IDH12SG60CXKSA1
|
DIODE SCHOTTKY 600V 12A TO220-2 |
Infineon Technologies |
TO-220-2 |
12A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-2 |
No Recovery Time > 500mA (Io) |
100µA @ 600V |
310pF @ 1V, 1MHz |
2.1V @ 12A |
600V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
IDH12G65C5XKSA2
|
DIODE SCHOTKY 650V 12A TO220-2-1 |
Infineon Technologies |
TO-220-2 |
12A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-1 |
No Recovery Time > 500mA (Io) |
190µA @ 650V |
360pF @ 1V, 1MHz |
1.7V @ 12A |
650V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
IDD12SG60CXTMA1
|
DIODE SCHOTTKY 600V 12A TO252-3 |
Infineon Technologies |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
12A (DC) |
Silicon Carbide Schottky |
Surface Mount |
PG-TO252-3 |
No Recovery Time > 500mA (Io) |
100µA @ 600V |
310pF @ 1V, 1MHz |
2.1V @ 12A |
600V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
IDH12G65C5XKSA1
|
DIODE SCHOTTKY 650V 12A TO220-2 |
Infineon Technologies |
TO-220-2 |
12A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2 |
No Recovery Time > 500mA (Io) |
190µA @ 650V |
360pF @ 1V, 1MHz |
1.7V @ 12A |
650V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
IDH12S60CAKSA1
|
DIODE SCHOTTKY 600V 12A TO220-2 |
Infineon Technologies |
TO-220-2 |
12A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-2 |
No Recovery Time > 500mA (Io) |
160µA @ 600V |
530pF @ 1V, 1MHz |
1.7V @ 12A |
600V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
IDD12SG60CXTMA2
|
DIODE SCHOTTKY 600V 12A TO252-3 |
Infineon Technologies |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
12A (DC) |
Silicon Carbide Schottky |
Surface Mount |
PG-TO252-3 |
No Recovery Time > 500mA (Io) |
100µA @ 600V |
310pF @ 1V, 1MHz |
2.1V @ 12A |
600V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
SDT12S60
|
DIODE SCHOTTKY 600V 12A TO220-2 |
Infineon Technologies |
TO-220-2 |
12A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-2 |
No Recovery Time > 500mA (Io) |
400µA @ 600V |
450pF @ 1V, 1MHz |
1.7V @ 12A |
600V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
IDH12SG60CXKSA2
|
DIODE SCHOTTKY 600V 12A TO220-2 |
Infineon Technologies |
TO-220-2 |
12A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-1 |
No Recovery Time > 500mA (Io) |
100µA @ 600V |
310pF @ 1V, 1MHz |
2.1V @ 12A |
600V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
IDW12G65C5
|
IDW12G65 - COOLSIC SCHOTTKY DIOD |
Infineon Technologies |
TO-247-3 |
12A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO247-3-41 |
No Recovery Time > 500mA (Io) |
500µA @ 650V |
360pF @ 1V, 1MHz |
1.7V @ 12A |
650V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
IDW12G65C5XKSA1
|
DIODE SCHOTTKY 650V 12A TO247-3 |
Infineon Technologies |
TO-247-3 |
12A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO247-3 |
No Recovery Time > 500mA (Io) |
190µA @ 650V |
360pF @ 1V, 1MHz |
1.7V @ 12A |
650V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
IDK12G65C5XTMA1
|
DIODE SCHOTTKY 650V 12A TO263-2 |
Infineon Technologies |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
12A (DC) |
Silicon Carbide Schottky |
Surface Mount |
PG-TO263-2 |
No Recovery Time > 500mA (Io) |
2.1mA @ 650V |
360pF @ 1V, 1MHz |
1.8V @ 12A |
650V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
AIDW12S65C5XKSA1
|
DIODE SCHOTTKY 650V 12A TO247 |
Infineon Technologies |
TO-247-3 |
12A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO247-3-41 |
No Recovery Time > 500mA (Io) |
70µA @ 650V |
363pF @ 1V, 1MHz |
1.7V @ 12A |
650V |
0ns |
-40°C ~ 175°C |
Automotive, AEC-Q100/101, CoolSiC™ |
IDW12G65C5FKSA1
|
DIODE SCHOTTKY 650V 12A TO247-3 |
Infineon Technologies |
TO-247-3 |
12A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO247-3-41 |
No Recovery Time > 500mA (Io) |
500µA @ 650V |
360pF @ 1V, 1MHz |
1.7V @ 12A |
650V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
IDH04G65C6XKSA1
|
DIODE SCHOTTKY 650V 12A TO220-2 |
Infineon Technologies |
TO-220-2 |
12A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2 |
No Recovery Time > 500mA (Io) |
14µA @ 420V |
205pF @ 1V, 1MHz |
1.35V @ 4A |
650V |
0ns |
-55°C ~ 175°C |
|
IDL12G65C5XUMA1
|
DIODE SCHOTTKY 650V 12A VSON-4 |
Infineon Technologies |
4-PowerTSFN |
12A (DC) |
Silicon Carbide Schottky |
Surface Mount |
PG-VSON-4 |
No Recovery Time > 500mA (Io) |
190µA @ 650V |
360pF @ 1V, 1MHz |
1.7V @ 12A |
650V |
0ns |
-55°C ~ 150°C |
CoolSiC™+ |