• Емкость @ Vr, F
    • Прямое напряжение
    • Обратное постоянное напряжение (Vr) (Max)
    • Время обратного восстановления (trr)
    • Рабочая температура перехода
    • Конфигурация диода
    • Средний выпрямленный ток (Io) на диод
    • Серия
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Списком Таблицей
Найдено: 37
Наименование Описание Производитель
Package / Case
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Емкость @ Vr, F
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Время обратного восстановления (trr)
Рабочая температура перехода
WNSC2D101200WQ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors TO-247-2 10A Silicon Carbide Schottky Through Hole TO-247-2 No Recovery Time > 500mA (Io) 110µA @ 1200V 490pF @ 1V, 1MHz 1.65V @ 10A 1200V 0ns 175°C
WNSC6D10650Q SILICON CARBIDE SCHOTTKY DIODE I WeEn Semiconductors TO-220-2 10A Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 500pF @ 1V, 1MHz 1.4V @ 10A 650V 0ns 175°C
WNSC10650WQ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors TO-247-2 10A Silicon Carbide Schottky Through Hole TO-247-2 No Recovery Time > 500mA (Io) 60µA @ 650V 328pF @ 1V, 1MHz 1.7V @ 10A 650V 0ns 175°C
NXPSC10650B6J DIODE SCHOTTKY 650V 10A D2PAK WeEn Semiconductors TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 10A Silicon Carbide Schottky Surface Mount D2PAK No Recovery Time > 500mA (Io) 250µA @ 650V 300pF @ 1V, 1MHz 1.7V @ 10A 650V 0ns 175°C (Max)
BYC10X-600,127 DIODE GEN PURP 500V 10A TO220FP WeEn Semiconductors TO-220-2 Full Pack, Isolated Tab 10A Standard Through Hole TO-220FP Fast Recovery =< 500ns, > 200mA (Io) 200µA @ 600V 2.9V @ 10A 500V 55ns 150°C (Max)
WND10P08XQ STANDARD POWER DIODE WeEn Semiconductors TO-220-2 Full Pack, Isolated Tab 10A Standard Through Hole TO-220F Standard Recovery >500ns, > 200mA (Io) 10µA @ 800V 1.3V @ 10A 800V 150°C
NXPLQSC10650Q DIODE SCHOTTKY 650V 10A TO220AC WeEn Semiconductors TO-220-2 10A Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 230µA @ 650V 250pF @ 1V, 1MHz 1.85V @ 10A 650V 0ns 175°C (Max)
BYV10ED-600PJ DIODE GEN PURP 600V 10A DPAK WeEn Semiconductors TO-252-3, DPak (2 Leads + Tab), SC-63 10A Standard Surface Mount DPAK Fast Recovery =< 500ns, > 200mA (Io) 10µA @ 600V 2V @ 10A 600V 50ns 175°C (Max)
WNSC10650T6J SILICON CARBIDE POWER DIODE WeEn Semiconductors 4-VSFN Exposed Pad 10A Silicon Carbide Schottky Surface Mount 5-DFN (8x8) No Recovery Time > 500mA (Io) 60µA @ 650V 328pF @ 1V, 1MHz 1.7V @ 10A 650V 0ns 175°C (Max)
BYV10EX-600PQ DIODE GEN PURP 600V 10A TO220F WeEn Semiconductors TO-220-2 Full Pack, Isolated Tab 10A Standard Through Hole TO-220FP Fast Recovery =< 500ns, > 200mA (Io) 10µA @ 600V 2V @ 10A 600V 50ns -65°C ~ 175°C
WNSC2D10650DJ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors TO-252-3, DPak (2 Leads + Tab), SC-63 10A Silicon Carbide Schottky Surface Mount DPAK No Recovery Time > 500mA (Io) 50µA @ 650V 310pF @ 1V, 1MHz 1.7V @ 10A 650V 0ns 175°C
WND10P08YQ STANDARD REVERSE RECOVERY POWER WeEn Semiconductors TO-220-2 10A Standard Through Hole IITO-220-2 Standard Recovery >500ns, > 200mA (Io) 10µA @ 800V 1.3V @ 10A 800V 150°C
NXPSC10650D6J DIODE SCHOTTKY 650V 10A DPAK WeEn Semiconductors TO-252-3, DPak (2 Leads + Tab), SC-63 10A Silicon Carbide Schottky Surface Mount DPAK No Recovery Time > 500mA (Io) 250µA @ 650V 300pF @ 1V, 1MHz 1.7V @ 10A 650V 0ns 175°C (Max)
BYV10X-600PQ DIODE GEN PURP 600V 10A TO220-2 WeEn Semiconductors TO-220-2 Full Pack, Isolated Tab 10A Standard Through Hole TO-220FP Fast Recovery =< 500ns, > 200mA (Io) 10µA @ 600V 2V @ 10A 600V 20ns 175°C (Max)
NXPSC10650Q DIODE SCHOTTKY 650V 10A TO220AC WeEn Semiconductors TO-220-2 10A Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 250µA @ 650V 300pF @ 1V, 1MHz 1.7V @ 10A 650V 0ns 175°C (Max)
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