA TO-92-3 510mA 800mV 7µA 8A, 9A 5mA 1.95V 10µA Sensitive Gate