• Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 28
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Series
JANTX1N6631U/TR RECTIFIER UFR,FRR Microchip Technology SQ-MELF, E 1.4A Standard Surface Mount D-5B Fast Recovery =< 500ns, > 200mA (Io) 4µA @ 1V 1.4V @ 1.4A 1000V 60ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JANTXV1N6631 DIODE GEN PURP 1.1KV 1.4A D5B Microchip Technology E, Axial 1.4A Standard Through Hole E-PAK Fast Recovery =< 500ns, > 200mA (Io) 4µA @ 1100V 40pF @ 10V, 1MHz 1.6V @ 1.4A 1100V 60ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JAN1N6630 DIODE GEN PURP 900V 1.4A AXIAL Microchip Technology E, Axial 1.4A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 900V 1.4V @ 1.4A 900V 50ns -65°C ~ 150°C Military, MIL-PRF-19500/590
1N6631US/TR RECTIFIER UFR,FRR Microchip Technology SQ-MELF, A 1.4A Standard Surface Mount A-MELF Fast Recovery =< 500ns, > 200mA (Io) 4 µA @ 1.1 V 40pF @ 10V, 1MHz 1.4V @ 1.4A 1.1 V 60ns -65°C ~ 150°C
JAN1N6631/TR RECTIFIER UFR,FRR Microchip Technology E, Axial 1.4A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 1V 1.6V @ 1A 1.1 V 60ns -65°C ~ 175°C Military, MIL-PRF-19500/590
1N6631 DIODE GEN PURP 1.1KV 1.4A AXIAL Microchip Technology A, Axial 1.4A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 4µA @ 1100V 40pF @ 10V, 1MHz 1.4V @ 1.4A 1100V 60ns -65°C ~ 150°C
JANTXV1N6631/TR RECTIFIER UFR,FRR Microchip Technology E, Axial 1.4A Standard Through Hole E-PAK Fast Recovery =< 500ns, > 200mA (Io) 4 µA @ 1.1 V 40pF @ 10V, 1MHz 1.6V @ 1.4A 1.1 V 60ns -65°C ~ 150°C Military, MIL-PRF-19500/590
1N6630/TR RECTIFIER UFR,FRR Microchip Technology A, Axial 1.4A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 990V 40pF @ 10V, 1MHz 1.4V @ 1.4A 990V 50ns -65°C ~ 150°C
JANTX1N6631U DIODE GEN PURP 1KV 1.4A E-MELF Microchip Technology SQ-MELF, E 1.4A Standard Surface Mount D-5B Fast Recovery =< 500ns, > 200mA (Io) 4µA @ 1000V 1.4V @ 1.4A 1000V 60ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JANTXV1N6631US/TR RECTIFIER UFR,FRR Microchip Technology E-MELF 1.4A Standard Surface Mount D-5B Fast Recovery =< 500ns, > 200mA (Io) 4 µA @ 1.1 V 40pF @ 10V, 1MHz 1.6V @ 1.4A 1.1 V 60ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JANTX1N6630US DIODE GEN PURP 900V 1.4A E-MELF Microchip Technology SQ-MELF, E 1.4A Standard Surface Mount D-5B Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 900V 1.4V @ 1.4A 900V 50ns -65°C ~ 150°C Military, MIL-PRF-19500/590
1N6630 DIODE GEN PURP 990V 1.4A AXIAL Microchip Technology A, Axial 1.4A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 990V 40pF @ 10V, 1MHz 1.4V @ 1.4A 990V 50ns -65°C ~ 150°C
JAN1N6631 DIODE GEN PURP 1.1KV 1.4A AXIAL Microchip Technology E, Axial 1.4A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 1000V 1.6V @ 1A 1100V 60ns -65°C ~ 175°C Military, MIL-PRF-19500/590
JAN1N6630/TR RECTIFIER UFR,FRR Microchip Technology E, Axial 1.4A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 900V 1.4V @ 1.4A 900V 50ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JAN1N6631US/TR RECTIFIER UFR,FRR Microchip Technology E-MELF 1.4A Standard Surface Mount D-5B Fast Recovery =< 500ns, > 200mA (Io) 4 µA @ 1.1 V 40pF @ 10V, 1MHz 1.6V @ 1.4A 1.1 V 60ns -65°C ~ 150°C Military, MIL-PRF-19500/590
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