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Списком Таблицей
Найдено: 19
Наименование Описание Производитель
Package / Case
Вид монтажа
Напряжение в закрытом состоянии
Ток в открытом сост. (Макс)
Рабочая температура
Тип корпуса
Current - On State (It (AV)) (Max)
Напряжение открытия (Vgt) (макс)
Отпирающий ток
Ударный ток
Ток удержания
Voltage - On State (Vtm) (Max)
Current - Off State (Max)
SCR Type
TYN16-600RT127 SILICON CONTROLLED RECTIFIER - T NXP USA Inc.
BT258-800R,127 NOW WEEN - BT258-800R - SILICON NXP USA Inc. TO-220-3 Through Hole 800V 8A -40°C ~ 125°C TO-220AB 5A 1.5V 200µA 75A, 82A 6mA 1.6V 500µA Sensitive Gate
EC103D1,116 NOW WEEN - EC103D1 - SILICON CON NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole 400V 800mA TO-92-3 500mA 800mV 12µA 8A, 9A 5mA 1.35V 100µA Sensitive Gate
BT151-650L,127 NOW WEEN - BT151-650L - SILICON NXP USA Inc. TO-220-3 Through Hole 650V 12A -40°C ~ 125°C TO-220AB 7.5A 1.5V 5mA 120A, 132A 20mA 1.75V 500µA Standard Recovery
BT169G,126 NOW WEEN - BT169G - SILICON CONT NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole 600V 800mA TO-92-3 500mA 800mV 200µA 8A, 9A 5mA 1.7V 100µA Sensitive Gate
OT386127 OT386 - GEN. PURPOSE THYRISTOR NXP USA Inc.
BT258S-800LT,118 NOW WEEN - BT258S-800LT - SILICO NXP USA Inc. TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 800V 8A -40°C ~ 150°C DPAK 5A 1.5V 50µA 75A, 82A 6mA 1.6V 2.5mA Sensitive Gate
BT149B,126 SCR 200V 800MA TO92-3 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole 200V 800mA TO-92-3 500mA 800mV 200µA 8A, 9A 5mA 1.7V 100µA Sensitive Gate
BT151X-650C,127 NOW WEEN - BT151X-650C - SILICON NXP USA Inc. TO-220-3 Full Pack, Isolated Tab Through Hole 650V 12A -40°C ~ 125°C TO-220F 7.5A 1.5V 15mA 100A, 110A 20mA 1.75V 500µA Standard Recovery
BT151-500C,127 NOW WEEN - BT151-500C - SILICON NXP USA Inc. TO-220-3 Through Hole 500V 12A -40°C ~ 125°C TO-220AB 7.5A 1.5V 15mA 100A, 110A 20mA 1.75V 500µA Standard Recovery
BT150S-600R,118 NOW WEEN - BT150S-600R - SILICON NXP USA Inc. TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 600V 4A 125°C (TJ) DPAK 2.5A 1V 200µA 35A, 38A 6mA 1.8V 500µA Sensitive Gate
NCR100W-10M115 SILICON CONTROLLED RECTIFIER - S NXP USA Inc.
BT151U-800C,127 NOW WEEN - BT151U-800C - SILICON NXP USA Inc. TO-251-3 Short Leads, IPak, TO-251AA Through Hole 800V 12A -40°C ~ 125°C I-PAK 7.5A 1.5V 15mA 100A, 110A 20mA 1.75V 500µA Standard Recovery
BT169H,112 SCR 800V 800MA TO92-3 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole 800V 800mA TO-92-3 500mA 800mV 100µA 9A, 10A 3mA 1.7V 100µA Sensitive Gate
BT169D-L,112 NOW WEEN - BT169D - SILICON CONT NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) Through Hole 400V 800mA TO-92-3 500mA 800mV 50µA 8A, 9A 5mA 1.7V 100µA Sensitive Gate
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