|
G52YT
|
SIC SCHOTTKY DIODE 650V 2A SMA |
Global Power Technology-GPT |
DO-214AC, SMA |
5.8A (DC) |
Silicon Carbide Schottky |
Surface Mount |
SMA |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
116.75pF @ 0V, 1MHz |
1.7V @ 2A |
650V |
0ns |
-55°C ~ 175°C |
|
|
|
G3S12015H
|
SIC SCHOTTKY DIODE 1200V 15A 2-P |
Global Power Technology-GPT |
TO-220-2 Full Pack |
21A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220F |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
1700pF @ 0V, 1MHz |
1.7V @ 15A |
1200V |
0ns |
-55°C ~ 175°C |
|
|
|
G5S12040PP
|
SIC SCHOTTKY DIODE 1200V 40A 2-P |
Global Power Technology-GPT |
TO-247-2 |
|
Silicon Carbide Schottky |
Through Hole |
TO-247AC |
No Recovery Time > 500mA (Io) |
100µA @ 1200V |
|
1.7V @ 40A |
1200V |
0ns |
-55°C ~ 175°C |
1 Pair Common Anode |
115A (DC) |
|
G4S06508QT
|
SIC SCHOTTKY DIODE 650V 8A DFN8* |
Global Power Technology-GPT |
4-PowerTSFN |
34A (DC) |
Silicon Carbide Schottky |
Surface Mount |
4-DFN (8x8) |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
395pF @ 0V, 1MHz |
1.7V @ 8A |
650V |
0ns |
-55°C ~ 175°C |
|
|
|
G3S06508A
|
SIC SCHOTTKY DIODE 650V 8A 2-PIN |
Global Power Technology-GPT |
TO-220-2 |
25.5A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
550pF @ 0V, 1MHz |
1.7V @ 8A |
650V |
0ns |
-55°C ~ 175°C |
|
|
|
G3S06510B
|
SIC SCHOTTKY DIODE 650V 10A 3-PI |
Global Power Technology-GPT |
TO-247-3 |
|
Silicon Carbide Schottky |
Through Hole |
TO-247AB |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
|
1.7V @ 5A |
650V |
0ns |
-55°C ~ 175°C |
1 Pair Common Cathode |
27A (DC) |
|
G3S06512B
|
SIC SCHOTTKY DIODE 650V 12A 3-PI |
Global Power Technology-GPT |
TO-247-3 |
|
Silicon Carbide Schottky |
Through Hole |
TO-247AB |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
|
1.7V @ 6A |
650V |
0ns |
-55°C ~ 175°C |
1 Pair Common Cathode |
27A (DC) |
|
G4S06508JT
|
SIC SCHOTTKY DIODE 650V 8A 2-PIN |
Global Power Technology-GPT |
TO-220-2 Isolated Tab |
23.5A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220ISO |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
395pF @ 0V, 1MHz |
1.7V @ 8A |
650V |
0ns |
-55°C ~ 175°C |
|
|
|
G5S06510HT
|
SIC SCHOTTKY DIODE 650V 10A 2-PI |
Global Power Technology-GPT |
TO-220-2 Full Pack |
23.8A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220F |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
|
|
650V |
0ns |
-55°C ~ 175°C |
|
|
|
G4S06516BT
|
SIC SCHOTTKY DIODE 650V 16A 3-PI |
Global Power Technology-GPT |
TO-247-3 |
|
Silicon Carbide Schottky |
Through Hole |
TO-247AB |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
|
1.7V @ 8A |
650V |
0ns |
-55°C ~ 175°C |
1 Pair Common Cathode |
25.9A (DC) |
|
G3S06516B
|
SIC SCHOTTKY DIODE 650V 16A 3-PI |
Global Power Technology-GPT |
TO-247-3 |
|
Silicon Carbide Schottky |
Through Hole |
TO-247AB |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
|
1.7V @ 8A |
650V |
0ns |
-55°C ~ 175°C |
1 Pair Common Cathode |
25.5A (DC) |
|
G5S06508PT
|
SIC SCHOTTKY DIODE 650V 8A 2-PIN |
Global Power Technology-GPT |
TO-247-2 |
31.2A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-247AC |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
550pF @ 0V, 1MHz |
1.5V @ 8A |
650V |
0ns |
-55°C ~ 175°C |
|
|
|
G5S06508DT
|
SIC SCHOTTKY DIODE 650V 8A 2-PIN |
Global Power Technology-GPT |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
32A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-263 |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
550pF @ 0V, 1MHz |
1.5V @ 8A |
650V |
0ns |
-55°C ~ 175°C |
|
|
|
G3S06502D
|
SIC SCHOTTKY DIODE 650V 2A 2-PIN |
Global Power Technology-GPT |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
9A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-263 |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
123pF @ 0V, 1MHz |
1.7V @ 2A |
650V |
0ns |
-55°C ~ 175°C |
|
|
|
G5S12020BM
|
SIC SCHOTTKY DIODE 1200V 20A 3-P |
Global Power Technology-GPT |
TO-247-3 |
|
Silicon Carbide Schottky |
Through Hole |
TO-247AB |
No Recovery Time > 500mA (Io) |
30µA @ 1200V |
|
1.7V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
1 Pair Common Cathode |
33A (DC) |