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  • Средний выпрямленный ток (Io)
Найдено: 184
Наименование Описание Производитель
Package / Case
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Емкость @ Vr, F
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Время обратного восстановления (trr)
Рабочая температура перехода
Конфигурация диода
Средний выпрямленный ток (Io) на диод
G4S06510QT SIC SCHOTTKY DIODE 650V 10A DFN8 Global Power Technology-GPT 4-PowerTSFN 44.9A (DC) Silicon Carbide Schottky Surface Mount 4-DFN (8x8) No Recovery Time > 500mA (Io) 50µA @ 650V 550pF @ 0V, 1MHz 1.7V @ 10A 650V 0ns -55°C ~ 175°C
G5S12010D SIC SCHOTTKY DIODE 1200V 10A 2-P Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 30.9A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 1200V 825pF @ 0V, 1MHz 1.7V @ 10A 1200V 0ns -55°C ~ 175°C
G5S06502AT SIC SCHOTTKY DIODE 650V 2A 2-PIN Global Power Technology-GPT TO-220-2 9.6A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 124pF @ 0V, 1MHz 1.5V @ 2A 650V 0ns -55°C ~ 175°C
G5S12002A SIC SCHOTTKY DIODE 1200V 2A 2-PI Global Power Technology-GPT TO-220-2 10A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 1200V 170pF @ 0V, 1MHz 1.7V @ 2A 1200V 0ns -55°C ~ 175°C
G5S12020H SIC SCHOTTKY DIODE 1200V 20A 2-P Global Power Technology-GPT TO-220-2 Full Pack 24.6A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 1200V 1320pF @ 0V, 1MHz 1.7V @ 20A 1200V 0ns -55°C ~ 175°C
G3S06506H SIC SCHOTTKY DIODE 650V 6A 2-PIN Global Power Technology-GPT TO-220-2 Full Pack 15.4A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 650V 424pF @ 0V, 1MHz 1.7V @ 6A 650V 0ns -55°C ~ 175°C
GAS06520D SIC SCHOTTKY DIODE 650V 20A 2-PI Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 79.5A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 1390pF @ 0V, 1MHz 1.7V @ 20A 650V 0ns -55°C ~ 175°C
G3S06506D SIC SCHOTTKY DIODE 650V 6A 2-PIN Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 22.5A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 424pF @ 0V, 1MHz 1.7V @ 6A 650V 0ns -55°C ~ 175°C
G4S06506AT SIC SCHOTTKY DIODE 650V 6A 2-PIN Global Power Technology-GPT TO-220-2 11.6A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.8V @ 6A 650V 0ns -55°C ~ 175°C
G5S12005A SIC SCHOTTKY DIODE 1200V 5A 2-PI Global Power Technology-GPT TO-220-2 20.5A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 1200V 424pF @ 0V, 1MHz 1.7V @ 5A 1200V 0ns -55°C ~ 175°C
G3S12003A SIC SCHOTTKY DIODE 1200V 3A 2-PI Global Power Technology-GPT TO-220-2 12A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 100µA @ 1200V 260pF @ 0V, 1MHz 1.7V @ 3A 1200V 0ns -55°C ~ 175°C
G5S12040BM SIC SCHOTTKY DIODE 1200V 40A 3-P Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 1200V 1.7V @ 20A 1200V 0ns -55°C ~ 175°C 1 Pair Common Cathode 62A (DC)
G3S06510C SIC SCHOTTKY DIODE 650V 10A 2-PI Global Power Technology-GPT TO-252-3, DPak (2 Leads + Tab), SC-63 34A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 650V 690pF @ 0V, 1MHz 1.7V @ 10A 650V 0ns -55°C ~ 175°C
G4S06510DT SIC SCHOTTKY DIODE 650V 10A 2-PI Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 32A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 550pF @ 0V, 1MHz 1.7V @ 10A 650V 0ns -55°C ~ 175°C
G3S06503A SIC SCHOTTKY DIODE 650V 3A 2-PIN Global Power Technology-GPT TO-220-2 11.5A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.7V @ 3A 650V 0ns -55°C ~ 175°C