|
CLS03(TE16L,DNSO,Q
|
DIODE SCHOTTKY 60V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 60V |
345pF @ 10V, 1MHz |
0.58V @ 10A |
60V |
|
-40°C ~ 125°C |
|
CLS03(TE16R,Q)
|
DIODE SCHOTTKY 60V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 60V |
345pF @ 10V, 1MHz |
0.58V @ 10A |
60V |
|
-40°C ~ 125°C |
|
CLS02(TE16R,Q)
|
DIODE SCHOTTKY 40V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 40V |
420pF @ 10V, 1MHz |
0.55V @ 10A |
40V |
|
-40°C ~ 125°C |
|
CLS01(TE16R,Q)
|
DIODE SCHOTTKY 30V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 30V |
530pF @ 10V, 1MHz |
470mV @ 10A |
30V |
|
-40°C ~ 125°C |
|
CLS02(TE16L,HIT,Q)
|
DIODE SCHOTTKY 40V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 40V |
420pF @ 10V, 1MHz |
0.55V @ 10A |
40V |
|
-40°C ~ 125°C |
|
CLS03(TE16L,PSD,Q)
|
DIODE SCHOTTKY 60V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 60V |
345pF @ 10V, 1MHz |
0.58V @ 10A |
60V |
|
-40°C ~ 125°C |
|
CLS03(TE16L,PCD,Q)
|
DIODE SCHOTTKY 60V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 60V |
345pF @ 10V, 1MHz |
0.58V @ 10A |
60V |
|
-40°C ~ 125°C |
|
CLS01(TE16L,PAS,Q)
|
DIODE SCHOTTKY 30V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 30V |
530pF @ 10V, 1MHz |
470mV @ 10A |
30V |
|
-40°C ~ 125°C |
|
CLS03(T6L,CANO-O,Q
|
DIODE SCHOTTKY 60V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 60V |
345pF @ 10V, 1MHz |
0.58V @ 10A |
60V |
|
-40°C ~ 125°C |
|
CLS02(T6L,CANO-O,Q
|
DIODE SCHOTTKY 40V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 40V |
420pF @ 10V, 1MHz |
0.55V @ 10A |
40V |
|
-40°C ~ 125°C |
|
CLS03(TE16L,SQC,Q)
|
DIODE SCHOTTKY 60V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 60V |
345pF @ 10V, 1MHz |
0.58V @ 10A |
60V |
|
-40°C ~ 125°C |
|
CLS01,LFJFQ(O
|
DIODE SCHOTTKY 30V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 30V |
530pF @ 10V, 1MHz |
0.47V @ 10A |
30V |
|
-40°C ~ 125°C |
|
CLS02(TE16L,SQC,Q)
|
DIODE SCHOTTKY 40V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 40V |
420pF @ 10V, 1MHz |
0.55V @ 10A |
40V |
|
-40°C ~ 125°C |
|
TRS10E65F,S1Q
|
DODE SCHOTTKY 650V TO220 |
Toshiba Semiconductor and Storage |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220-2L |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
36pF @ 650V, 1MHz |
1.6V @ 10A |
650V |
0ns |
175°C (Max) |
|
CLS03,LNITTOQ(O
|
DIODE SCHOTTKY 60V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 60V |
345pF @ 10V, 1MHz |
0.58V @ 10A |
60V |
|
-40°C ~ 125°C |