• Средний выпрямленный ток (Io)
  • Производитель
Найдено: 219
Наименование Описание Производитель
Package / Case
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Емкость @ Vr, F
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Время обратного восстановления (trr)
Рабочая температура перехода
Серия
CDBJFSC10650-G DIODE, SIC STKY 10A 650V TO-220F Comchip Technology TO-220-2 Full Pack 10A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 100µA @ 650V 710pF @ 0V, 1MHz 1.7V @ 10A 650V 0ns -55°C ~ 175°C
C4D02120E DIODE SCHOTTKY 1.2KV 2A TO252-2 Cree/Wolfspeed TO-252-3, DPak (2 Leads + Tab), SC-63 10A (DC) Silicon Carbide Schottky Surface Mount TO-252-2 No Recovery Time > 500mA (Io) 50µA @ 1200V 167pF @ 0V, 1MHz 1.8V @ 2A 1200V 0ns -55°C ~ 175°C Z-Rec®
G5S12002A SIC SCHOTTKY DIODE 1200V 2A 2-PI Global Power Technology-GPT TO-220-2 10A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 1200V 170pF @ 0V, 1MHz 1.7V @ 2A 1200V 0ns -55°C ~ 175°C
IDH10G65C5XKSA2 DIODE SCHOTKY 650V 10A TO220-2-1 Infineon Technologies TO-220-2 10A (DC) Silicon Carbide Schottky Through Hole PG-TO220-2-1 No Recovery Time > 500mA (Io) 180µA @ 650V 300pF @ 1V, 1MHz 1.7V @ 10A 650V 0ns -55°C ~ 175°C CoolSiC™+
IDK10G65C5XTMA2 DIODE SCHOTTKY 650V 10A TO263-2 Infineon Technologies TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 10A (DC) Silicon Carbide Schottky Surface Mount PG-TO263-2 No Recovery Time > 500mA (Io) 300pF @ 1V, 1MHz 1.8V @ 10A 650V 0ns -55°C ~ 175°C CoolSiC™+
SICB1060P-TP SIC SCHOTTKY BARRIER , 10A ,650V Micro Commercial Co TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 10A (DC) Silicon Carbide Schottky Surface Mount D2PAK No Recovery Time > 500mA (Io) 44 µA @ 650 V 36pF @ 400V, 1MHz 1.6V @ 10A 650V 0ns -55°C ~ 175°C
IDK10G65C5XTMA1 RECTIFIER DIODE Rochester Electronics, LLC TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 10A (DC) Silicon Carbide Schottky Surface Mount PG-TO263-2 No Recovery Time > 500mA (Io) 1.7mA @ 650V 300pF @ 1V, 1MHz 1.8V @ 10A 650V 0ns -55°C ~ 175°C CoolSiC™+
SCS310AMC SHORTER RECOVERY TIME, ENABLING Rohm Semiconductor TO-220-2 Full Pack 10A (DC) Silicon Carbide Schottky Through Hole TO-220FM No Recovery Time > 500mA (Io) 50µA @ 650V 500pF @ 1V, 1MHz 1.5V @ 10A 650V 0ns 175°C (Max)
S10KCH DIODE GEN PURP 800V 10A DO214AB Taiwan Semiconductor Corporation DO-214AB, SMC 10A (DC) Standard Surface Mount DO-214AB (SMC) Standard Recovery >500ns, > 200mA (Io) 1µA @ 800V 60pF @ 4V, 1MHz 1.1V @ 10A 800V -55°C ~ 150°C Automotive, AEC-Q101
SFA1003GH DIODE GEN PURP 150V 10A TO220AC Taiwan Semiconductor Corporation TO-220-2 10A (DC) Standard Through Hole TO-220AC Fast Recovery =< 500ns, > 200mA (Io) 10µA @ 150V 70pF @ 4V, 1MHz 975mV @ 10A 150V 35ns -55°C ~ 150°C Automotive, AEC-Q101
MBR10150H DIODE SCHOTTKY 10A 150V TO220AB Taiwan Semiconductor Corporation TO-220-2 10A (DC) Schottky Through Hole TO-220AC Fast Recovery =< 500ns, > 200mA (Io) 100µA @ 150V 1.05V @ 10A 150V -55°C ~ 150°C Automotive, AEC-Q101
MBRF10200 DIODE SCHOTTKY 10A 200V ITO220AC Taiwan Semiconductor Corporation TO-220-2 Full Pack 10A (DC) Schottky Through Hole ITO-220AC Fast Recovery =< 500ns, > 200mA (Io) 100µA @ 200V 1.05V @ 10A 200V -55°C ~ 150°C
S10GC M6 DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation DO-214AB, SMC 10A (DC) Standard Surface Mount DO-214AB (SMC) Standard Recovery >500ns, > 200mA (Io) 1µA @ 400V 60pF @ 4V, 1MHz 1.1V @ 10A 400V -55°C ~ 150°C
CLS03(TE16R,Q) DIODE SCHOTTKY 60V 10A L-FLAT Toshiba Semiconductor and Storage L-FLAT™ 10A (DC) Schottky Surface Mount L-FLAT™ (4x5.5) Fast Recovery =< 500ns, > 200mA (Io) 1mA @ 60V 345pF @ 10V, 1MHz 0.58V @ 10A 60V -40°C ~ 125°C
C4D02120E-TR DIODE SCHOTTKY 1.2KV 9A TO252-2 Wolfspeed, Inc. TO-252-3, DPak (2 Leads + Tab), SC-63 10A (DC) Silicon Carbide Schottky Surface Mount TO-252-2 No Recovery Time > 500mA (Io) 50µA @ 1200V 167pF @ 0V, 1MHz 1.8V @ 2A 1200V 0ns -55°C ~ 175°C Z-Rec®