• Емкость @ Vr, F
    • Прямое напряжение
    • Обратное постоянное напряжение (Vr) (Max)
    • Время обратного восстановления (trr)
    • Рабочая температура перехода
    • Конфигурация диода
    • Средний выпрямленный ток (Io) на диод
    • Серия
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Списком Таблицей
Найдено: 28
Наименование Описание Производитель
Package / Case
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Емкость @ Vr, F
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Время обратного восстановления (trr)
Рабочая температура перехода
Серия
JANTX1N6631U/TR RECTIFIER UFR,FRR Microchip Technology SQ-MELF, E 1.4A Standard Surface Mount D-5B Fast Recovery =< 500ns, > 200mA (Io) 4µA @ 1V 1.4V @ 1.4A 1000V 60ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JANTXV1N6631 DIODE GEN PURP 1.1KV 1.4A D5B Microchip Technology E, Axial 1.4A Standard Through Hole E-PAK Fast Recovery =< 500ns, > 200mA (Io) 4µA @ 1100V 40pF @ 10V, 1MHz 1.6V @ 1.4A 1100V 60ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JAN1N6630 DIODE GEN PURP 900V 1.4A AXIAL Microchip Technology E, Axial 1.4A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 900V 1.4V @ 1.4A 900V 50ns -65°C ~ 150°C Military, MIL-PRF-19500/590
1N6631US/TR RECTIFIER UFR,FRR Microchip Technology SQ-MELF, A 1.4A Standard Surface Mount A-MELF Fast Recovery =< 500ns, > 200mA (Io) 4 µA @ 1.1 V 40pF @ 10V, 1MHz 1.4V @ 1.4A 1.1 V 60ns -65°C ~ 150°C
JAN1N6631/TR RECTIFIER UFR,FRR Microchip Technology E, Axial 1.4A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 1V 1.6V @ 1A 1.1 V 60ns -65°C ~ 175°C Military, MIL-PRF-19500/590
1N6631 DIODE GEN PURP 1.1KV 1.4A AXIAL Microchip Technology A, Axial 1.4A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 4µA @ 1100V 40pF @ 10V, 1MHz 1.4V @ 1.4A 1100V 60ns -65°C ~ 150°C
JANTXV1N6631/TR RECTIFIER UFR,FRR Microchip Technology E, Axial 1.4A Standard Through Hole E-PAK Fast Recovery =< 500ns, > 200mA (Io) 4 µA @ 1.1 V 40pF @ 10V, 1MHz 1.6V @ 1.4A 1.1 V 60ns -65°C ~ 150°C Military, MIL-PRF-19500/590
1N6630/TR RECTIFIER UFR,FRR Microchip Technology A, Axial 1.4A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 990V 40pF @ 10V, 1MHz 1.4V @ 1.4A 990V 50ns -65°C ~ 150°C
JANTX1N6631U DIODE GEN PURP 1KV 1.4A E-MELF Microchip Technology SQ-MELF, E 1.4A Standard Surface Mount D-5B Fast Recovery =< 500ns, > 200mA (Io) 4µA @ 1000V 1.4V @ 1.4A 1000V 60ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JANTXV1N6631US/TR RECTIFIER UFR,FRR Microchip Technology E-MELF 1.4A Standard Surface Mount D-5B Fast Recovery =< 500ns, > 200mA (Io) 4 µA @ 1.1 V 40pF @ 10V, 1MHz 1.6V @ 1.4A 1.1 V 60ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JANTX1N6630US DIODE GEN PURP 900V 1.4A E-MELF Microchip Technology SQ-MELF, E 1.4A Standard Surface Mount D-5B Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 900V 1.4V @ 1.4A 900V 50ns -65°C ~ 150°C Military, MIL-PRF-19500/590
1N6630 DIODE GEN PURP 990V 1.4A AXIAL Microchip Technology A, Axial 1.4A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 990V 40pF @ 10V, 1MHz 1.4V @ 1.4A 990V 50ns -65°C ~ 150°C
JAN1N6631 DIODE GEN PURP 1.1KV 1.4A AXIAL Microchip Technology E, Axial 1.4A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 1000V 1.6V @ 1A 1100V 60ns -65°C ~ 175°C Military, MIL-PRF-19500/590
JAN1N6630/TR RECTIFIER UFR,FRR Microchip Technology E, Axial 1.4A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 900V 1.4V @ 1.4A 900V 50ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JAN1N6631US/TR RECTIFIER UFR,FRR Microchip Technology E-MELF 1.4A Standard Surface Mount D-5B Fast Recovery =< 500ns, > 200mA (Io) 4 µA @ 1.1 V 40pF @ 10V, 1MHz 1.6V @ 1.4A 1.1 V 60ns -65°C ~ 150°C Military, MIL-PRF-19500/590
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