Найдено: 8
Наименование Описание Производитель
Package / Case
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Емкость @ Vr, F
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Время обратного восстановления (trr)
Рабочая температура перехода
Серия
BAL99/DG/B2215 RECTIFIER DIODE NXP USA Inc. TO-236-3, SC-59, SOT-23-3 250mA (DC) Standard Surface Mount SOT-23-3 Fast Recovery =< 500ns, > 200mA (Io) 1µA @ 70V 1.5pF @ 0V, 1MHz 1.25V @ 150mA 80V 4ns 150°C (Max) Automotive, AEC-Q101
BAW62,113 DIODE GEN PURP 75V 250MA ALF2 NXP USA Inc. DO-204AH, DO-35, Axial 250mA (DC) Standard Through Hole ALF2 Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 75V 2pF @ 0V, 1MHz 1V @ 100mA 75V 4ns 200°C (Max)
BAS216,115 DIODE GEN PURP 75V 250MA SOD2 NXP USA Inc. SOD-110 250mA (DC) Standard Surface Mount SOD-110 Fast Recovery =< 500ns, > 200mA (Io) 1µA @ 75V 1.5pF @ 0V, 1MHz 1.25V @ 150mA 75V 4ns 150°C (Max)
BAS321/ZLX DIODE GEN PURP 200V 250MA SOD323 NXP USA Inc. SC-76, SOD-323 250mA (DC) Standard Surface Mount SOD-323 Fast Recovery =< 500ns, > 200mA (Io) 100nA @ 200V 2pF @ 0V, 1MHz 1.25V @ 200mA 200V 50ns 150°C (Max)
BAW62,143 DIODE GEN PURP 75V 250MA ALF2 NXP USA Inc. DO-204AH, DO-35, Axial 250mA (DC) Standard Through Hole ALF2 Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 75V 2pF @ 0V, 1MHz 1V @ 100mA 75V 4ns 200°C (Max)
BAW62,133 DIODE GEN PURP 75V 250MA ALF2 NXP USA Inc. DO-204AH, DO-35, Axial 250mA (DC) Standard Through Hole ALF2 Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 75V 2pF @ 0V, 1MHz 1V @ 100mA 75V 4ns 200°C (Max)
BAS321/ZLF DIODE GEN PURP 200V 250MA SOD323 NXP USA Inc. SC-76, SOD-323 250mA (DC) Standard Surface Mount SOD-323 Fast Recovery =< 500ns, > 200mA (Io) 100nA @ 200V 2pF @ 0V, 1MHz 1.25V @ 200mA 200V 50ns 150°C (Max)
BAS216,135 DIODE GEN PURP 75V 250MA SOD2 NXP USA Inc. SOD-110 250mA (DC) Standard Surface Mount SOD-110 Fast Recovery =< 500ns, > 200mA (Io) 1µA @ 75V 1.5pF @ 0V, 1MHz 1.25V @ 150mA 75V 4ns 150°C (Max)